Abdalla Naem

Person

Sunnyvale, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of forming a copper topped interconnect structure that has t...
- Patent number 8,324,097
- Issue date Dec 4, 2012
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Growth of group III nitride-based structures and integration with c...
- Patent number 8,318,563
- Issue date Nov 27, 2012
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a copper-compatible fuse target
- Patent number 8,273,608
- Issue date Sep 25, 2012
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper-compatible fuse target
- Patent number 8,030,733
- Issue date Oct 4, 2011
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fuse target and method of forming the fuse target in a copper proce...
- Patent number 7,964,934
- Issue date Jun 21, 2011
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stacked die structure with an underlying copper-topped die
- Patent number 7,847,385
- Issue date Dec 7, 2010
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Copper-topped interconnect structure that has thin and thick copper...
- Patent number 7,709,956
- Issue date May 4, 2010
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual side fabricated semiconductor wafer
- Patent number 6,010,951
- Issue date Jan 4, 2000
- National Semiconductor Corporation
- Sagar Pushpala
- B28 - WORKING CEMENT, CLAY, OR STONE
Information Patent Grant
Metal salicide process employing ion metal plasma deposition
- Patent number 5,966,607
- Issue date Oct 12, 1999
- National Semicoinductor Corporation
- Lay Chee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of simultaneous formation of salicide and local interconnect...
- Patent number 5,911,114
- Issue date Jun 8, 1999
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a contact structure for an MOS transistor ent...
- Patent number 5,866,459
- Issue date Feb 2, 1999
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned POCL.sub.3 process flow for submicron microelectronics...
- Patent number 5,843,834
- Issue date Dec 1, 1998
- National Semiconductor Corporation
- Abdalla A. Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
POCl.sub.3 process flow for doping polysilicon without forming oxid...
- Patent number 5,824,596
- Issue date Oct 20, 1998
- National Semiconductor Corporation
- Abdalla A. Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a contact structure for a raised source/drain...
- Patent number 5,807,759
- Issue date Sep 15, 1998
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned MOSFET gate/source/drain salicide formation
- Patent number 5,780,349
- Issue date Jul 14, 1998
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating a raised source/drain MOSFET using self-align...
- Patent number 5,736,419
- Issue date Apr 7, 1998
- National Semiconductor Corporation
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Growth of group III nitride- based structures and integration with...
- Publication number 20110284859
- Publication date Nov 24, 2011
- National Semiconductor Corporation
- Sandeep R. Bahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Copper Topped Interconnect Structure that has T...
- Publication number 20100190332
- Publication date Jul 29, 2010
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COPPER-TOPPED INTERCONNECT STRUCTURE THAT HAS THIN AND THICK COPPER...
- Publication number 20100065964
- Publication date Mar 18, 2010
- Abdalla Aly Naem
- H01 - BASIC ELECTRIC ELEMENTS

Abdalla Naem

Person

Patents Grantslast 30 patents

Method of forming a copper topped interconnect structure that has t...

Growth of group III nitride-based structures and integration with c...

Method of forming a copper-compatible fuse target

Copper-compatible fuse target

Fuse target and method of forming the fuse target in a copper proce...

Stacked die structure with an underlying copper-topped die

Copper-topped interconnect structure that has thin and thick copper...

Dual side fabricated semiconductor wafer

Metal salicide process employing ion metal plasma deposition

Method of simultaneous formation of salicide and local interconnect...

Method of fabricating a contact structure for an MOS transistor ent...

Self-aligned POCL.sub.3 process flow for submicron microelectronics...

POCl.sub.3 process flow for doping polysilicon without forming oxid...

Method of fabricating a contact structure for a raised source/drain...

Self-aligned MOSFET gate/source/drain salicide formation

Method of fabricating a raised source/drain MOSFET using self-align...

Patents Applicationslast 30 patents

Growth of group III nitride- based structures and integration with...

Method of Forming a Copper Topped Interconnect Structure that has T...

COPPER-TOPPED INTERCONNECT STRUCTURE THAT HAS THIN AND THICK COPPER...