Amitabh Jain

Person

Allen, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated circuit having chemically modified spacer surface
- Patent number 10,483,261
- Issue date Nov 19, 2019
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold mismatch and IDDQ reduction using split carbon co-implant...
- Patent number 10,068,802
- Issue date Sep 4, 2018
- Texas Instruments Incorporated
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for self-aligned retrograde well dopi...
- Patent number 9,960,086
- Issue date May 1, 2018
- GLOBALFOUNDRIES Inc.
- Mira Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having chemically modified spacer surface
- Patent number 9,620,423
- Issue date Apr 11, 2017
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit having chemically modified spacer surface
- Patent number 9,496,359
- Issue date Nov 15, 2016
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed channel insulated-gate field effect transistor with self-a...
- Patent number 9,245,975
- Issue date Jan 26, 2016
- Texas Instruments Incorporated
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium, carbon and halogen doping for PMOS transistors
- Patent number 9,024,384
- Issue date May 5, 2015
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Drain induced barrier lowering with anti-punch-through implant
- Patent number 8,987,748
- Issue date Mar 24, 2015
- Texas Instruments Incorporated
- Himadri Sekhar Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
ZTCR poly resistor in replacement gate flow
- Patent number 8,927,385
- Issue date Jan 6, 2015
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain-engineered MOSFETs having rimmed source-drain recesses
- Patent number 8,877,581
- Issue date Nov 4, 2014
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Recessed channel insulated-gate field effect transistor with self-a...
- Patent number 8,865,549
- Issue date Oct 21, 2014
- Texas Instruments Incorporated
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon and nitrogen doping for selected PMOS transistors on an inte...
- Patent number 8,853,042
- Issue date Oct 7, 2014
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Offset screen for shallow source/drain extension implants, and proc...
- Patent number 8,772,118
- Issue date Jul 8, 2014
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a CMOS device with a stressed-channel NMOS transi...
- Patent number 8,691,644
- Issue date Apr 8, 2014
- Texas Instruments Incorporated
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Carbon and nitrogen doping for selected PMOS transistor on an integ...
- Patent number 8,659,112
- Issue date Feb 25, 2014
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of shallow junctions by diffusion from a dielectronic dop...
- Patent number 8,580,663
- Issue date Nov 12, 2013
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Indium, carbon and halogen doping for PMOS transistors
- Patent number 8,558,310
- Issue date Oct 15, 2013
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for improved nickel silicide
- Patent number 8,372,750
- Issue date Feb 12, 2013
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Curvature reduction for semiconductor wafers
- Patent number 8,252,609
- Issue date Aug 28, 2012
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming strained channel PMOS devices and integrated cir...
- Patent number 8,253,205
- Issue date Aug 28, 2012
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer planarity control between pattern levels
- Patent number 8,216,945
- Issue date Jul 10, 2012
- Texas Instruments Incorporated
- Steven L. Prins
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Method of manufacturing a semiconductor device having reduced N/P o...
- Patent number 8,124,511
- Issue date Feb 28, 2012
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS fabrication process
- Patent number 8,125,035
- Issue date Feb 28, 2012
- Texas Instruments Incorporated
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of shallow junctions by diffusion from a dielectric doped...
- Patent number 8,026,135
- Issue date Sep 27, 2011
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methodology of improving the manufacturability of laser anneal
- Patent number 7,932,139
- Issue date Apr 26, 2011
- Texas Instruments Incorporated
- Haowen Bu
- B23 - MACHINE TOOLS METAL-WORKING NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Method for forming strained channel PMOS devices and integrated cir...
- Patent number 7,902,032
- Issue date Mar 8, 2011
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for preparing a source material for ion implantation
- Patent number 7,883,573
- Issue date Feb 8, 2011
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for improved nickel silicide
- Patent number 7,825,025
- Issue date Nov 2, 2010
- Texas Instruments Incorporated
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Antimony ion implantation for semiconductor components
- Patent number 7,795,122
- Issue date Sep 14, 2010
- Texas Instruments Incorporated
- Haowen Bu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having a dislocation loop located within a bou...
- Patent number 7,691,714
- Issue date Apr 6, 2010
- Texas Instruments Incorporated
- Antonio Luis Pacheco Rotondaro
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR SELF-ALIGNED RETROGRADE WELL DOPI...
- Publication number 20180090391
- Publication date Mar 29, 2018
- GLOBALFOUNDRIES INC.
- Mira Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE
- Publication number 20170179126
