Membership
Tour
Register
Log in
Akira Suzuki
Follow
Person
Nara, JP
People
Overview
Industries
Organizations
People
Information
Impact
Patents Grants
last 30 patents
Information
Patent Grant
Nitride-type III-V HEMT having an InN 2DEG channel layer
Patent number
6,177,685
Issue date
Jan 23, 2001
Sharp Kabushiki Kaisha
Nobuaki Teraguchi
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of producing silicon-carbide single crystals by sublimation...
Patent number
5,433,167
Issue date
Jul 18, 1995
Sharp Kabushiki Kaisha
Katsuki Furukawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Light emitting diode
Patent number
5,387,804
Issue date
Feb 7, 1995
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Light emitting diode
Patent number
5,329,141
Issue date
Jul 12, 1994
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon carbide semiconductor device
Patent number
5,319,220
Issue date
Jun 7, 1994
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Multi-layer silicon carbide light emitting diode having a PN junction
Patent number
5,313,078
Issue date
May 17, 1994
Sharp Kabushiki Kaisha
Yoshihisa Fujii
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for growing a silicon carbide single crystal
Patent number
5,288,365
Issue date
Feb 22, 1994
Sharp Kabushiki Kaisha
Katsuki Furukawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for the growth of silicon carbide single crystals
Patent number
5,279,701
Issue date
Jan 18, 1994
Sharp Kabushiki Kaisha
Mitsuhiro Shigeta
C30 - CRYSTAL GROWTH
Information
Patent Grant
Manufacture of silicon carbide (SiC) metal oxide semiconductor (MOS...
Patent number
5,272,107
Issue date
Dec 21, 1993
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon carbide light emitting diode and a method for the same
Patent number
5,243,204
Issue date
Sep 7, 1993
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method for the production of SiC single crystals by using a specifi...
Patent number
5,230,768
Issue date
Jul 27, 1993
Sharp Kabushiki Kaisha
Katsuki Furukawa
C30 - CRYSTAL GROWTH
Information
Patent Grant
Schottky barrier gate type field effect transistor
Patent number
5,229,625
Issue date
Jul 20, 1993
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon carbide MOS type field-effect transistor with at least one...
Patent number
5,216,264
Issue date
Jun 1, 1993
Sharp Kabushiki Kaisha
Yoshihisa Fujii
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon carbide semiconductor device
Patent number
5,184,199
Issue date
Feb 2, 1993
Sharp Kabushiki Kaisha
Yoshihisa Fujii
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon carbide field-effect transistor with improved breakdown vol...
Patent number
5,170,231
Issue date
Dec 8, 1992
Sharp Kabushiki Kaisha
Yoshihisa Fujii
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of manufacturing silicon carbide FETS
Patent number
5,135,885
Issue date
Aug 4, 1992
Sharp Corporation
Katsuki Furukawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon carbide semiconductor device with ohmic electrode consistin...
Patent number
5,124,779
Issue date
Jun 23, 1992
Sharp Kabushiki Kaisha
Katsuki Furukawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Silicon carbide light emitting diode having a pn junction
Patent number
5,063,421
Issue date
Nov 5, 1991
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for producing a single-crystal substrate of silicon carbide
Patent number
5,037,502
Issue date
Aug 6, 1991
Sharp Kabushiki Kaisha
Akira Suzuki
C30 - CRYSTAL GROWTH
Information
Patent Grant
Method for producing a silicon carbide semiconductor device
Patent number
5,030,580
Issue date
Jul 9, 1991
Sharp Kabushiki Kaisha
Katsuki Furukawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Electrode structure for silicon carbide semiconductors
Patent number
4,990,994
Issue date
Feb 5, 1991
Sharp Kabushiki Kaisha
Katsuki Furukawa
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Process for producing a SiC semiconductor device
Patent number
4,966,860
Issue date
Oct 30, 1990
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating single-crystal substrates of silicon carbide
Patent number
4,897,149
Issue date
Jan 30, 1990
Sharp Kabushiki Kaisha
Akira Suzuki
C30 - CRYSTAL GROWTH
Information
Patent Grant
Semiconductor device
Patent number
4,897,710
Issue date
Jan 30, 1990
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Heteroepitaxial growth of SiC on Si
Patent number
4,865,659
Issue date
Sep 12, 1989
Sharp Kabushiki Kaisha
Mitsuhiro Shigeta
C30 - CRYSTAL GROWTH
Information
Patent Grant
Process for producing a SiC semiconductor device
Patent number
4,762,806
Issue date
Aug 9, 1988
Sharp Kabushiki Kaisha
Akira Suzuki
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Grant
Method of fabricating single-crystal substrates of silicon carbide
Patent number
4,623,425
Issue date
Nov 18, 1986
Sharp Kabushiki Kaisha
Akira Suzuki
C30 - CRYSTAL GROWTH