Akira Ito

Person

Irvine, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Transistor structures
- Patent number 10,971,622
- Issue date Apr 6, 2021
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Ultra high density metal-oxide-metal capacitor
- Patent number 10,903,305
- Issue date Jan 26, 2021
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET LDMOS devices with improved reliability
- Patent number 10,505,020
- Issue date Dec 10, 2019
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-shaped field effect transistor and capacitor structures
- Patent number 10,396,070
- Issue date Aug 27, 2019
- Avago Technologies International Sales Pte. Limited
- Shom Surendran Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET cascode laterally-diffused semiconductor device
- Patent number 10,396,159
- Issue date Aug 27, 2019
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused MOSFET on fully depleted SOI having low on-resis...
- Patent number 10,312,365
- Issue date Jun 4, 2019
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET LDMOS devices with additional dynamic control
- Patent number 10,262,994
- Issue date Apr 16, 2019
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional LVDMOS transistor structures
- Patent number 10,262,992
- Issue date Apr 16, 2019
- Avago Technologies International Sales Pte. Limited
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FDSOI LDMOS semiconductor device
- Patent number 10,115,821
- Issue date Oct 30, 2018
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Shom Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
UTBB FDSOI split gate devices
- Patent number 9,978,848
- Issue date May 22, 2018
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-shaped field effect transistor and capacitor structures
- Patent number 9,941,271
- Issue date Apr 10, 2018
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Shom Surendran Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a fully depleted semiconductor-on-insulator progra...
- Patent number 9,865,607
- Issue date Jan 9, 2018
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended drain MOS device for FDSOI devices
- Patent number 9,799,524
- Issue date Oct 24, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reduced footprint LDMOS structure for finFET technologies
- Patent number 9,698,148
- Issue date Jul 4, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Shom Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
One time programmable memory with a twin gate structure
- Patent number 9,659,944
- Issue date May 23, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Qintao Zhang
- G11 - INFORMATION STORAGE
Information Patent Grant
Structure for HCI improvement in bulk finFET technologies
- Patent number 9,647,121
- Issue date May 9, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a programmable cell and structure thereof
- Patent number 9,634,014
- Issue date Apr 25, 2017
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor devices and fabrication methods
- Patent number 9,583,613
- Issue date Feb 28, 2017
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Including low and high-voltage CMOS devices in CMOS process
- Patent number 9,520,398
- Issue date Dec 13, 2016
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-gate device with planar channel
- Patent number 9,478,542
- Issue date Oct 25, 2016
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Super junction LDMOS finFET devices
- Patent number 9,472,615
- Issue date Oct 18, 2016
- Broadcom Corporation
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended-drain transistor using inner spacer
- Patent number 9,379,212
- Issue date Jun 28, 2016
- Broadcom Corporation
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
LDMOS device and structure for bulk FinFET technology
- Patent number 9,379,236
- Issue date Jun 28, 2016
- Broadcom Corporation
- Shom Surendran Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal-insulator-metal capacitor structure
- Patent number 9,337,188
- Issue date May 10, 2016
- Broadcom Corporation
- Shom Surendran Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal oxide semiconductor devices and fabrication methods
- Patent number 9,306,057
- Issue date Apr 5, 2016
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal finger capacitor for high-K metal gate processes
- Patent number 9,287,209
- Issue date Mar 15, 2016
- Broadcom Corporation
- Agnes Neves Woo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices including a lateral bipolar structure with hi...
- Patent number 9,190,501
- Issue date Nov 17, 2015
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Native PMOS device with low threshold voltage and high drive curren...
- Patent number 9,184,287
- Issue date Nov 10, 2015
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated native device without a halo implanted channel region an...
- Patent number 9,165,834
- Issue date Oct 20, 2015
- Broadcom Corporation
- Xiangdong Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy end-gate based anti-fuse device for finFET technologies
- Patent number 9,165,936
- Issue date Oct 20, 2015
- Broadcom Corporation
- Shom Surendran Ponoth
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TRANSISTOR STRUCTURES
- Publication number 20200111905
- Publication date Apr 9, 2020
- Avago Technologies International Sales Pte. Limited
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ULTRA HIGH DENSITY METAL-OXIDE-METAL CAPACITOR
- Publication number 20200066833
- Publication date Feb 27, 2020
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET-CASCODE LATERALLY-DIFFUSED SEMICONDUCTOR DEVICE