- Publication date Jun 22, 2017
- TEXAS INSTRUMENTS INCORPORATED
- BRIAN K. KIRKPATRICK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE
- Publication number 20160233132
- Publication date Aug 11, 2016
- TEXAS INSTRUMENTS INCORPORATED
- BRIAN K. KIRKPATRICK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE
- Publication number 20160027884
- Publication date Jan 28, 2016
- TEXAS INSTRUMENTS INCORPORATED
- BRIAN K. KIRKPATRICK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RECESSED CHANNEL INSULATED-GATE FIELD EFFECT TRANSISTOR WITH SELF-A...
- Publication number 20150037952
- Publication date Feb 5, 2015
- TEXAS INSTRUMENTS INCORPORATED
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ZTCR POLY RESISTOR IN REPLACEMENT GATE FLOW
- Publication number 20140167182
- Publication date Jun 19, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Recessed Channel Insulated-Gate Field Effect Transistor with Self-A...
- Publication number 20140159142
- Publication date Jun 12, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Kwan-Yong Lim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON AND NITROGEN DOPING FOR SELECTED PMOS TRANSISTORS ON AN INTE...
- Publication number 20140120675
- Publication date May 1, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM, CARBON AND HALOGEN DOPING FOR PMOS TRANSISTORS
- Publication number 20140017869
- Publication date Jan 16, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a CMOS Device with a Stressed-Channel NMOS Transi...
- Publication number 20140011340
- Publication date Jan 9, 2014
- Seung-Chul Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE
- Publication number 20130248949
- Publication date Sep 26, 2013
- TEXAS INSTRUMENTS INCORPORATED
- BRIAN K. KIRKPATRICK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DRAIN INDUCED BARRIER LOWERING WITH ANTI-PUNCH-THROUGH IMPLANT
- Publication number 20130161639
- Publication date Jun 27, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Himadri Sekhar PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD MISMATCH AND IDDQ REDUCTION USING SPLIT CARBON CO-IMPLANT...
- Publication number 20130095630
- Publication date Apr 18, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Ebenezer Eshun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
OFFSET SCREEN FOR SHALLOW SOURCE/DRAIN EXTENSION IMPLANTS, AND PROC...
- Publication number 20130009251
- Publication date Jan 10, 2013
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF SHALLOW JUNCTIONS BY DIFFUSION FROM A DIELECTRIC DOPED...
- Publication number 20110312168
- Publication date Dec 22, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON AND NITROGEN DOPING FOR SELECTED PMOS TRANSISTORS ON AN INTE...
- Publication number 20110147850
- Publication date Jun 23, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INDIUM, CARBON AND HALOGEN DOPING FOR PMOS TRANSISTORS
- Publication number 20110147854
- Publication date Jun 23, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING STRAINED CHANNEL PMOS DEVICES AND INTEGRATED CIR...
- Publication number 20110133287
- Publication date Jun 9, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN-ENGINEERED MOSFETS HAVING RIMMED SOURCE-DRAIN RECESSES
- Publication number 20110042753
- Publication date Feb 24, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR IMPROVED NICKEL SILICIDE
- Publication number 20110014768
- Publication date Jan 20, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh JAIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURVATURE REDUCTION FOR SEMICONDUCTOR WAFERS
- Publication number 20100261298
- Publication date Oct 14, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER PLANARITY CONTROL BETWEEN PATTERN LEVELS
- Publication number 20100261353
- Publication date Oct 14, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Steven L. Prins
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
CMOS Fabrication Process
- Publication number 20100133624
- Publication date Jun 3, 2010
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING STRAINED CHANNEL PMOS DEVICES AND INTEGRATED CIR...
- Publication number 20090184375
- Publication date Jul 23, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYSTEMS AND METHODS FOR FLASH ANNEALING OF SEMICONDUCTOR DEVICES
- Publication number 20090130864
- Publication date May 21, 2009
- Narendra Singh MEHTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS Fabrication Process
- Publication number 20090079008
- Publication date Mar 26, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Mahalingam Nandakumar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device Made by Using a Laser Anneal to Incorporate St...
- Publication number 20090065880
- Publication date Mar 12, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMATION OF SHALLOW JUNCTIONS BY DIFFUSION FROM A DIELECTRIC DOPED...
- Publication number 20090047768
- Publication date Feb 19, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Activation of CMOS Source/Drain Extensions by Ultra-High Temperatur...
- Publication number 20080318387
- Publication date Dec 25, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Amitabh Jain
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
P-DOPED REGION WITH IMPROVED ABRUPTNESS
- Publication number 20080308904
- Publication date Dec 18, 2008
- TEXAS INSTRUMENTS INCORPORATED
- P. R. Chidambaram
- H01 - BASIC ELECTRIC ELEMENTS

Amitabh Jain

Person

Patents Grantslast 30 patents

Integrated circuit having chemically modified spacer surface

Threshold mismatch and IDDQ reduction using split carbon co-implant...

