Aaron A. Budrevich

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Source or drain structures with vertical trenches
- Patent number 11,935,887
- Issue date Mar 19, 2024
- Intel Corporation
- Ryan Keech
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structures with source or drain dopant diffusion...
- Patent number 11,735,630
- Issue date Aug 22, 2023
- Intel Corporation
- Cory Bomberger
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of doping fin structures of non-planar transistor devices
- Patent number 11,264,453
- Issue date Mar 1, 2022
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of doping fin structures of non-planar transistor devices
- Patent number 11,222,947
- Issue date Jan 11, 2022
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for doping a sub-fin region of a semiconductor fin structur...
- Patent number 10,896,852
- Issue date Jan 19, 2021
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Retrograde transistor doping by heterojunction materials
- Patent number 10,896,907
- Issue date Jan 19, 2021
- Intel Corporation
- Patrick H. Keys
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 10,847,653
- Issue date Nov 24, 2020
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 10,008,565
- Issue date Jun 26, 2018
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,691,848
- Issue date Jun 27, 2017
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 9,583,487
- Issue date Feb 28, 2017
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,490,329
- Issue date Nov 8, 2016
- Intel Corporation
- Willy Rachmady
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 9,159,787
- Issue date Oct 13, 2015
- Intel Corporation
- Willy Rachmady
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Grant
Semiconductor devices with germanium-rich active layers and doped t...
- Patent number 8,748,940
- Issue date Jun 10, 2014
- Intel Corporation
- Willy Rachmady
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Reliability of high-K gate dielectric layers
- Patent number 8,394,694
- Issue date Mar 12, 2013
- Intel Corporation
- Adrien R. Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group II element alloys for protecting metal interconnects
- Patent number 8,258,627
- Issue date Sep 4, 2012
- Intel Corporation
- Aaron A. Budrevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Noble metal barrier layers
- Patent number 8,222,746
- Issue date Jul 17, 2012
- Intel Corporation
- Adrien R. Lavoie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Boundaries with elevated deuterium levels
- Patent number 7,842,983
- Issue date Nov 30, 2010
- Intel Corporation
- Ashutosh Ashutosh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant confinement in the delta doped layer using a dopant segregra...
- Patent number 7,790,536
- Issue date Sep 7, 2010
- Intel Corporation
- Mantu K. Hudait
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group II element alloys for protecting metal interconnects
- Patent number 7,759,241
- Issue date Jul 20, 2010
- Intel Corporation
- Aaron A. Budrevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dopant confinement in the delta doped layer using a dopant segregat...
- Patent number 7,601,980
- Issue date Oct 13, 2009
- Intel Corporation
- Mantu K. Hudait
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH VERTICAL TRENCHES
- Publication number 20240170484
- Publication date May 23, 2024
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...
- Publication number 20230420574
- Publication date Dec 28, 2023
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS
- Publication number 20230420246
- Publication date Dec 28, 2023
- Intel Corporation
- Ilya V. Karpov
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION...
- Publication number 20230343826
- Publication date Oct 26, 2023
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE OR DRAIN STRUCTURES WITH VERTICAL TRENCHES
- Publication number 20200312842
- Publication date Oct 1, 2020
- Intel Corporation
- Ryan KEECH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION...
- Publication number 20200219975
- Publication date Jul 9, 2020
- Intel Corporation
- Cory BOMBERGER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR DOPING A SUB-FIN REGION OF A SEMICONDUCTOR FIN STRUCTUR...
- Publication number 20200211901
- Publication date Jul 2, 2020
- Intel Corporation
- Scott B. CLENDENNING
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF DOPING FIN STRUCTURES OF NON-PLANAR TRANSISTOR DEVICES
- Publication number 20190267448
- Publication date Aug 29, 2019
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RETROGRADE TRANSISTOR DOPING BY HETEROJUNCTION MATERIALS
- Publication number 20190237466
- Publication date Aug 1, 2019
- Intel Corporation
- Patrick H. KEYS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF DOPING FIN STRUCTURES OF NON-PLANAR TRANSISTOR DEVICES
- Publication number 20180254320
- Publication date Sep 6, 2018
- Intel Corporation
- Cory E. Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20170288019
- Publication date Oct 5, 2017
- Intel Corporation
- Willy RACHMADY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS
- Publication number 20170125591
- Publication date May 4, 2017
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20170047401
- Publication date Feb 16, 2017
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor devices with germanium-rich active layers & doped tra...
- Publication number 20160049476
- Publication date Feb 18, 2016
- Intel Corporation
- Willy Rachmady
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...
- Publication number 20140291772
- Publication date Oct 2, 2014
- Willy RACHMADY
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS & DOPED TRA...
- Publication number 20140167108
- Publication date Jun 19, 2014
- Willy RACHMADY
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS
- Publication number 20140035059
- Publication date Feb 6, 2014
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reliability of high-K gate dielectric layers
- Publication number 20120286372
- Publication date Nov 15, 2012
- Adrien R. Lavoie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP II ELEMENT ALLOYS FOR PROTECTING METAL INTERCONNECTS
- Publication number 20100252929
- Publication date Oct 7, 2010
- Aaron A. Budrevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III-V devices with delta-doped layer under channel region
- Publication number 20100148153
- Publication date Jun 17, 2010
- Mantu K. Hudait
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Boundaries with elevated deuterium levels
- Publication number 20090321855
- Publication date Dec 31, 2009
- Ashutosh Ashutosh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPANT CONFINEMENT IN THE DELTA DOPED LAYER USING A DOPANT SEGREGRA...
- Publication number 20090298266
- Publication date Dec 3, 2009
- Mantu K. Hudait
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Dopant confinement in the delta doped layer using a dopant segregat...
- Publication number 20080157058
- Publication date Jul 3, 2008
- Mantu K. Hudait
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group II element alloys for protecting metal interconnects
- Publication number 20080070396
- Publication date Mar 20, 2008
- Aaron A. Budrevich
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Noble metal precursors for copper barrier and seed layer
- Publication number 20070207611
- Publication date Sep 6, 2007
- Adrien R. Lavoie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Noble metal barrier layers
- Publication number 20070205510
- Publication date Sep 6, 2007
- Adrien R. Lavoie
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Insulation layer for silicon-on-insulator wafer
- Publication number 20070063279
- Publication date Mar 22, 2007
- Peter G. Tolchinsky
- H01 - BASIC ELECTRIC ELEMENTS