- Publication number 20190333995
- Publication date Oct 31, 2019
- Avago Technologies International Sales Pte. Limited
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY DIFFUSED MOSFET ON FULLY DEPLETED SOI
- Publication number 20190245082
- Publication date Aug 8, 2019
- Avago Technologies International Sales Pte. Limited
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET CASCODE LATERALLY-DIFFUSED SEMICONDUCTOR DEVICE
- Publication number 20190131402
- Publication date May 2, 2019
- Avago Technologies General IP (Singapore) PTE. LTD.
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET LDMOS DEVICES WITH ADDITIONAL DYNAMIC CONTROL
- Publication number 20180308841
- Publication date Oct 25, 2018
- Avago Technologies General IP (Singapore) PTE. LTD.
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE DIMENSIONAL LVDMOS TRANSISTOR STRUCTURES
- Publication number 20180286858
- Publication date Oct 4, 2018
- Avago Technologies General IP (Singapore) PTE. LTD.
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-SHAPED FIELD EFFECT TRANSISTOR AND CAPACITOR STRUCTURES
- Publication number 20180182753
- Publication date Jun 28, 2018
- Avago Technologies General IP (Singapore) Pte. Ltd.
- Shom Surendran PONOTH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FDSOI LDMOS Semiconductor Device
- Publication number 20180122942
- Publication date May 3, 2018
- BROADCOM CORPORATION
- Shom PONOTH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET LDMOS DEVICES WITH IMPROVED RELIABILITY
- Publication number 20180108755
- Publication date Apr 19, 2018
- Avago Technologies General IP (Singapore) PTE. LTD.
- Qing LIU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A FULLY DEPLETED SEMICONDUCTOR-ON-INSULATOR PROGRA...
- Publication number 20170373074
- Publication date Dec 28, 2017
- BROADCOM CORPORATION
- Qing Liu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extended Drain MOS Device for FDSOI Devices
- Publication number 20170018618
- Publication date Jan 19, 2017
- BROADCOM CORPORATION
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPLIT-GATE DEVICES
- Publication number 20170018612
- Publication date Jan 19, 2017
- BROADCOM CORPORATION
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UTBB FDSOI Split Gate Devices
- Publication number 20170018622
- Publication date Jan 19, 2017
- BROADCOM CORPORATION
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reduced Footprint LDMOS Structure for FINFET Technologies
- Publication number 20170018551
- Publication date Jan 19, 2017
- BROADCOM CORPORATION
- Shom Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Split Work Functions
- Publication number 20170005093
- Publication date Jan 5, 2017
- BROADCOM CORPORATION
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
One Time Programmable Memory with a Twin Gate Structure
- Publication number 20170005103
- Publication date Jan 5, 2017
- BROADCOM CORPORATION
- Qintao ZHANG
- G11 - INFORMATION STORAGE
Information Patent Application
INCLUDING LOW AND HIGH-VOLTAGE CMOS DEVICES IN CMOS PROCESS
- Publication number 20160379979
- Publication date Dec 29, 2016
- BROADCOM CORPORATION
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A PROGRAMMABLE CELL AND STRUCTURE THEREOF
- Publication number 20160276355
- Publication date Sep 22, 2016
- BROADCOM CORPORATION
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITOR STRUCTURE
- Publication number 20160233212
- Publication date Aug 11, 2016
- BROADCOM CORPORATION
- Shom Surendran PONOTH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Metal Oxide Semiconductor Devices and Fabrication Methods
- Publication number 20160211367
- Publication date Jul 21, 2016
- Broadcom Corporation
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTENDED-DRAIN TRANSISTOR USING INNER SPACER
- Publication number 20160190281
- Publication date Jun 30, 2016
- BROADCOM CORPORATION
- Qintao Zhang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUPER JUNCTION LDMOS FINFET DEVICES
- Publication number 20160181358
- Publication date Jun 23, 2016
- BROADCOM CORPORATION
- Qintao ZHANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INCREASING BREAKDOWN VOLTAGE OF LDMOS DEVICES FOR FOUNDRY PROCESSES
- Publication number 20160149033
- Publication date May 26, 2016
- BROADCOM CORPORATION
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NATIVE PMOS DEVICE WITH LOW THRESHOLD VOLTAGE AND HIGH DRIVE CURREN...
- Publication number 20160071935
- Publication date Mar 10, 2016
- BROADCOM CORPORATION
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LDMOS DEVICE AND STRUCTURE FOR BULK FINFET TECHNOLOGY
- Publication number 20150357462
- Publication date Dec 10, 2015
- BROADCOM CORPORATION
- Shom Surendran PONOTH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR STRUCTURE HAVING ONE OR MORE FINS
- Publication number 20150333066
- Publication date Nov 19, 2015
- BROADCOM CORPORATION
- Akira Ito
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY END-GATE BASED ANTI-FUSE DEVICE FOR FINFET TECHNOLOGIES
- Publication number 20150200196
- Publication date Jul 16, 2015
- BROADCOM CORPORATION
- Shom Surendran Ponoth
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL-INSULATOR-METAL CAPACITOR STRUCTURE
- Publication number 20150108557
- Publication date Apr 23, 2015
- BROADCOM CORPORATION
- Shom Surendran PONOTH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-SHAPED FIELD EFFECT TRANSISTOR AND CAPACITOR STRUCTURES
- Publication number 20150097220
- Publication date Apr 9, 2015
- BROADCOM CORPORATION
- Shom Surendran PONOTH
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Transistor structures

