Ajay Sharma

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Beaverton, OR, US

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Patents Grantslast 30 patents

Information Patent Grant
Methods of channel stress engineering and structures formed thereby
- Patent number 8,716,806
- Issue date May 6, 2014
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an etch stop layer including a metal compound tha...
- Patent number 8,399,317
- Issue date Mar 19, 2013
- Intel Corporation
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of channel stress engineering and structures formed thereby
- Patent number 8,193,049
- Issue date Jun 5, 2012
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having an etch stop layer including a metal compound tha...
- Patent number 8,120,114
- Issue date Feb 21, 2012
- Intel Corporation
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective deposition of a dielectric on a self-assembled monolayer-...
- Patent number 7,790,631
- Issue date Sep 7, 2010
- Intel Corporation
- Ajay K. Sharma
- B05 - SPRAYING OR ATOMISING IN GENERAL APPLYING LIQUIDS OR OTHER FLUENT MATER...
Information Patent Grant
Enhanced nitride layers for metal oxide semiconductors
- Patent number 7,314,836
- Issue date Jan 1, 2008
- Intel Corporation
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF CHANNEL STRESS ENGINEERING AND STRUCTURES FORMED THEREBY
- Publication number 20120211839
- Publication date Aug 23, 2012
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING AN ETCH STOP LAYER INCLUDING A METAL COMPOUND THA...
- Publication number 20120034773
- Publication date Feb 9, 2012
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of channel stress engineering and structures formed thereby
- Publication number 20100148270
- Publication date Jun 17, 2010
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO DEPOSIT SILICON FILM ON A SUBSTRATE
- Publication number 20080237660
- Publication date Oct 2, 2008
- Ajay K. Sharma
- C30 - CRYSTAL GROWTH
Information Patent Application
Transistor having an etch stop layer including a metal compound tha...
- Publication number 20080157365
- Publication date Jul 3, 2008
- Andrew Ott
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective deposition of a dielectric on a self-assembled monolayer-...
- Publication number 20080116481
- Publication date May 22, 2008
- Ajay K. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Enhanced nitride layers for metal oxide semiconductors
- Publication number 20060003597
- Publication date Jan 5, 2006
- Oleg Golonzka
- H01 - BASIC ELECTRIC ELEMENTS