Akinori Seki

Person

Nara, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Stack comprising single-crystal diamond substrate
- Patent number 11,522,055
- Issue date Dec 6, 2022
- National Institute of Advanced Industrial Science and Technology
- Shinya Ohmagari
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Production method of SiC crystal
- Patent number 9,903,047
- Issue date Feb 27, 2018
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for producing SiC single crystal substrate in which a Cr sur...
- Patent number 9,873,955
- Issue date Jan 23, 2018
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of production of sic single crystal
- Patent number 9,587,327
- Issue date Mar 7, 2017
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Grant
Gettering process for producing semiconductor device
- Patent number 9,508,802
- Issue date Nov 29, 2016
- Toyota Jidosha Kabushiki Kaisha
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Production method of n-type SiC single crystal, n-type SiC single c...
- Patent number 9,157,171
- Issue date Oct 13, 2015
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
Ohmic electrode and method of forming the same
- Patent number 8,716,121
- Issue date May 6, 2014
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and manufacturing method of semiconductor device
- Patent number 8,633,101
- Issue date Jan 21, 2014
- Toyota Jidosha Kabushiki Kaisha
- Masahiro Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing p-type SiC semiconductor single crystal and p-ty...
- Patent number 8,470,698
- Issue date Jun 25, 2013
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
P-type SiC semiconductor
- Patent number 8,399,888
- Issue date Mar 19, 2013
- Toyota Jidosha Kabushiki Kaisha
- Hiroaki Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of producing silicon carbide semiconductor substrate, silico...
- Patent number 8,338,833
- Issue date Dec 25, 2012
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide semiconductor device and method for manufacturing t...
- Patent number 8,053,784
- Issue date Nov 8, 2011
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming an OHMIC contact on a P-type 4H-SIC substrate
- Patent number 8,008,180
- Issue date Aug 30, 2011
- Toyota Jidosha Kabushiki Kaisha
- Yasuo Takahashi
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor devices and manufacturing method thereof
- Patent number 7,879,705
- Issue date Feb 1, 2011
- Toyota Jidosha Kabushiki Kaisha
- Akira Kawahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming epitaxial SiC using XPS characterization
- Patent number 7,678,671
- Issue date Mar 16, 2010
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Grant
MOSFET having Schottky gate and bipolar device
- Patent number 5,994,725
- Issue date Nov 30, 1999
- Toyota Jidosha Kabushiki Kaisha
- Toyokazu Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 5,773,334
- Issue date Jun 30, 1998
- Toyota Jidosha Kabushiki Kaisha
- Toyokazu Ohnishi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Layered semiconductor laser having solder laminations and method of...
- Patent number 5,604,761
- Issue date Feb 18, 1997
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser stack with lens and method of manufacturing the...
- Patent number 5,553,089
- Issue date Sep 3, 1996
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for growing a compound semiconductor and a method for produc...
- Patent number 5,491,106
- Issue date Feb 13, 1996
- Sharp Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser having stacked active layers with reduced drive...
- Patent number 5,452,316
- Issue date Sep 19, 1995
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser
- Patent number 5,365,536
- Issue date Nov 15, 1994
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device and a method of fabricating the same
- Patent number 5,111,470
- Issue date May 5, 1992
- Sharp Kabushiki Kaisha
- Hiroyuki Hosoba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device
- Patent number 5,070,510
- Issue date Dec 3, 1991
- Sharp Kabushiki Kaisha
- Fumihiro Konushi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor substrate with InGaP layer
- Patent number 5,016,065
- Issue date May 14, 1991
- Sharp Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laminated structure of compound semiconductors
- Patent number 5,011,550
- Issue date Apr 30, 1991
- Sharp Kabushiki Kaisha
- Fumihiro Konushi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STACK COMPRISING SINGLE-CRYSTAL DIAMOND SUBSTRATE
- Publication number 20210066078
- Publication date Mar 4, 2021
- NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY
- Shinya OHMAGARI
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
PRODUCTION METHOD OF SiC CRYSTAL
- Publication number 20160369424
- Publication date Dec 22, 2016
- Toyota Jidosha Kabushiki Kaisha
- Akinori SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
METHOD FOR PRODUCING SIC SINGLE CRYSTAL SUBSTRATE
- Publication number 20150259829
- Publication date Sep 17, 2015
- Toyota Jidosha Kabushiki Kaisha
- Akinori SEKI
- C30 - CRYSTAL GROWTH
Information Patent Application
PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE
- Publication number 20150064882
- Publication date Mar 5, 2015
- Katsunori Danno
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL
- Publication number 20130042802
- Publication date Feb 21, 2013
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE
- Publication number 20120217639
- Publication date Aug 30, 2012
- TOYOTA JIDOSHA KABUSHIKI KAIHSA
- Masahiro Sugimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OHMIC ELECTRODE AND METHOD OF FORMING THE SAME
- Publication number 20120132927
- Publication date May 31, 2012
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL
- Publication number 20120118221
- Publication date May 17, 2012
- Katsunori Danno
- C30 - CRYSTAL GROWTH
Information Patent Application
PRODUCTION METHOD OF N-TYPE SIC SINGLE CRYSTAL, N-TYPE SIC SINGLE C...
- Publication number 20110297893
- Publication date Dec 8, 2011
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Application
OHMIC ELECTRODE AND METHOD OF FORMING THE SAME
- Publication number 20110287626
- Publication date Nov 24, 2011
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-TYPE SiC SEMICONDUCTOR
- Publication number 20110210341
- Publication date Sep 1, 2011
- Hiroaki Saitoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR GROWING P-TYPE SIC SEMICONDUCTOR SINGLE CRYSTAL AND P-TY...
- Publication number 20100308344
- Publication date Dec 9, 2010
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Application
SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...
- Publication number 20100224884
- Publication date Sep 9, 2010
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING AN OHMIC CONTACT ON A P-TYPE 4H-SIC SUBSTRATE
- Publication number 20100102332
- Publication date Apr 29, 2010
- OSAKA UNIVERSITY
- Yasuo Takahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF
- Publication number 20090233435
- Publication date Sep 17, 2009
- Akira Kawahashi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor material, production method thereof and semiconductor...
- Publication number 20070096109
- Publication date May 3, 2007
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of producing silicon carbide semiconductor substrate, silico...
- Publication number 20070032053
- Publication date Feb 8, 2007
- Toyota Jidosha Kabushiki Kaisha
- Akinori Seki
- H01 - BASIC ELECTRIC ELEMENTS