Ultra high density metal-oxide-metal capacitor

FinFET LDMOS devices with improved reliability

Fin-shaped field effect transistor and capacitor structures

FinFET cascode laterally-diffused semiconductor device

Laterally diffused MOSFET on fully depleted SOI having low on-resis...

FinFET LDMOS devices with additional dynamic control

Three dimensional LVDMOS transistor structures

FDSOI LDMOS semiconductor device

UTBB FDSOI split gate devices

Fin-shaped field effect transistor and capacitor structures

Method of making a fully depleted semiconductor-on-insulator progra...

Extended drain MOS device for FDSOI devices

Reduced footprint LDMOS structure for finFET technologies

One time programmable memory with a twin gate structure

Structure for HCI improvement in bulk finFET technologies

Method of making a programmable cell and structure thereof

Metal oxide semiconductor devices and fabrication methods

Including low and high-voltage CMOS devices in CMOS process

Multi-gate device with planar channel

Super junction LDMOS finFET devices

Extended-drain transistor using inner spacer

LDMOS device and structure for bulk FinFET technology

Metal-insulator-metal capacitor structure

Metal oxide semiconductor devices and fabrication methods

Metal finger capacitor for high-K metal gate processes

Semiconductor devices including a lateral bipolar structure with hi...

Native PMOS device with low threshold voltage and high drive curren...

Integrated native device without a halo implanted channel region an...

Dummy end-gate based anti-fuse device for finFET technologies

Patents Applicationslast 30 patents

TRANSISTOR STRUCTURES

ULTRA HIGH DENSITY METAL-OXIDE-METAL CAPACITOR

FINFET-CASCODE LATERALLY-DIFFUSED SEMICONDUCTOR DEVICE

LATERALLY DIFFUSED MOSFET ON FULLY DEPLETED SOI

FINFET CASCODE LATERALLY-DIFFUSED SEMICONDUCTOR DEVICE

FINFET LDMOS DEVICES WITH ADDITIONAL DYNAMIC CONTROL

THREE DIMENSIONAL LVDMOS TRANSISTOR STRUCTURES

FIN-SHAPED FIELD EFFECT TRANSISTOR AND CAPACITOR STRUCTURES

FDSOI LDMOS Semiconductor Device

FINFET LDMOS DEVICES WITH IMPROVED RELIABILITY

METHOD OF MAKING A FULLY DEPLETED SEMICONDUCTOR-ON-INSULATOR PROGRA...

Extended Drain MOS Device for FDSOI Devices

SPLIT-GATE DEVICES

UTBB FDSOI Split Gate Devices

Reduced Footprint LDMOS Structure for FINFET Technologies

Semiconductor Device with Split Work Functions

One Time Programmable Memory with a Twin Gate Structure

INCLUDING LOW AND HIGH-VOLTAGE CMOS DEVICES IN CMOS PROCESS

METHOD OF MAKING A PROGRAMMABLE CELL AND STRUCTURE THEREOF

METAL-INSULATOR-METAL CAPACITOR STRUCTURE

Metal Oxide Semiconductor Devices and Fabrication Methods

EXTENDED-DRAIN TRANSISTOR USING INNER SPACER

SUPER JUNCTION LDMOS FINFET DEVICES

INCREASING BREAKDOWN VOLTAGE OF LDMOS DEVICES FOR FOUNDRY PROCESSES

NATIVE PMOS DEVICE WITH LOW THRESHOLD VOLTAGE AND HIGH DRIVE CURREN...

LDMOS DEVICE AND STRUCTURE FOR BULK FINFET TECHNOLOGY

FIELD EFFECT TRANSISTOR STRUCTURE HAVING ONE OR MORE FINS

DUMMY END-GATE BASED ANTI-FUSE DEVICE FOR FINFET TECHNOLOGIES

METAL-INSULATOR-METAL CAPACITOR STRUCTURE

FIN-SHAPED FIELD EFFECT TRANSISTOR AND CAPACITOR STRUCTURES