Adam William Saxler

Person

Durham, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Microelectronic devices including slot structures, and related memo...
- Patent number 12,027,460
- Issue date Jul 2, 2024
- Micron Technology, Inc.
- Adam W. Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated assemblies having rugged material fill, and methods of f...
- Patent number 11,805,645
- Issue date Oct 31, 2023
- Micron Technology, Inc.
- Nicholas R. Tapias
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices including vertical memory cells and related methods
- Patent number 11,758,716
- Issue date Sep 12, 2023
- Micron Technology, Inc.
- Adam W. Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device with multi-layer liner structure
- Patent number 11,538,988
- Issue date Dec 27, 2022
- Intel Corporation
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electronic devices comprising metal oxide materials and related met...
- Patent number 11,444,243
- Issue date Sep 13, 2022
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low dislocation density group III nitride layers on silicon carbide...
- Patent number 9,331,192
- Issue date May 3, 2016
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including implanted regions and protective la...
- Patent number 9,318,594
- Issue date Apr 19, 2016
- Cree, Inc.
- Scott T. Sheppard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating thick semi-insulating or insulating epitaxia...
- Patent number 9,224,596
- Issue date Dec 29, 2015
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of passivating surfaces of wide bandgap semiconductor devices
- Patent number 9,166,033
- Issue date Oct 20, 2015
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wide bandgap device having a buffer layer disposed over a diamond s...
- Patent number 9,142,617
- Issue date Sep 22, 2015
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick nitride semiconductor structures with interlayer structures a...
- Patent number 9,054,017
- Issue date Jun 9, 2015
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating seminconductor devices including self aligned...
- Patent number 9,040,398
- Issue date May 26, 2015
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Heterojunction transistors having barrier layer bandgaps greater th...
- Patent number 9,035,354
- Issue date May 19, 2015
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Quantum wells for light conversion
- Patent number 9,018,619
- Issue date Apr 28, 2015
- Cree, Inc.
- Adam W. Saxler
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Nitride-based transistors having laterally grown active region and...
- Patent number 8,946,777
- Issue date Feb 3, 2015
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Rare earth doped layer or substrate for light conversion
- Patent number 8,829,546
- Issue date Sep 9, 2014
- Cree, Inc.
- Steven P. DenBaars
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride field effect transistors (FETS) capable of withst...
- Patent number 8,803,198
- Issue date Aug 12, 2014
- Cree, Inc.
- Richard Peter Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas driven rotation apparatus and method for forming crystalline la...
- Patent number 8,628,622
- Issue date Jan 14, 2014
- Cree, Inc.
- Adam William Saxler
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
LED with substrate modifications for enhanced light extraction and...
- Patent number 8,617,909
- Issue date Dec 31, 2013
- Cree, Inc.
- Max Batres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures with modulated doping and related m...
- Patent number 8,604,461
- Issue date Dec 10, 2013
- Cree, Inc.
- Daniel Carleton Driscoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Devices having thick semi-insulating epitaxial gallium nitride layer
- Patent number 8,575,651
- Issue date Nov 5, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device structures with modulated and delta doping and...
- Patent number 8,536,615
- Issue date Sep 17, 2013
- Cree, Inc.
- Daniel Carleton Driscoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer precursor prepared for group III nitride epitaxial growth on...
- Patent number 8,513,672
- Issue date Aug 20, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated nitride and silicon carbide-based devices
- Patent number 8,502,235
- Issue date Aug 6, 2013
- Cree, Inc.
- Scott T. Sheppard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Group III nitride semiconductor devices with silicon nitride layers...
- Patent number 8,481,376
- Issue date Jul 9, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thick nitride semiconductor structures with interlayer structures
- Patent number 8,362,503
- Issue date Jan 29, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating nitride semiconductor structures with interl...
- Patent number 8,324,005
- Issue date Dec 4, 2012
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride field effect transistors (FETS) capable of withst...
- Patent number 8,212,289
- Issue date Jul 3, 2012
- Cree, Inc.
- Richard Peter Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of fabricating strain balanced nitride heterojunction trans...
- Patent number 8,153,515
- Issue date Apr 10, 2012
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LED with substrate modifications for enhanced light extraction and...
- Patent number 8,034,647
- Issue date Oct 11, 2011
- Cree, Inc.
- Max Batres
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
MEMORY DEVICES INCLUDING SLOT STRUCTURES
