Adam Amali

Person

Chandler, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device
- Patent number 11,296,218
- Issue date Apr 5, 2022
- Infineon Technologies Austria AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an edge termination area with trench el...
- Patent number 10,868,173
- Issue date Dec 15, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a reduced surface doping in an edge ter...
- Patent number 10,727,331
- Issue date Jul 28, 2020
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Combined gate and source trench formation and related structure
- Patent number 10,141,415
- Issue date Nov 27, 2018
- Infineon Technologies Americas Corp.
- Adam Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a semiconductor structure having integrated snubb...
- Patent number 9,966,464
- Issue date May 8, 2018
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having integrated snubber resistance
- Patent number 9,627,328
- Issue date Apr 18, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with source trench and termination trenc...
- Patent number 9,620,583
- Issue date Apr 11, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with interconnected gate trenches
- Patent number 7,943,990
- Issue date May 17, 2011
- International Rectifier Corporation
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET with integrated drivers in a common package
- Patent number RE41719
- Issue date Sep 21, 2010
- International Rectifier Corporation
- Daniel Kinzer
- 257 - Active solid-state devices
Information Patent Grant
Early contact, high cell density process
- Patent number 7,566,622
- Issue date Jul 28, 2009
- International Rectifier Corporation
- Adam I Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench MOSFET technology for DC-DC converter applications
- Patent number 7,557,395
- Issue date Jul 7, 2009
- International Rectifier Corporation
- Ling Ma
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Trench fet with self aligned source and contact
- Patent number 7,397,083
- Issue date Jul 8, 2008
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench FET with self aligned source and contact
- Patent number 7,301,200
- Issue date Nov 27, 2007
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench fet with self aligned source and contact
- Patent number 7,045,859
- Issue date May 16, 2006
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device with a trench termi...
- Patent number 6,921,699
- Issue date Jul 26, 2005
- International Rectifier Corporation
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power mosfet with integrated drivers in a common package
- Patent number 6,593,622
- Issue date Jul 15, 2003
- International Rectifier Corporation
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...
- Publication number 20240047517
- Publication date Feb 8, 2024
- Infineon Technologies Austria AG
- Robert Haase
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device
- Publication number 20200365724
- Publication date Nov 19, 2020
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING AN EDGE TERMINATION AREA WITH TRENCH EL...
- Publication number 20200328303
- Publication date Oct 15, 2020
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Having a Reduced Surface Doping in an Edge Ter...
- Publication number 20190006513
- Publication date Jan 3, 2019
- Infineon Technologies Austria AG
- Cedric Ouvrard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Combined Gate and Source Trench Formation and Related Structure
- Publication number 20170200799
- Publication date Jul 13, 2017
- Infineon Technologies Americas Corp.
- Adam Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Semiconductor Structure Having Integrated Snubb...
- Publication number 20170186861
- Publication date Jun 29, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Structure Having Integrated Snubber Resistance and Re...
- Publication number 20160104773
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Source Trench and Termination Trenc...
- Publication number 20160104766
- Publication date Apr 14, 2016
- INTERNATIONAL RECTIFIER CORPORATION
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench fet with self aligned source and contact
- Publication number 20080061365
- Publication date Mar 13, 2008
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor device with interconnected gate trenches
- Publication number 20070040215
- Publication date Feb 22, 2007
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Early contact, high cell density process
- Publication number 20070018241
- Publication date Jan 25, 2007
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench fet with self aligned source and contact
- Publication number 20060157782
- Publication date Jul 20, 2006
- International Rectifier Corporation
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench MOSFET technology for DC-DC converter applications
- Publication number 20040251491
- Publication date Dec 16, 2004
- Ling Ma
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Semiconductor device processing
- Publication number 20040137684
- Publication date Jul 15, 2004
- Ling Ma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench fet with self aligned source and contact
- Publication number 20030085422
- Publication date May 8, 2003
- International Rectifier Corp.
- Adam I. Amali
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power mosfet with integrated drivers in a common package
- Publication number 20020163040
- Publication date Nov 7, 2002
- International Rectifier Corp.
- Daniel M. Kinzer
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Semiconductor device

Semiconductor device having an edge termination area with trench el...

Semiconductor device having a reduced surface doping in an edge ter...

Combined gate and source trench formation and related structure

Method of forming a semiconductor structure having integrated snubb...

Semiconductor structure having integrated snubber resistance

Power semiconductor device with source trench and termination trenc...

Power semiconductor device with interconnected gate trenches

Power MOSFET with integrated drivers in a common package

Early contact, high cell density process

Trench MOSFET technology for DC-DC converter applications

Trench fet with self aligned source and contact

Trench FET with self aligned source and contact

Trench fet with self aligned source and contact

Method for manufacturing a semiconductor device with a trench termi...

Power mosfet with integrated drivers in a common package

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE HAVING COUNTER-DOPED REGIONS IN BOTH AN...

Semiconductor Device

SEMICONDUCTOR DEVICE HAVING AN EDGE TERMINATION AREA WITH TRENCH EL...

Semiconductor Device Having a Reduced Surface Doping in an Edge Ter...

Combined Gate and Source Trench Formation and Related Structure

Method of Forming a Semiconductor Structure Having Integrated Snubb...

Semiconductor Structure Having Integrated Snubber Resistance and Re...

Power Semiconductor Device with Source Trench and Termination Trenc...

Trench fet with self aligned source and contact

Power semiconductor device with interconnected gate trenches

Early contact, high cell density process

Trench fet with self aligned source and contact

Trench MOSFET technology for DC-DC converter applications

Semiconductor device processing

Trench fet with self aligned source and contact

Power mosfet with integrated drivers in a common package