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Spinnaker Semiconductor, Inc.
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Eagan, MN, US
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Patents Grants
last 30 patents
Information
Patent Grant
Field effect transistor having source and/or drain forming Schottky...
Patent number
7,294,898
Issue date
Nov 13, 2007
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Schottky-barrier mosfet manufacturing method using isotropic etch p...
Patent number
7,291,524
Issue date
Nov 6, 2007
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Short-channel Schottky-barrier MOSFET device and manufacturing method
Patent number
7,221,019
Issue date
May 22, 2007
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Short-channel Schottky-barrier MOSFET device and manufacturing method
Patent number
7,052,945
Issue date
May 30, 2006
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Schottky barrier CMOS fabrication method
Patent number
6,974,737
Issue date
Dec 13, 2005
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Transistor having high dielectric constant gate insulating layer an...
Patent number
6,949,787
Issue date
Sep 27, 2005
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Field effect transistor having source and/or drain forming Schottky...
Patent number
6,784,035
Issue date
Aug 31, 2004
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Short-channel schottky-barrier MOSFET device and manufacturing method
Patent number
6,744,103
Issue date
Jun 1, 2004
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Short-channel schottky-barrier MOSFET device
Patent number
6,495,882
Issue date
Dec 17, 2002
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing a short-channel FET with Schottky-barrier s...
Patent number
6,303,479
Issue date
Oct 16, 2001
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
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Patents Applications
last 30 patents
Information
Patent Application
POWER TRANSISTOR WITH METAL SOURCE AND METHOD OF MANUFACTURE
Publication number
20100059819
Publication date
Mar 11, 2010
SPINNAKER SEMICONDUCTOR, INC.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Field effect transistor having source and/or drain forming Schottky...
Publication number
20080079107
Publication date
Apr 3, 2008
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
CMOS device with zero soft error rate
Publication number
20070080406
Publication date
Apr 12, 2007
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Dynamic Schottky barrier MOSFET device and method of manufacture
Publication number
20070026590
Publication date
Feb 1, 2007
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Transistor having high dielectric constant gate insulating layer an...
Publication number
20070007605
Publication date
Jan 11, 2007
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
Short-channel schottky-barrier MOSFET device and manufacturing method
Publication number
20060244052
Publication date
Nov 2, 2006
Spinnaker Semiconductor, Inc.
John P. Snyder
H01 - BASIC ELECTRIC ELEMENTS