Akihiro Hachigo

Person

Itami, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 11,094,537
- Issue date Aug 17, 2021
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 10,600,676
- Issue date Mar 24, 2020
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- B32 - LAYERED PRODUCTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 10,186,451
- Issue date Jan 22, 2019
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,917,004
- Issue date Mar 13, 2018
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,312,340
- Issue date Apr 12, 2016
- Sumitomo Electric Industries, Ltd
- Makoto Kiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,312,165
- Issue date Apr 12, 2016
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Composite substrate
- Patent number 9,252,207
- Issue date Feb 2, 2016
- Sumitomo Electric Industries, Ltd.
- Yoko Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Group III nitride composite substrate and method for manufacturing...
- Patent number 9,136,337
- Issue date Sep 15, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 8,884,306
- Issue date Nov 11, 2014
- Sumitomo Electric Industries, Ltd.
- Takashi Kyono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing composite substrate
- Patent number 8,664,085
- Issue date Mar 4, 2014
- Sumitomo Electric Industries, Ltd.
- Yoko Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitride semiconductor epitaxial layer and method...
- Patent number 8,349,078
- Issue date Jan 8, 2013
- Sumitomo Electric Industries, Ltd.
- Hiromu Shiomi
- C30 - CRYSTAL GROWTH
Information Patent Grant
GaN substrate, epitaxial layer-provided substrate, methods of manuf...
- Patent number 8,283,694
- Issue date Oct 9, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride substrate
- Patent number 8,183,668
- Issue date May 22, 2012
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Damage evaluation method of compound semiconductor member, producti...
- Patent number 8,177,911
- Issue date May 15, 2012
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Grant
Substrate having thin film of GaN joined thereon and method of fabr...
- Patent number 8,143,140
- Issue date Mar 27, 2012
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing group III nitride semiconductor layer bonde...
- Patent number 8,124,498
- Issue date Feb 28, 2012
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method of compound semiconductor member
- Patent number 8,115,927
- Issue date Feb 14, 2012
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Grant
Group III nitride substrate, epitaxial layer-provided substrate, me...
- Patent number 8,101,968
- Issue date Jan 24, 2012
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
III-V compound semiconductor substrate manufacturing method
- Patent number 7,960,284
- Issue date Jun 14, 2011
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- C30 - CRYSTAL GROWTH
Information Patent Grant
Group III nitride substrate, epitaxial layer-provided substrate, me...
- Patent number 7,901,960
- Issue date Mar 8, 2011
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Grant
Substrate having thin film of GaN joined thereon and method of fabr...
- Patent number 7,728,348
- Issue date Jun 1, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitride-based compound semiconductor, method of cleaning a compound...
- Patent number 7,569,493
- Issue date Aug 4, 2009
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gallium nitride substrate, and gallium-nitride-substrate testing an...
- Patent number 7,554,175
- Issue date Jun 30, 2009
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Saw device
- Patent number 6,984,918
- Issue date Jan 10, 2006
- Seiko Epson Corporation
- Akihiro Hachigo
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface acoustic wave element
- Patent number 6,713,941
- Issue date Mar 30, 2004
- Seiko Epson Corporation
- Katsuhiro Itakura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface acoustic wave device and substrate thereof
- Patent number 6,710,513
- Issue date Mar 23, 2004
- Seiko Epson Corporation
- Hideaki Nakahata
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface acoustic wave device utilizing a ZnO layer and a diamond layer
- Patent number 6,642,813
- Issue date Nov 4, 2003
- Sumitomo Electric Industries, Ltd.
- Katsuhiro Itakura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface acoustic wave device
- Patent number 6,469,416
- Issue date Oct 22, 2002
- Sumitomo Electric Industries, Ltd.
- Katsuhiro Itakura
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface-acoustic-wave device
- Patent number 6,337,531
- Issue date Jan 8, 2002
- Sumitomo Electric Industrial, Ltd.
- Hideaki Nakahata
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Grant
Surface acoustic wave device and diamond base material for the same
- Patent number 5,891,557
- Issue date Apr 6, 1999
- Sumitomo Electric Industries, Ltd.
- Shin-ichi Shikata
- H03 - BASIC ELECTRONIC CIRCUITRY

