Alain Charles

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Compiegne, FR

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Patents Grantslast 30 patents

Information Patent Grant
Charge trapping prevention III-Nitride transistor
- Patent number 10,211,329
- Issue date Feb 19, 2019
- Infineon Technologies Americas Corp.
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with contiguous gate trenches and offset...
- Patent number 9,818,743
- Issue date Nov 14, 2017
- Infineon Technologies Americas Corp.
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
III-nitride device with back-gate and field plate for improving tra...
- Patent number 9,112,009
- Issue date Aug 18, 2015
- International Rectifier Corporation
- Alain Charles
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Charge Trapping Prevention III-Nitride Transistor
- Publication number 20170365701
- Publication date Dec 21, 2017
- Infineon Technologies Americas Corp.
- Hyeongnam Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-Nitride Device with Improved Transconductance
- Publication number 20150357458
- Publication date Dec 10, 2015
- INTERNATIONAL RECTIFIER CORPORATION
- Alain Charles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device with Contiguous Gate Trenches and Offset...
- Publication number 20140374825
- Publication date Dec 25, 2014
- Kapil Kelkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
III-NITRIDE DEVICE WITH BACK-GATE AND FIELD PLATE AND PROCESS FOR I...
- Publication number 20100065923
- Publication date Mar 18, 2010
- Alain Charles
- H01 - BASIC ELECTRIC ELEMENTS