Ali Razavieh

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Field effect transistor with vertical nanowire in channel region an...
- Patent number 12,170,315
- Issue date Dec 17, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-based lateral bipolar junction transistor with reduced base res...
- Patent number 11,967,637
- Issue date Apr 23, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 11,605,672
- Issue date Mar 14, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor device and method of making suc...
- Patent number 11,462,632
- Issue date Oct 4, 2022
- GLOBALFOUNDRIES U.S. INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial semiconductor material regions for transistor devices and...
- Patent number 11,362,177
- Issue date Jun 14, 2022
- GLOBALFOUNDRIES U.S. INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial semiconductor material regions for transistor devices and...
- Patent number 11,205,699
- Issue date Dec 21, 2021
- GLOBALFOUNDRIES U.S. INC.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air spacer structures
- Patent number 11,094,794
- Issue date Aug 17, 2021
- GLOBALFOUNDRIES U.S. INC.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor comprising a matrix of nanowires and methods of making s...
- Patent number 11,049,934
- Issue date Jun 29, 2021
- GLOBALFOUNDRIES U.S. INC.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical field effect transistor
- Patent number 11,043,588
- Issue date Jun 22, 2021
- GLOBALFOUNDRIES U.S. INC.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 10,991,808
- Issue date Apr 27, 2021
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 10,964,750
- Issue date Mar 30, 2021
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 10,872,962
- Issue date Dec 22, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field-effect transistors including a two-dimensional material
- Patent number 10,818,803
- Issue date Oct 27, 2020
- GLOBALFOUNDRIES Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 10,566,436
- Issue date Feb 18, 2020
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Steep-switch field effect transistor with integrated bi-stable resi...
- Patent number 10,256,316
- Issue date Apr 9, 2019
- International Business Machines Corporation
- Julien Frougier
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Grant
Complementary FETs with wrap around contacts and methods of forming...
- Patent number 10,236,292
- Issue date Mar 19, 2019
- GLOBALFOUNDRIES Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Complementary FETs with wrap around contacts and method of forming...
- Patent number 10,192,867
- Issue date Jan 29, 2019
- GLOBALFOUNDRIES Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Negative-capacitance steep-switch field effect transistor with inte...
- Patent number 10,170,520
- Issue date Jan 1, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a nano-sheet transistor device with a thicker ga...
- Patent number 9,991,352
- Issue date Jun 5, 2018
- GLOBALFOUNDRIES Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DEVICE WITH VERTICAL NANOWIRE CHANNEL REGION
- Publication number 20250022915
- Publication date Jan 16, 2025
- GLOBALFOUNDRIES U.S. Inc.
- Ali RAZAVIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE WITH VERTICAL NANOWIRE CHANNEL REGION
- Publication number 20230215917
- Publication date Jul 6, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ali RAZAVIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-BASED LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RES...
- Publication number 20230061156
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING SUC...
- Publication number 20220199810
- Publication date Jun 23, 2022
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL EPITAXIAL SEMICONDUCTOR MATERIAL REGIONS FOR TRANSISTOR DEVIC...
- Publication number 20210233999
- Publication date Jul 29, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL EPITAXIAL SEMICONDUCTOR MATERIAL REGIONS FOR TRANSISTOR DEVIC...
- Publication number 20210118993
- Publication date Apr 22, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Arkadiusz Malinowski
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...
- Publication number 20210111225
- Publication date Apr 15, 2021
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIR SPACER STRUCTURES
- Publication number 20210098591
- Publication date Apr 1, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Julien FROUGIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR COMPRISING A MATRIX OF NANOWIRES AND METHODS OF MAKING S...
- Publication number 20210083049
- Publication date Mar 18, 2021
- GLOBALFOUNDRIES U.S. Inc.
- Ali Razavieh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT STRUCTURES OVER AN ACTIVE REGION OF A SEMICONDUCTOR DEVICE
- Publication number 20200373410
- Publication date Nov 26, 2020
- GLOBALFOUNDRIES INC.
- TUNG-HSING LEE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FIELD EFFECT TRANSISTOR
- Publication number 20200365728
- Publication date Nov 19, 2020
- GLOBALFOUNDRIES INC.
- Ali RAZAVIEH
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...
- Publication number 20200144385
- Publication date May 7, 2020
- International Business Machines Corporation
- Julien Frougier
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...
- Publication number 20190252508
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Julien Frougier
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...
- Publication number 20190252507
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Julien Frougier
- H04 - ELECTRIC COMMUNICATION TECHNIQUE
Information Patent Application
STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...
- Publication number 20190252465
- Publication date Aug 15, 2019
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Ali Razavieh

Person

Patents Grantslast 30 patents

Field effect transistor with vertical nanowire in channel region an...

Fin-based lateral bipolar junction transistor with reduced base res...

Steep-switch field effect transistor with integrated bi-stable resi...

Lateral bipolar junction transistor device and method of making suc...

Epitaxial semiconductor material regions for transistor devices and...

Epitaxial semiconductor material regions for transistor devices and...

Air spacer structures

Transistor comprising a matrix of nanowires and methods of making s...

Vertical field effect transistor

Steep-switch field effect transistor with integrated bi-stable resi...

Steep-switch field effect transistor with integrated bi-stable resi...

Steep-switch field effect transistor with integrated bi-stable resi...

Fin-type field-effect transistors including a two-dimensional material

Steep-switch field effect transistor with integrated bi-stable resi...

Steep-switch field effect transistor with integrated bi-stable resi...

Complementary FETs with wrap around contacts and methods of forming...

Complementary FETs with wrap around contacts and method of forming...

Negative-capacitance steep-switch field effect transistor with inte...

Methods of forming a nano-sheet transistor device with a thicker ga...

Patents Applicationslast 30 patents

DEVICE WITH VERTICAL NANOWIRE CHANNEL REGION

DEVICE WITH VERTICAL NANOWIRE CHANNEL REGION

FIN-BASED LATERAL BIPOLAR JUNCTION TRANSISTOR WITH REDUCED BASE RES...

LATERAL BIPOLAR JUNCTION TRANSISTOR DEVICE AND METHOD OF MAKING SUC...

NOVEL EPITAXIAL SEMICONDUCTOR MATERIAL REGIONS FOR TRANSISTOR DEVIC...

NOVEL EPITAXIAL SEMICONDUCTOR MATERIAL REGIONS FOR TRANSISTOR DEVIC...

STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...

AIR SPACER STRUCTURES

TRANSISTOR COMPRISING A MATRIX OF NANOWIRES AND METHODS OF MAKING S...

CONTACT STRUCTURES OVER AN ACTIVE REGION OF A SEMICONDUCTOR DEVICE

VERTICAL FIELD EFFECT TRANSISTOR

STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...

STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...

STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...

STEEP-SWITCH FIELD EFFECT TRANSISTOR WITH INTEGRATED BI-STABLE RESI...