Patents Applicationslast 30 patents

Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20160190001
- Publication date Jun 30, 2016
- Sumitomo Electric Industries, Ltd.
- Akihiro HACHIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150349063
- Publication date Dec 3, 2015
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20150194442
- Publication date Jul 9, 2015
- Sumitomo Electric Industries, Ltd.
- Keiji Ishibashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20140225229
- Publication date Aug 14, 2014
- Sumitomo Electric Industries, Ltd.
- Akihiro HACHIGO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...
- Publication number 20140103353
- Publication date Apr 17, 2014
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Composite Substrate
- Publication number 20140103358
- Publication date Apr 17, 2014
- Sumitomo Electric Industries, Ltd.
- Yoko Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROTECTIVE-FILM-ATTACHED COMPOSITE SUBSTRATE AND METHOD OF MANUFACT...
- Publication number 20130168693
- Publication date Jul 4, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Composite Substrate
- Publication number 20130040437
- Publication date Feb 14, 2013
- Sumitomo Electric Industries, Ltd.
- Yoko Maeda
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE COMPOSITE SUBSTRATE
- Publication number 20130032928
- Publication date Feb 7, 2013
- Sumitomo Electric Industries, Ltd.
- Issei Satoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120205661
- Publication date Aug 16, 2012
- Sumitomo Electric Industries, Ltd.
- Takashi KYONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20120208355
- Publication date Aug 16, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Akihiro HACHIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20120104556
- Publication date May 3, 2012
- Sumitomo Electric Industries, Ltd.
- Makoto KIYAMA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTI...
- Publication number 20120100643
- Publication date Apr 26, 2012
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Application
GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...
- Publication number 20120094473
- Publication date Apr 19, 2012
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN Substrate and Method of Its Manufacture, Method of Manufacturin...
- Publication number 20110315997
- Publication date Dec 29, 2011
- Sumitomo Electric Industries. Ltd.
- Akihiro Hachigo
- C30 - CRYSTAL GROWTH
Information Patent Application
Light-Emitting Device Substrate
- Publication number 20110272734
- Publication date Nov 10, 2011
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD OF FORMING NITRIDE SEMICONDUCTOR EPITAXIAL LAYER AND METHOD...
- Publication number 20110223749
- Publication date Sep 15, 2011
- Sumitomo Electric Industries, Ltd.
- Hiromu SHIOMI
- C30 - CRYSTAL GROWTH
Information Patent Application
GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...
- Publication number 20110133207
- Publication date Jun 9, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUF...
- Publication number 20110133209
- Publication date Jun 9, 2011
- Sumitomo Electric Industries, Ltd.
- Keiji ISHIBASHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFA...
- Publication number 20110121311
- Publication date May 26, 2011
- Sumitomo Electric Industries, Ltd.
- Fumitaka SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GALLIUM NITRIDE SUBSTRATE
- Publication number 20110073871
- Publication date Mar 31, 2011
- Sumitomo Electric Industries, Ltd.
- Akihiro HACHIGO
- C30 - CRYSTAL GROWTH
Information Patent Application
NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR...
- Publication number 20110018105
- Publication date Jan 27, 2011
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABR...
- Publication number 20100210089
- Publication date Aug 19, 2010
- Sumitomo Electric Industries, Ltd.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...
- Publication number 20100187540
- Publication date Jul 29, 2010
- SUMITOMO ELECTRIC INDUSTRIES , LTD.
- Keiji Ishibashi
- C30 - CRYSTAL GROWTH
Information Patent Application
DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTI...
- Publication number 20100068834
- Publication date Mar 18, 2010
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- G01 - MEASURING TESTING
Information Patent Application
METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER BONDE...
- Publication number 20100035406
- Publication date Feb 11, 2010
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NITRIDE-BASED COMPOUND SEMICONDUCTOR, METHOD OF CLEANING A COMPOUND...
- Publication number 20090291567
- Publication date Nov 26, 2009
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Nitride Semiconductor Layer-Bonded Substrate and Semiconducto...
- Publication number 20080296584
- Publication date Dec 4, 2008
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-V Compound Semiconductor Substrate Manufacturing Method
- Publication number 20080176400
- Publication date Jul 24, 2008
- Sumitomo Electric Industries, Ltd.
- Akihiro Hachigo
- C30 - CRYSTAL GROWTH
Information Patent Application
Substrate having thin film of GaN joined thereon and method of fabr...
- Publication number 20080169483
- Publication date Jul 17, 2008
- SUMITOMO ELECTRIC INDUSTRIES, LTD.
- Hitoshi Kasai
- H01 - BASIC ELECTRIC ELEMENTS

