Aelan Mosden

Person

Poughkeepsie, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral etching of silicon
- Patent number 12,002,683
- Issue date Jun 4, 2024
- Tokyo Electron Limited
- Hamed Hajibabaeinajafabadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching techniques
- Patent number 11,837,467
- Issue date Dec 5, 2023
- Toyko Electron Limited
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of metals
- Patent number 11,715,643
- Issue date Aug 1, 2023
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching techniques
- Patent number 11,538,690
- Issue date Dec 27, 2022
- Tokyo Electron Limited
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of Si-containing...
- Patent number 11,538,691
- Issue date Dec 27, 2022
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching techniques
- Patent number 11,482,423
- Issue date Oct 25, 2022
- Tokyo Electron Limited
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Plasma etching techniques
- Patent number 11,424,120
- Issue date Aug 23, 2022
- Tokyo Electron Limited
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etching system and method
- Patent number 11,380,554
- Issue date Jul 5, 2022
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-plasma etch of titanium-containing material layers with tunable...
- Patent number 11,322,350
- Issue date May 3, 2022
- Tokyo Electron Limited
- Daisuke Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Atomic layer etch (ALE) of tungsten or other metal layers
- Patent number 11,189,499
- Issue date Nov 30, 2021
- Tokyo Electron Limited
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of Si-containing...
- Patent number 10,971,372
- Issue date Apr 6, 2021
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etch with controllable etch selectivity of silicon-german...
- Patent number 10,923,356
- Issue date Feb 16, 2021
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Process integration techniques using a carbon layer to form self-al...
- Patent number 10,600,687
- Issue date Mar 24, 2020
- Tokyo Electron Limited
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gas phase etching system and method
- Patent number 10,580,660
- Issue date Mar 3, 2020
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating NFET and PFET nanowire devices
- Patent number 10,573,564
- Issue date Feb 25, 2020
- Tokyo Electron Limited
- Aelan Mosden
- B82 - NANO-TECHNOLOGY
Information Patent Grant
System and method of determining process completion of post heat tr...
- Patent number 10,290,553
- Issue date May 14, 2019
- Tokyo Electron Limited
- Jacob Theisen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isotropic silicon and silicon-germanium etching with tunable select...
- Patent number 9,984,890
- Issue date May 29, 2018
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for selective spacer etch for multi-patterning sc...
- Patent number 9,748,110
- Issue date Aug 29, 2017
- Tokyo Electron Limited
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-layer pattern for alternate ALD processes
- Patent number 8,809,169
- Issue date Aug 19, 2014
- Tokyo Electron Limited
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multilayer sidewall spacer for seam protection of a patterned struc...
- Patent number 8,673,725
- Issue date Mar 18, 2014
- Tokyo Electron Limited
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual sidewall spacer for seam protection of a patterned structure
- Patent number 8,664,102
- Issue date Mar 4, 2014
- Tokyo Electron Limited
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
System and method of removing chamber residues from a plasma proces...
- Patent number 7,959,970
- Issue date Jun 14, 2011
- Tokyo Electron Limited
- Marcel Gaudet
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method and system for treating a hard mask to improve etch characte...
- Patent number 7,291,446
- Issue date Nov 6, 2007
- Tokyo Electron Limited
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of etching high aspect ratio features
- Patent number 7,226,868
- Issue date Jun 5, 2007
- Tokyo Electron Limited
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Processing system and method for chemically treating a TERA layer
- Patent number 7,097,779
- Issue date Aug 29, 2006
- Tokyo Electron Limited
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SELECTIVE GAS PHASE ETCH OF SILICON GERMANIUM ALLOYS
- Publication number 20240128088
- Publication date Apr 18, 2024
- TOKYO ELECTRON LIMITED
- Toshiki KANAKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH
- Publication number 20240096639
- Publication date Mar 21, 2024
- TOKYO ELECTRON LIMITED
- Jonathan HOLLIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OXYGEN-FREE ETCHING OF NON-VOLATILE METALS
- Publication number 20230420267
- Publication date Dec 28, 2023
- TOKYO ELECTRON LIMITED