Methods, apparatus and system for self-aligned retrograde well dopi...

Integrated circuit having chemically modified spacer surface

Integrated circuit having chemically modified spacer surface

Recessed channel insulated-gate field effect transistor with self-a...

Indium, carbon and halogen doping for PMOS transistors

Drain induced barrier lowering with anti-punch-through implant

ZTCR poly resistor in replacement gate flow

Strain-engineered MOSFETs having rimmed source-drain recesses

Recessed channel insulated-gate field effect transistor with self-a...

Carbon and nitrogen doping for selected PMOS transistors on an inte...

Offset screen for shallow source/drain extension implants, and proc...

Method of forming a CMOS device with a stressed-channel NMOS transi...

Carbon and nitrogen doping for selected PMOS transistor on an integ...

Formation of shallow junctions by diffusion from a dielectronic dop...

Indium, carbon and halogen doping for PMOS transistors

Method and system for improved nickel silicide

Curvature reduction for semiconductor wafers

Method for forming strained channel PMOS devices and integrated cir...

Wafer planarity control between pattern levels

Method of manufacturing a semiconductor device having reduced N/P o...

CMOS fabrication process

Formation of shallow junctions by diffusion from a dielectric doped...

Methodology of improving the manufacturability of laser anneal

Method for forming strained channel PMOS devices and integrated cir...

Method for preparing a source material for ion implantation

Method and system for improved nickel silicide

Antimony ion implantation for semiconductor components

Semiconductor device having a dislocation loop located within a bou...

Patents Applicationslast 30 patents

METHODS, APPARATUS AND SYSTEM FOR SELF-ALIGNED RETROGRADE WELL DOPI...

INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE

INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE

INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE

RECESSED CHANNEL INSULATED-GATE FIELD EFFECT TRANSISTOR WITH SELF-A...

ZTCR POLY RESISTOR IN REPLACEMENT GATE FLOW

Recessed Channel Insulated-Gate Field Effect Transistor with Self-A...

CARBON AND NITROGEN DOPING FOR SELECTED PMOS TRANSISTORS ON AN INTE...

INDIUM, CARBON AND HALOGEN DOPING FOR PMOS TRANSISTORS

Method of Forming a CMOS Device with a Stressed-Channel NMOS Transi...

INTEGRATED CIRCUIT HAVING CHEMICALLY MODIFIED SPACER SURFACE

DRAIN INDUCED BARRIER LOWERING WITH ANTI-PUNCH-THROUGH IMPLANT

THRESHOLD MISMATCH AND IDDQ REDUCTION USING SPLIT CARBON CO-IMPLANT...

OFFSET SCREEN FOR SHALLOW SOURCE/DRAIN EXTENSION IMPLANTS, AND PROC...

FORMATION OF SHALLOW JUNCTIONS BY DIFFUSION FROM A DIELECTRIC DOPED...

CARBON AND NITROGEN DOPING FOR SELECTED PMOS TRANSISTORS ON AN INTE...

INDIUM, CARBON AND HALOGEN DOPING FOR PMOS TRANSISTORS

METHOD FOR FORMING STRAINED CHANNEL PMOS DEVICES AND INTEGRATED CIR...

STRAIN-ENGINEERED MOSFETS HAVING RIMMED SOURCE-DRAIN RECESSES

METHOD AND SYSTEM FOR IMPROVED NICKEL SILICIDE

CURVATURE REDUCTION FOR SEMICONDUCTOR WAFERS

WAFER PLANARITY CONTROL BETWEEN PATTERN LEVELS

CMOS Fabrication Process

METHOD FOR FORMING STRAINED CHANNEL PMOS DEVICES AND INTEGRATED CIR...

SYSTEMS AND METHODS FOR FLASH ANNEALING OF SEMICONDUCTOR DEVICES

CMOS Fabrication Process

Semiconductor Device Made by Using a Laser Anneal to Incorporate St...

FORMATION OF SHALLOW JUNCTIONS BY DIFFUSION FROM A DIELECTRIC DOPED...

Activation of CMOS Source/Drain Extensions by Ultra-High Temperatur...

P-DOPED REGION WITH IMPROVED ABRUPTNESS