- Publication number 20240321745
- Publication date Sep 26, 2024
- Micron Technology, Inc.
- Adam W. Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240206175
- Publication date Jun 20, 2024
- Micron Technology, Inc.
- Sidhartha Gupta
Information Patent Application
Memory Circuitry And Method Used In Forming Memory Circuitry
- Publication number 20240098993
- Publication date Mar 21, 2024
- Micron Technology, Inc.
- Andrew Li
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20230386575
- Publication date Nov 30, 2023
- Micron Technology, Inc.
- Haoyu Li
- G11 - INFORMATION STORAGE
Information Patent Application
Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...
- Publication number 20230345723
- Publication date Oct 26, 2023
- Micron Technology, Inc.
- Yiping Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MICROELECTRONIC DEVICES INCLUDING SLOT STRUCTURES, AND RELATED MEMO...
- Publication number 20230057754
- Publication date Feb 23, 2023
- Micron Technology, Inc.
- Adam W. Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS
- Publication number 20220376176
- Publication date Nov 24, 2022
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED MET...
- Publication number 20210126193
- Publication date Apr 29, 2021
- Micron Technology, Inc.
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Assemblies Having Rugged Material Fill, and Methods of F...
- Publication number 20210050364
- Publication date Feb 18, 2021
- Micro Technology, Inc.
- Nicholas R. Tapias
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE WITH MULTI-LAYER LINER STRUCTURE
- Publication number 20200287129
- Publication date Sep 10, 2020
- Intel Corporation
- Santanu Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ELECTRONIC DEVICES INCLUDING VERTICAL MEMORY CELLS AND RELATED METHODS
- Publication number 20200075617
- Publication date Mar 5, 2020
- Micron Technology, Inc.
- Adam W. Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Thick Semi-Insulating or Insulating Epitaxia...
- Publication number 20130344687
- Publication date Dec 26, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER PRECURSOR PREPARED FOR GROUP III NITRIDE EPITAXIAL GROWTH ON...
- Publication number 20130306990
- Publication date Nov 21, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTO...
- Publication number 20130270514
- Publication date Oct 17, 2013
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THICK NITRIDE SEMICONDUCTOR STRUCTURES WITH INTERLAYER STRUCTURES A...
- Publication number 20130221327
- Publication date Aug 29, 2013
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Field Effect Transistors (FETS) Capable of Withst...
- Publication number 20120235159
- Publication date Sep 20, 2012
- Richard Peter Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Nitride Semiconductor Structures with Interl...
- Publication number 20110312159
- Publication date Dec 22, 2011
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR WITH CONTOURED STRUCTURE
- Publication number 20110233521
- Publication date Sep 29, 2011
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Structures with Modulated Doping and Related M...
- Publication number 20110140083
- Publication date Jun 16, 2011
- Daniel Carleton Driscoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Semiconductor Devices with Silicon Nitride Layers...
- Publication number 20110136305
- Publication date Jun 9, 2011
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated Nitride and Silicon Carbide-Based Devices
- Publication number 20110114968
- Publication date May 19, 2011
- Scott T. Sheppard
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SILICON CARBIDE ON DIAMOND SUBSTRATES AND RELATED DEVICES AND METHODS
- Publication number 20110064105
- Publication date Mar 17, 2011
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LED WITH SUBSTRATE MODIFICATIONS FOR ENHANCED LIGHT EXTRACTION AND...
- Publication number 20100273280
- Publication date Oct 28, 2010
- Cree, Inc.
- Max Batres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Heterojunction Transistors Having Barrier Layer Bandgaps Greater Th...
- Publication number 20100187570
- Publication date Jul 29, 2010
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III nitride semiconductor devices with silicon nitride layers...
- Publication number 20100068855
- Publication date Mar 18, 2010
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitride-Based Transistors Having Laterally Grown Active Region and...
- Publication number 20100012952
- Publication date Jan 21, 2010
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide on Diamond Substrates and Related Devices and Methods
- Publication number 20090272984
- Publication date Nov 5, 2009
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Led with substrate modifications for enhanced light extraction and...
- Publication number 20090233394
- Publication date Sep 17, 2009
- Cree, Inc.
- Max Batres
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Group III Nitride Field Effect Transistors (FETS) Capable of Withst...
- Publication number 20090101939
- Publication date Apr 23, 2009
- Cree, Inc.
- Richard Peter Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Fabricating Transistors Having Buried N-Type and P-Type...
- Publication number 20090042345
- Publication date Feb 12, 2009
- Cree, Inc.
- Adam William Saxler
- H01 - BASIC ELECTRIC ELEMENTS

Adam William Saxler

Person

Patents Grantslast 30 patents

Microelectronic devices including slot structures, and related memo...

