Andreas Hellmich

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Dresden, DE

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Patents Grantslast 30 patents

Information Patent Grant
Method of forming a gate mask for fabricating a structure of gate l...
- Patent number 9,514,942
- Issue date Dec 6, 2016
- GLOBALFOUNDRIES Inc.
- Elliot John Smith
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate electrodes of a semiconductor device formed by a hard mask and...
- Patent number 8,728,924
- Issue date May 20, 2014
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Maintaining integrity of a high-K gate stack by passivation using a...
- Patent number 8,524,591
- Issue date Sep 3, 2013
- GLOBALFOUNDRIES Inc.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming embedded strained drain/source regions based on...
- Patent number 7,381,622
- Issue date Jun 3, 2008
- Advanced Micro Devices, Inc.
- Andreas Hellmich
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Gate Electrodes of a Semiconductor Device Formed by a Hard Mask and...
- Publication number 20120049286
- Publication date Mar 1, 2012
- GLOBALFOUNDRIES INC.
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MAINTAINING INTEGRITY OF A HIGH-K GATE STACK BY PASSIVATION USING A...
- Publication number 20110049585
- Publication date Mar 3, 2011
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HAVING A STRAINED CHANNEL REGION CAUSED BY HYDROGEN-INDU...
- Publication number 20100025742
- Publication date Feb 4, 2010
- Sven Beyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR FORMING EMBEDDED STRAINED DRAIN/SOURCE REGIONS BASED ON...
- Publication number 20070232006
- Publication date Oct 4, 2007
- Andreas Hellmich
- H01 - BASIC ELECTRIC ELEMENTS