Akira Hokazono

Person

Kawasaki, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Storage device
- Patent number 10,734,449
- Issue date Aug 4, 2020
- TOSHIBA MEMORY CORPORATION
- Yusuke Arayashiki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Memory device
- Patent number 10,079,268
- Issue date Sep 18, 2018
- TOSHIBA MEMORY CORPORATION
- Hiroki Okamoto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed channel bulk fin field effect transistor
- Patent number 9,484,262
- Issue date Nov 1, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunnel FET
- Patent number 9,437,735
- Issue date Sep 6, 2016
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 9,324,714
- Issue date Apr 26, 2016
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 9,324,798
- Issue date Apr 26, 2016
- Kabushiki Kaisha Toshiba
- Yoshiyuki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stressed channel bulk fin field effect transistor
- Patent number 9,246,005
- Issue date Jan 26, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 9,224,850
- Issue date Dec 29, 2015
- Kabushiki Kaisha Toshiba
- Masakazu Goto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Pass gate, semiconductor memory, and semiconductor device
- Patent number 8,872,271
- Issue date Oct 28, 2014
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing same
- Patent number 8,841,191
- Issue date Sep 23, 2014
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 8,841,728
- Issue date Sep 23, 2014
- Kabushiki Kaisha Toshiba
- Yoshiyuki Kondo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including a p-type transistor having extension...
- Patent number 8,134,159
- Issue date Mar 13, 2012
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 8,049,280
- Issue date Nov 1, 2011
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising gate electrode having arsenic and p...
- Patent number 8,004,050
- Issue date Aug 23, 2011
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,985,985
- Issue date Jul 26, 2011
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of fabricating the same
- Patent number 7,888,747
- Issue date Feb 15, 2011
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing semiconductor device
- Patent number 7,750,381
- Issue date Jul 6, 2010
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device comprising gate electrode having arsenic and p...
- Patent number 7,714,364
- Issue date May 11, 2010
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device
- Patent number 7,554,165
- Issue date Jun 30, 2009
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing a semiconductor de...
- Patent number 7,427,796
- Issue date Sep 23, 2008
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having metal silicide films formed on source a...
- Patent number 7,141,467
- Issue date Nov 28, 2006
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-shaped semiconductor device
- Patent number 7,129,550
- Issue date Oct 31, 2006
- Kabushiki Kaisha Toshiba
- Makoto Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and semiconductor device manufacturing method
- Patent number 7,061,054
- Issue date Jun 13, 2006
- Kabushiki Kaisha Toshiba
- Kanna Tomiye
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having active regions connected together by in...
- Patent number 7,045,409
- Issue date May 16, 2006
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with an L-shaped/reversed L-shaped gate side-w...
- Patent number 6,956,276
- Issue date Oct 18, 2005
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a gate electrode with a sidewall insula...
- Patent number 6,927,459
- Issue date Aug 9, 2005
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device with an L-shaped/rev...
- Patent number 6,881,633
- Issue date Apr 19, 2005
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device
- Patent number 6,875,665
- Issue date Apr 5, 2005
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having active regions connected together by in...
- Patent number 6,864,544
- Issue date Mar 8, 2005
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method of manufacturing the same
- Patent number 6,608,354
- Issue date Aug 19, 2003
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
STORAGE DEVICE
- Publication number 20200098829
- Publication date Mar 26, 2020
- Toshiba Memory Corporation
- Yusuke ARAYASHIKI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR MEMORY DEVICE
- Publication number 20200091236
- Publication date Mar 19, 2020
- Toshiba Memory Corporation
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MEMORY DEVICE
- Publication number 20180083068
- Publication date Mar 22, 2018
- Toshiba Memory Corporation
- Hiroki OKAMOTO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20170077105
- Publication date Mar 16, 2017
- Kabushiki Kaisha Toshiba
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20160247917
- Publication date Aug 25, 2016
- Kabushiki Kaisha Toshiba
- Yoshiyuki KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED CHANNEL BULK FIN FIELD EFFECT TRANSISTOR
- Publication number 20160035626
- Publication date Feb 4, 2016
- International Business Machines Corporation
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20150371992
- Publication date Dec 24, 2015
- Kabushiki Kaisha Toshiba
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF
- Publication number 20150243769
- Publication date Aug 27, 2015
- Kabushiki Kaisha Toshiba
- Masakazu GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED CHANNEL BULK FIN FIELD EFFECT TRANSISTOR
- Publication number 20150228789
- Publication date Aug 13, 2015
- Kabushiki Kaisha Toshiba
- Veeraraghavan S. Basker
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20150129960
- Publication date May 14, 2015
- Kabushiki Kaisha Toshiba
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140291736
- Publication date Oct 2, 2014
- Kabushiki Kaisha Toshiba
- Masakazu GOTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140225170
- Publication date Aug 14, 2014
- Yoshiyuki KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME
- Publication number 20140209863
- Publication date Jul 31, 2014
- Yoshiyuki KONDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOS SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME
- Publication number 20140175553
- Publication date Jun 26, 2014
- Toshitaka MIYATA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PASS GATE, SEMICONDUCTOR MEMORY, AND SEMICONDUCTOR DEVICE
- Publication number 20140091396
- Publication date Apr 3, 2014
- Kabushiki Kaisha Toshiba
- Akira HOKAZONO
- G11 - INFORMATION STORAGE
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME
- Publication number 20140054657
- Publication date Feb 27, 2014
- Kabushiki Kaisha Toshiba
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF STI TRENCHES FOR LIMITING PN-JUNCTION LEAKAGE
- Publication number 20130119506
- Publication date May 16, 2013
- Toshiba America Electronic Components, Inc
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20100252869
- Publication date Oct 7, 2010
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20100224936
- Publication date Sep 9, 2010
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE COMPRISING GATE ELECTRODE HAVING ARSENIC AND P...
- Publication number 20100200935
- Publication date Aug 12, 2010
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20100181625
- Publication date Jul 22, 2010
- Kabushiki Kaisha Toshiba
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20090283842
- Publication date Nov 19, 2009
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20090243002
- Publication date Oct 1, 2009
- Kabushiki Kaisha Toshiba
- Takeshi SONEHARA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20090166685
- Publication date Jul 2, 2009
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME
- Publication number 20090039440
- Publication date Feb 12, 2009
- Kabushiki Kaisha Toshiba
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE
- Publication number 20080277742
- Publication date Nov 13, 2008
- Kabushiki Kaisha Toshiba
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
- Publication number 20080230805
- Publication date Sep 25, 2008
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING CMOS DEVICE
- Publication number 20080054364
- Publication date Mar 6, 2008
- Akira HOKAZONO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and method of manufacturing the same
- Publication number 20060163675
- Publication date Jul 27, 2006
- Kabushiki Kaisha Toshiba
- Akira Hokazono
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor device and manufacturing method thereof
- Publication number 20060166456
- Publication date Jul 27, 2006
- Makoto Fujiwara
- H01 - BASIC ELECTRIC ELEMENTS