Aaron A. Budrevich

Person

Patents Grantslast 30 patents

Source or drain structures with vertical trenches

Integrated circuit structures with source or drain dopant diffusion...

Methods of doping fin structures of non-planar transistor devices

Methods of doping fin structures of non-planar transistor devices

Methods for doping a sub-fin region of a semiconductor fin structur...

Retrograde transistor doping by heterojunction materials

Semiconductor device having metallic source and drain regions

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor device having metallic source and drain regions

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor devices with germanium-rich active layers and doped t...

Semiconductor devices with germanium-rich active layers and doped t...

Reliability of high-K gate dielectric layers

Group II element alloys for protecting metal interconnects

Noble metal barrier layers

Boundaries with elevated deuterium levels

Dopant confinement in the delta doped layer using a dopant segregra...

Group II element alloys for protecting metal interconnects

Dopant confinement in the delta doped layer using a dopant segregat...

Patents Applicationslast 30 patents

SOURCE OR DRAIN STRUCTURES WITH VERTICAL TRENCHES

MOBILITY IMPROVEMENT IN GATE ALL AROUND TRANSISTORS BASED ON SUBSTR...

SPUTTER TARGETS AND SOURCES FOR SELF-DOPED SOURCE AND DRAIN CONTACTS

INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION...

SOURCE OR DRAIN STRUCTURES WITH VERTICAL TRENCHES

INTEGRATED CIRCUIT STRUCTURES WITH SOURCE OR DRAIN DOPANT DIFFUSION...

METHODS FOR DOPING A SUB-FIN REGION OF A SEMICONDUCTOR FIN STRUCTUR...

METHODS OF DOPING FIN STRUCTURES OF NON-PLANAR TRANSISTOR DEVICES

RETROGRADE TRANSISTOR DOPING BY HETEROJUNCTION MATERIALS

METHODS OF DOPING FIN STRUCTURES OF NON-PLANAR TRANSISTOR DEVICES

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

Semiconductor devices with germanium-rich active layers & doped tra...

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS AND DOPED T...

SEMICONDUCTOR DEVICES WITH GERMANIUM-RICH ACTIVE LAYERS & DOPED TRA...

SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS

Reliability of high-K gate dielectric layers

GROUP II ELEMENT ALLOYS FOR PROTECTING METAL INTERCONNECTS

Group III-V devices with delta-doped layer under channel region

Boundaries with elevated deuterium levels

DOPANT CONFINEMENT IN THE DELTA DOPED LAYER USING A DOPANT SEGREGRA...

Dopant confinement in the delta doped layer using a dopant segregat...

Group II element alloys for protecting metal interconnects

Noble metal precursors for copper barrier and seed layer

Noble metal barrier layers

Insulation layer for silicon-on-insulator wafer