Akihiro Hachigo

Person

Patents Grantslast 30 patents

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Group III nitride composite substrate and method for manufacturing...

Composite substrate

Group III nitride composite substrate and method for manufacturing...

Semiconductor device and method for manufacturing the same

Method of manufacturing composite substrate

Method of forming nitride semiconductor epitaxial layer and method...

GaN substrate, epitaxial layer-provided substrate, methods of manuf...

Gallium nitride substrate

Damage evaluation method of compound semiconductor member, producti...

Substrate having thin film of GaN joined thereon and method of fabr...

Method of manufacturing group III nitride semiconductor layer bonde...

Production method of compound semiconductor member

Group III nitride substrate, epitaxial layer-provided substrate, me...

III-V compound semiconductor substrate manufacturing method

Group III nitride substrate, epitaxial layer-provided substrate, me...

Substrate having thin film of GaN joined thereon and method of fabr...

Nitride-based compound semiconductor, method of cleaning a compound...

Gallium nitride substrate, and gallium-nitride-substrate testing an...

Saw device

Surface acoustic wave element

Surface acoustic wave device and substrate thereof

Surface acoustic wave device utilizing a ZnO layer and a diamond layer

Surface acoustic wave device

Surface-acoustic-wave device

Surface acoustic wave device and diamond base material for the same

Patents Applicationslast 30 patents

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

GROUP III NITRIDE COMPOSITE SUBSTRATE AND METHOD FOR MANUFACTURING...

Composite Substrate

PROTECTIVE-FILM-ATTACHED COMPOSITE SUBSTRATE AND METHOD OF MANUFACT...

Method of Manufacturing Composite Substrate

GROUP III NITRIDE COMPOSITE SUBSTRATE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

GALLIUM NITRIDE SUBSTRATE

POWER DEVICE AND METHOD FOR MANUFACTURING THE SAME

DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTI...

GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...

GaN Substrate and Method of Its Manufacture, Method of Manufacturin...

Light-Emitting Device Substrate

METHOD OF FORMING NITRIDE SEMICONDUCTOR EPITAXIAL LAYER AND METHOD...

GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...

GaN SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, METHODS OF MANUF...

METHOD FOR MANUFACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR MANUFA...

GALLIUM NITRIDE SUBSTRATE

NITRIDE-BASED COMPOUND SEMICONDUCTOR DEVICE, COMPOUND SEMICONDUCTOR...

SUBSTRATE HAVING THIN FILM OF GaN JOINED THEREON AND METHOD OF FABR...

GROUP III NITRIDE SUBSTRATE, EPITAXIAL LAYER-PROVIDED SUBSTRATE, ME...

DAMAGE EVALUATION METHOD OF COMPOUND SEMICONDUCTOR MEMBER, PRODUCTI...

METHOD OF MANUFACTURING GROUP III NITRIDE SEMICONDUCTOR LAYER BONDE...

NITRIDE-BASED COMPOUND SEMICONDUCTOR, METHOD OF CLEANING A COMPOUND...

III-V Nitride Semiconductor Layer-Bonded Substrate and Semiconducto...

III-V Compound Semiconductor Substrate Manufacturing Method

Substrate having thin film of GaN joined thereon and method of fabr...