Akinori Seki

Person

Patents Grantslast 30 patents

Stack comprising single-crystal diamond substrate

Production method of SiC crystal

Method for producing SiC single crystal substrate in which a Cr sur...

Method of production of sic single crystal

Gettering process for producing semiconductor device

Production method of n-type SiC single crystal, n-type SiC single c...

Ohmic electrode and method of forming the same

Semiconductor device and manufacturing method of semiconductor device

Method for growing p-type SiC semiconductor single crystal and p-ty...

P-type SiC semiconductor

Method of producing silicon carbide semiconductor substrate, silico...

Silicon carbide semiconductor device and method for manufacturing t...

Method of forming an OHMIC contact on a P-type 4H-SIC substrate

Semiconductor devices and manufacturing method thereof

Method of forming epitaxial SiC using XPS characterization

MOSFET having Schottky gate and bipolar device

Method of manufacturing a semiconductor device

Layered semiconductor laser having solder laminations and method of...

Semiconductor laser stack with lens and method of manufacturing the...

Method for growing a compound semiconductor and a method for produc...

Semiconductor laser having stacked active layers with reduced drive...

Semiconductor laser

Semiconductor laser device and a method of fabricating the same

Semiconductor laser device

Compound semiconductor substrate with InGaP layer

Laminated structure of compound semiconductors

Patents Applicationslast 30 patents

STACK COMPRISING SINGLE-CRYSTAL DIAMOND SUBSTRATE

PRODUCTION METHOD OF SiC CRYSTAL

METHOD FOR PRODUCING SIC SINGLE CRYSTAL SUBSTRATE

PROCESS FOR PRODUCING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE

METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE

OHMIC ELECTRODE AND METHOD OF FORMING THE SAME

METHOD OF PRODUCTION OF SIC SINGLE CRYSTAL

PRODUCTION METHOD OF N-TYPE SIC SINGLE CRYSTAL, N-TYPE SIC SINGLE C...

OHMIC ELECTRODE AND METHOD OF FORMING THE SAME

P-TYPE SiC SEMICONDUCTOR

METHOD FOR GROWING P-TYPE SIC SEMICONDUCTOR SINGLE CRYSTAL AND P-TY...

SILICON CARBIDE SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING T...

METHOD OF FORMING AN OHMIC CONTACT ON A P-TYPE 4H-SIC SUBSTRATE

SEMICONDUCTOR DEVICES AND MANUFACTURING METHOD THEREOF

Semiconductor material, production method thereof and semiconductor...

Method of producing silicon carbide semiconductor substrate, silico...