Claims
- 1. A method for the growth of silicon carbide single crystals, said method comprising the preparation of a silicon single crystal substrate having growth areas and the step of growing silicon carbide single crystals on the growth areas with a thickness approximately equal to a more than critical thickness t,
- said growth areas having a crystal orientation inclined by an off angle .theta. from the [100] direction toward the [011] or [011] direction and said off angle .theta. being smaller than 10.degree. (ten degrees) (with the proviso that the angle .theta. is not equal to tan (.sqroot.2/2) degrees),
- said critical thickness t being approximately equal to d(.sqroot.2+tan.theta.)/.vertline.1-.sqroot.2tan.theta..vertline. for said off angle .theta. and a lateral dimension d,
- said lateral dimension d being specified by rectangular coordinates attached onto said growth area,
- the two axes of said rectangular coordinates being taken parallel and perpendicular to [011] in case of an off angle .theta. toward [011],
- or the two axes of said rectangular coordinates being taken parallel and perpendicular to [011] in case of an off angle .theta. toward [011],
- said lateral dimension d being equal to the length of said growth area along said axis perpendicular to [011] in case of an off angle .theta. toward [011],
- or said lateral dimension d being equal to the length of said growth area along said axis perpendicular to [011] in case of an off angle .theta. toward [011], and
- said lateral dimension d being in the range of 0.1 to 100 .mu.m.
- 2. A method for the growth of silicon carbide single crystals according to claim 1,
- wherein said off angle .theta. is equal to tan.sup.-1 (.sqroot.2/n) from the [100] direction toward the [011] direction,
- said critical thickness t being approximately equal to .sqroot.2d(n+1)/.vertline.n-2.vertline. (where n is an integer of from 1 to 8, with proviso that it is not equal to 2).
- 3. A method for the growth of silicon carbide single crystals, said method comprising the preparation of a silicon single crystal substrate having growth areas and the step of growing silicon carbide single crystals on the growth areas with a thickness approximately equal to or more than a critical thickness t,
- said growth areas having a crystal orientation of [100], said critical thickness t being approximately equal to .sqroot.2d for a lateral dimension d,
- said lateral dimension d being specified by rectangular coordinates attached onto said growth area,
- the two axes of said rectangular coordinates being taken parallel to [011] and [011],
- said lateral dimension d being equal to the longer one of the length of said growth area along said axes, and
- said lateral dimension d being in the range of 0.1 to 100 .mu.m.
- 4. A method for the growth of silicon carbide single crystals, said method comprising the preparation of a silicon single crystal substrate having growth areas and the step of growing silicon carbide single crystals on the growth areas with a thickness approximately equal to or more than a critical thickness t,
- said growth areas having a crystal orientation inclined by an off angle .theta. from the [100] direction toward the [011] or [011] direction and said off angle .theta. being smaller than 10.degree. (ten degrees) (with the proviso that the angle .theta. is not equal to tan (.sqroot.2/2) degrees),
- said critical thickness t being approximately equal to d(.sqroot.2+tan.theta.)/.vertline.1-.sqroot.2tan.theta..vertline. for said off angle .theta. and a lateral dimension d,
- said lateral dimension d being specified by rectangular coordinates attached onto said growth area,
- the two axes of said rectangular coordinates being taken parallel and perpendicular to [011] in case of an off angle .theta. toward [011],
- or the two axes of said rectangular coordinates being taken parallel and perpendicular to [011] in case of an off angle .theta. toward [011],
- said lateral dimension d being equal to the length of said silicon carbide single crystal grown on said growth area along said axes perpendicular to [011] in case of an off angle .theta. toward [011],
- or said lateral dimension d being equal to the length of said silicon carbide single crystal grown on said growth area along said axis perpendicular to [011] in case of an off angle .theta. toward [011], and
- said lateral dimension d being in the range of 0.1 to 100 .mu.m.
- 5. A method for the growth of silicon carbide single crystals, said method comprising the preparation of a silicon single crystal substrate having growth areas and the step of growing silicon carbide single crystals on the growth areas with a thickness approximately equal to or more than a critical thickness t,
- said growth areas having a crystal orientation of [100], said critical thickness t being approximately equal to .sqroot.2d for a lateral dimension d,
- said lateral dimension d being specified by rectangular coordinates attached onto said growth area,
- the two axes of said rectangular coordinates being taken parallel to [011] and [011],
- said lateral dimension d being equal to the longer one of the length of said silicon carbide single crystal grown on said growth area along said axes, and
- said lateral dimension d being in the range of 0.1 to 100 .mu.m.
- 6. A method for the growth of silicon carbide single crystals according to claim 4,
- wherein said off angle .theta. is equal to tan.sup.-1 (.sqroot.2/n) from the [100] direction toward the [011] direction,
- said critical thickness t being approximately equal to .sqroot.2d(n+1)/.vertline.n-2.vertline. (where n is an integer of from 1 to 8, with proviso that it is not equal to 2).
- 7. A method for the growth of silicon carbide single crystals according to claim 6, wherein n is equal to 6.
- 8. A method for the growth of silicon carbide single crystals according to claim 2, wherein n is equal to 6.
Priority Claims (3)
Number |
Date |
Country |
Kind |
63-115080 |
May 1988 |
JPX |
|
63-334130 |
Dec 1988 |
JPX |
|
63-334134 |
Dec 1988 |
JPX |
|
Parent Case Info
This application is a continuation of application Ser. No. 568,500, filed Aug. 15, 1990 now abandoned, which was a continuation in part of application Ser. No. 07/350,666 filed Aug. 11, 1989 now abandoned.
US Referenced Citations (9)
Non-Patent Literature Citations (4)
Entry |
Kong et al The effect of off Axis Si (100) Substrates on the defect Structure and The Electrical Properties of .beta.SiC Thin Films, J. Mater. Res. 3(3) May/Jun. 1988 pp. 521-531. |
Nishino et al., Applied Physics Letters (Mar. 1, 1983) 42(5):460-462. |
Shigeta et al., Applied Physics Letters (Oct. 9, 1989) 55:(15):1522-1524. |
Fitzgerald et al., Applied Physics Letters (May 2, 1988) 55(18):1496-1498. |
Continuations (1)
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Number |
Date |
Country |
Parent |
568500 |
Aug 1990 |
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Continuation in Parts (1)
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Number |
Date |
Country |
Parent |
350666 |
May 1989 |
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