- Stephanie Oyola-Reynoso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE AND ISOTROPIC ETCH OF SILICON OVER SILICON-GERMANIUM ALLO...
- Publication number 20230360921
- Publication date Nov 9, 2023
- TOKYO ELECTRON LIMITED
- Matthew FLAUGH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Lateral Etching of Silicon
- Publication number 20230317465
- Publication date Oct 5, 2023
- TOKYO ELECTRON LIMITED
- Hamed Hajibabaeinajafabadi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Plasma Etching Techniques
- Publication number 20220351970
- Publication date Nov 3, 2022
- TOKYO ELECTRON LIMITED
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING TECHNIQUES
- Publication number 20220254645
- Publication date Aug 11, 2022
- TOKYO ELECTRON LIMITED
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING TECHNIQUES
- Publication number 20220238344
- Publication date Jul 28, 2022
- TOKYO ELECTRON LIMITED
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PLASMA ETCHING TECHNIQUES
- Publication number 20220238309
- Publication date Jul 28, 2022
- TOKYO ELECTRON LIMITED
- Pingshan Luan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...
- Publication number 20210217628
- Publication date Jul 15, 2021
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NON-PLASMA ETCH OF TITANIUM-CONTAINING MATERIAL LAYERS WITH TUNABLE...
- Publication number 20210057213
- Publication date Feb 25, 2021
- TOKYO ELECTRON LIMITED
- Daisuke Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF METALS
- Publication number 20210020454
- Publication date Jan 21, 2021
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS
- Publication number 20200312673
- Publication date Oct 1, 2020
- TOKYO ELECTRON LIMITED
- Yu-Hao Tsai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCHING SYSTEM AND METHOD
- Publication number 20200176266
- Publication date Jun 4, 2020
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF SILICON-GERMAN...
- Publication number 20200027741
- Publication date Jan 23, 2020
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FABRICATING NFET AND PFET NANOWIRE DEVICES
- Publication number 20180315665
- Publication date Nov 1, 2018
- TOKYO ELECTRON LIMITED
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Process Integration Techniques Using A Carbon Layer To Form Self-Al...
- Publication number 20180308753
- Publication date Oct 25, 2018
- TOKYO ELECTRON LIMITED
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOTROPIC SILICON AND SILICON-GERMANIUM ETCHING WITH TUNABLE SELECT...
- Publication number 20170271165
- Publication date Sep 21, 2017
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEM AND METHOD OF DETERMINING PROCESS COMPLETION OF POST HEAT TR...
- Publication number 20170221781
- Publication date Aug 3, 2017
- TOKYO ELECTRON LIMITED
- Jacob Theisen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH OF AMORPHOUS AND POLY-CRYSTALLINE SILICON FROM HIGH...
- Publication number 20170207103
- Publication date Jul 20, 2017
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR SELECTIVE SPACER ETCH FOR MULTI-PATTERNING SC...
- Publication number 20170069510
- Publication date Mar 9, 2017
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCHING SYSTEM AND METHOD
- Publication number 20160379835
- Publication date Dec 29, 2016
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...
- Publication number 20160379842
- Publication date Dec 29, 2016
- TOKYO ELECTRON LIMITED
- Subhadeep Kal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-LAYER PATTERN FOR ALTERNATE ALD PROCESSES
- Publication number 20130084688
- Publication date Apr 4, 2013
- TOKYO ELECTRON LIMITED
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE
- Publication number 20110241085
- Publication date Oct 6, 2011
- TOKYO ELECTRON LIMITED
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUC...
- Publication number 20110241128
- Publication date Oct 6, 2011
- TOKYO ELECTRON LIMITED
- David L. O'Meara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Batch processing system and method for performing chemical oxide re...
- Publication number 20070238301
- Publication date Oct 11, 2007
- Stephen H. Cabral
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processing system and method for chemically treating a tera layer
- Publication number 20060254716
- Publication date Nov 16, 2006
- TOKYO ELECTRON LIMITED
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Processing system and method for chemically treating a tera layer
- Publication number 20060006136
- Publication date Jan 12, 2006
- TOKYO ELECTRON LIMITED
- Aelan Mosden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
System and method of removing chamber residues from a plasma proces...
- Publication number 20050224458
- Publication date Oct 13, 2005
- TOKYO ELECTRON LIMITED
- Marcel Gaudet
- B08 - CLEANING

