Alan C. Warren

Person

Peekskill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Method of making a compound semiconductor having metallic inclusions
- Patent number 5,471,948
- Issue date Dec 5, 1995
- International Business Machines Corporation
- Jeremy Burroughes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor having metallic inclusions and devices fabri...
- Patent number 5,371,399
- Issue date Dec 6, 1994
- International Business Machines Corporation
- Jeremy Burroughes
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strained defect-free epitaxial mismatched heterostructures and meth...
- Patent number 5,221,367
- Issue date Jun 22, 1993
- International Business Machines, Corp.
- Matthew F. Chisholm
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor interface control using cationic ingredient...
- Patent number 5,021,365
- Issue date Jun 4, 1991
- International Business Machines Corporation
- Peter D. Kirchner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Submicron dimension compound semiconductor fabrication using therma...
- Patent number 4,920,069
- Issue date Apr 24, 1990
- International Business Machines Corporation
- Eric R. Fossum
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor interface control
- Patent number 4,843,450
- Issue date Jun 27, 1989
- International Business Machines Corporation
- Peter D. Kirchner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Compound semiconductor surface termination
- Patent number 4,811,077
- Issue date Mar 7, 1989
- International Business Machines Corporation
- Alan B. Fowler
- H01 - BASIC ELECTRIC ELEMENTS

Alan C. Warren

Person

Patents Grantslast 30 patents

Method of making a compound semiconductor having metallic inclusions

Compound semiconductor having metallic inclusions and devices fabri...

Strained defect-free epitaxial mismatched heterostructures and meth...

Compound semiconductor interface control using cationic ingredient...

Submicron dimension compound semiconductor fabrication using therma...

Compound semiconductor interface control

Compound semiconductor surface termination