Integrated assemblies having rugged material fill, and methods of f...

Electronic devices including vertical memory cells and related methods

Memory device with multi-layer liner structure

Electronic devices comprising metal oxide materials and related met...

Low dislocation density group III nitride layers on silicon carbide...

Semiconductor devices including implanted regions and protective la...

Methods of fabricating thick semi-insulating or insulating epitaxia...

Methods of passivating surfaces of wide bandgap semiconductor devices

Wide bandgap device having a buffer layer disposed over a diamond s...

Thick nitride semiconductor structures with interlayer structures a...

Method of fabricating seminconductor devices including self aligned...

Heterojunction transistors having barrier layer bandgaps greater th...

Quantum wells for light conversion

Nitride-based transistors having laterally grown active region and...

Rare earth doped layer or substrate for light conversion

Group III nitride field effect transistors (FETS) capable of withst...

Gas driven rotation apparatus and method for forming crystalline la...

LED with substrate modifications for enhanced light extraction and...

Semiconductor device structures with modulated doping and related m...

Devices having thick semi-insulating epitaxial gallium nitride layer

Semiconductor device structures with modulated and delta doping and...

Wafer precursor prepared for group III nitride epitaxial growth on...

Integrated nitride and silicon carbide-based devices

Group III nitride semiconductor devices with silicon nitride layers...

Thick nitride semiconductor structures with interlayer structures

Methods of fabricating nitride semiconductor structures with interl...

Group III nitride field effect transistors (FETS) capable of withst...

Methods of fabricating strain balanced nitride heterojunction trans...

LED with substrate modifications for enhanced light extraction and...

Patents Applicationslast 30 patents

MEMORY DEVICES INCLUDING SLOT STRUCTURES

Memory Circuitry And Method Used In Forming Memory Circuitry

Memory Circuitry And Method Used In Forming Memory Circuitry

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

Memory Arrays Comprising Strings Of Memory Cells And Methods Used I...

MICROELECTRONIC DEVICES INCLUDING SLOT STRUCTURES, AND RELATED MEMO...

METHODS OF FORMING ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS

ELECTRONIC DEVICES COMPRISING METAL OXIDE MATERIALS AND RELATED MET...

Integrated Assemblies Having Rugged Material Fill, and Methods of F...

MEMORY DEVICE WITH MULTI-LAYER LINER STRUCTURE

ELECTRONIC DEVICES INCLUDING VERTICAL MEMORY CELLS AND RELATED METHODS

Methods of Fabricating Thick Semi-Insulating or Insulating Epitaxia...

WAFER PRECURSOR PREPARED FOR GROUP III NITRIDE EPITAXIAL GROWTH ON...

LOW RESISTANCE BIDIRECTIONAL JUNCTIONS IN WIDE BANDGAP SEMICONDUCTO...

THICK NITRIDE SEMICONDUCTOR STRUCTURES WITH INTERLAYER STRUCTURES A...

Group III Nitride Field Effect Transistors (FETS) Capable of Withst...

Methods of Fabricating Nitride Semiconductor Structures with Interl...

SEMICONDUCTOR WITH CONTOURED STRUCTURE

Semiconductor Device Structures with Modulated Doping and Related M...

Group III Nitride Semiconductor Devices with Silicon Nitride Layers...

Integrated Nitride and Silicon Carbide-Based Devices

SILICON CARBIDE ON DIAMOND SUBSTRATES AND RELATED DEVICES AND METHODS

LED WITH SUBSTRATE MODIFICATIONS FOR ENHANCED LIGHT EXTRACTION AND...

Heterojunction Transistors Having Barrier Layer Bandgaps Greater Th...

Group III nitride semiconductor devices with silicon nitride layers...

Nitride-Based Transistors Having Laterally Grown Active Region and...

Silicon Carbide on Diamond Substrates and Related Devices and Methods

Led with substrate modifications for enhanced light extraction and...

Group III Nitride Field Effect Transistors (FETS) Capable of Withst...

Methods of Fabricating Transistors Having Buried N-Type and P-Type...