Aelan Mosden

Person

Patents Grantslast 30 patents

Lateral etching of silicon

Plasma etching techniques

Gas phase etch with controllable etch selectivity of metals

Plasma etching techniques

Gas phase etch with controllable etch selectivity of Si-containing...

Plasma etching techniques

Plasma etching techniques

Gas phase etching system and method

Non-plasma etch of titanium-containing material layers with tunable...

Atomic layer etch (ALE) of tungsten or other metal layers

Gas phase etch with controllable etch selectivity of Si-containing...

Gas phase etch with controllable etch selectivity of silicon-german...

Process integration techniques using a carbon layer to form self-al...

Gas phase etching system and method

Method for fabricating NFET and PFET nanowire devices

System and method of determining process completion of post heat tr...

Isotropic silicon and silicon-germanium etching with tunable select...

Method and system for selective spacer etch for multi-patterning sc...

Multi-layer pattern for alternate ALD processes

Multilayer sidewall spacer for seam protection of a patterned struc...

Dual sidewall spacer for seam protection of a patterned structure

System and method of removing chamber residues from a plasma proces...

Method and system for treating a hard mask to improve etch characte...

Method of etching high aspect ratio features

Processing system and method for chemically treating a TERA layer

Patents Applicationslast 30 patents

SELECTIVE GAS PHASE ETCH OF SILICON GERMANIUM ALLOYS

SURFACE MODIFICATION TO ACHIEVE SELECTIVE ISOTROPIC ETCH

OXYGEN-FREE ETCHING OF NON-VOLATILE METALS

SELECTIVE AND ISOTROPIC ETCH OF SILICON OVER SILICON-GERMANIUM ALLO...

Lateral Etching of Silicon

Plasma Etching Techniques

PLASMA ETCHING TECHNIQUES

PLASMA ETCHING TECHNIQUES

PLASMA ETCHING TECHNIQUES

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...

NON-PLASMA ETCH OF TITANIUM-CONTAINING MATERIAL LAYERS WITH TUNABLE...

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF METALS

ATOMIC LAYER ETCH (ALE) OF TUNGSTEN OR OTHER METAL LAYERS

GAS PHASE ETCHING SYSTEM AND METHOD

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF SILICON-GERMAN...

METHOD FOR FABRICATING NFET AND PFET NANOWIRE DEVICES

Process Integration Techniques Using A Carbon Layer To Form Self-Al...

ISOTROPIC SILICON AND SILICON-GERMANIUM ETCHING WITH TUNABLE SELECT...

SYSTEM AND METHOD OF DETERMINING PROCESS COMPLETION OF POST HEAT TR...

GAS PHASE ETCH OF AMORPHOUS AND POLY-CRYSTALLINE SILICON FROM HIGH...

METHOD AND SYSTEM FOR SELECTIVE SPACER ETCH FOR MULTI-PATTERNING SC...

GAS PHASE ETCHING SYSTEM AND METHOD

GAS PHASE ETCH WITH CONTROLLABLE ETCH SELECTIVITY OF Si-CONTAINING...

MULTI-LAYER PATTERN FOR ALTERNATE ALD PROCESSES

DUAL SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUCTURE

MULTILAYER SIDEWALL SPACER FOR SEAM PROTECTION OF A PATTERNED STRUC...

Batch processing system and method for performing chemical oxide re...

Processing system and method for chemically treating a tera layer

Processing system and method for chemically treating a tera layer

System and method of removing chamber residues from a plasma proces...