Akira Hokazono

Person

Patents Grantslast 30 patents

Storage device

Memory device

Stressed channel bulk fin field effect transistor

Tunnel FET

Semiconductor device

Semiconductor device and method for manufacturing the same

Stressed channel bulk fin field effect transistor

Semiconductor device and method of manufacturing the same

Pass gate, semiconductor memory, and semiconductor device

Semiconductor device and method of manufacturing same

Semiconductor device and method of manufacturing the same

Semiconductor device including a p-type transistor having extension...

Semiconductor device and method of fabricating the same

Semiconductor device comprising gate electrode having arsenic and p...

Semiconductor device and method of fabricating the same

Semiconductor device and method of fabricating the same

Semiconductor device and method of manufacturing semiconductor device

Semiconductor device comprising gate electrode having arsenic and p...

Semiconductor device

Semiconductor device and method of manufacturing a semiconductor de...

Semiconductor device having metal silicide films formed on source a...

Fin-shaped semiconductor device

Semiconductor device and semiconductor device manufacturing method

Semiconductor device having active regions connected together by in...

Semiconductor device with an L-shaped/reversed L-shaped gate side-w...

Semiconductor device having a gate electrode with a sidewall insula...

Method of manufacturing a semiconductor device with an L-shaped/rev...

Method of manufacturing a semiconductor device

Semiconductor device having active regions connected together by in...

Semiconductor device and method of manufacturing the same

Patents Applicationslast 30 patents

STORAGE DEVICE

SEMICONDUCTOR MEMORY DEVICE

MEMORY DEVICE

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE

STRESSED CHANNEL BULK FIN FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND MANUFACTURING METHOD THEREOF

STRESSED CHANNEL BULK FIN FIELD EFFECT TRANSISTOR

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

MOS SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME

PASS GATE, SEMICONDUCTOR MEMORY, AND SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SAME

FORMATION OF STI TRENCHES FOR LIMITING PN-JUNCTION LEAKAGE

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE COMPRISING GATE ELECTRODE HAVING ARSENIC AND P...

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE AND METHOD OF FABRICATING THE SAME

SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE HAVING CMOS DEVICE

Semiconductor device and method of manufacturing the same

Semiconductor device and manufacturing method thereof