Akira Hiroki

Person

Izumi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
MOS type semiconductor device having an impurity diffusion layer
- Patent number 6,355,963
- Issue date Mar 12, 2002
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary semiconductor device and method for producing the same
- Patent number 6,031,268
- Issue date Feb 29, 2000
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS type semiconductor device having an impurity diffusion layer wi...
- Patent number 6,031,272
- Issue date Feb 29, 2000
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming complementary MOS device having asymmetric regio...
- Patent number 5,830,788
- Issue date Nov 3, 1998
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MIS transistor with gate sidewall insulating layer
- Patent number 5,808,347
- Issue date Sep 15, 1998
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Unsymmetrical MOS device having a gate insulator area offset from t...
- Patent number 5,675,168
- Issue date Oct 7, 1997
- Matsushita Electric Industrial Co., Ltd.
- Kyoji Yamashita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS transistor and its fabricating method
- Patent number 5,518,944
- Issue date May 21, 1996
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOS type semiconductor device having a low concentration impurity d...
- Patent number 5,512,771
- Issue date Apr 30, 1996
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDD FET with polysilicon sidewalls
- Patent number 5,386,133
- Issue date Jan 31, 1995
- Matsushita Electric Industrial Co., Ltd.
- Akira Hiroki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of proudcing a MIS transistor
- Patent number 5,221,632
- Issue date Jun 22, 1993
- Matsushita Electric Industrial Co., Ltd.
- Kazumi Kurimoto
- H01 - BASIC ELECTRIC ELEMENTS

Akira Hiroki

Person

Patents Grantslast 30 patents

MOS type semiconductor device having an impurity diffusion layer

Complementary semiconductor device and method for producing the same

MOS type semiconductor device having an impurity diffusion layer wi...

Method for forming complementary MOS device having asymmetric regio...

MIS transistor with gate sidewall insulating layer

Unsymmetrical MOS device having a gate insulator area offset from t...

MOS transistor and its fabricating method

MOS type semiconductor device having a low concentration impurity d...

LDD FET with polysilicon sidewalls

Method of proudcing a MIS transistor