Andreas Knorr

Person

Austin, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor devices and methods of manufacture thereof
- Patent number 7,626,257
- Issue date Dec 1, 2009
- Infineon Technologies AG
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High density plasma oxidation
- Patent number 7,273,638
- Issue date Sep 25, 2007
- International Business Machines Corp.
- Michael Belyansky
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for treating a wafer edge
- Patent number 7,256,148
- Issue date Aug 14, 2007
- International Business Machines Corporation
- Bernd E. Kastenmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall sealing of porous dielectric materials
- Patent number 7,157,373
- Issue date Jan 2, 2007
- Infineon Technologies AG
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Air gaps between conductive lines for reduced RC delay of integrate...
- Patent number 7,125,782
- Issue date Oct 24, 2006
- Infineon Technologies AG
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
TEOS assisted oxide CMP process
- Patent number 7,091,103
- Issue date Aug 15, 2006
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned buried strap process using doped HDP oxide
- Patent number 6,946,345
- Issue date Sep 20, 2005
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation employing a high aspect ratio trench
- Patent number 6,933,206
- Issue date Aug 23, 2005
- Infineon Technologies AG
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
HDP process for high aspect ratio gap filling
- Patent number 6,914,015
- Issue date Jul 5, 2005
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation employing a doped oxide trench fill
- Patent number 6,890,833
- Issue date May 10, 2005
- Infineon Technologies AG
- Michael Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Deep isolation trenches
- Patent number 6,821,865
- Issue date Nov 23, 2004
- Infineon Technologies AG
- Michael Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extendible process for improved top oxide layer for DRAM array and...
- Patent number 6,794,242
- Issue date Sep 21, 2004
- Infineon Technologies AG
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Control of separation between transfer gate and storage node in ver...
- Patent number 6,706,634
- Issue date Mar 16, 2004
- Infineon Technologies AG
- Mihel Seitz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned buried strap process using doped HDP oxide
- Patent number 6,667,504
- Issue date Dec 23, 2003
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench isolation processes using polysilicon-assisted fill
- Patent number 6,566,228
- Issue date May 20, 2003
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for high aspect ratio gap fill using sequential HDP-CVD
- Patent number 6,531,377
- Issue date Mar 11, 2003
- Infineon Technologies AG
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure and method for improved isolation in trench storage cells
- Patent number 6,437,401
- Issue date Aug 20, 2002
- Infineon Technologies AG
- Jack A. Mandelman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming an integrated barrier/plug for a stacked capacitor
- Patent number 6,420,267
- Issue date Jul 16, 2002
- Infineon Technologies AG
- Chenting Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming and filling isolation trenches
- Patent number 6,294,423
- Issue date Sep 25, 2001
- Infineon Technologies North America Corp.
- Rajeev Malik
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extended trench for preventing interaction between components of st...
- Patent number 6,222,220
- Issue date Apr 24, 2001
- Siemens Aktiengesellschaft
- Chenting Lin
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD FOR TREATING A WAFER EDGE
- Publication number 20090004865
- Publication date Jan 1, 2009
- Bernd E. E. Kastenmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH DENSITY PLASMA OXIDATION
- Publication number 20070245957
- Publication date Oct 25, 2007
- International Business Machines Corporation
- Michael Belyansky
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
Semiconductor devices and methods of manufacture thereof
- Publication number 20070166997
- Publication date Jul 19, 2007
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR TREATING A WAFER EDGE
- Publication number 20060258177
- Publication date Nov 16, 2006
- International Business Machines Corporation
- Bernd E. Kastenmeier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Air gaps between conductive lines for reduced RC delay of integrate...
- Publication number 20060081830
- Publication date Apr 20, 2006
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Sidewall sealing of porous dielectric materials
- Publication number 20050127515
- Publication date Jun 16, 2005
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HDP PROCESS FOR HIGH ASPECT RATIO GAP FILLING
- Publication number 20050095872
- Publication date May 5, 2005
- International Business Machines Corporation
- Michael P. Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench isolation employing a high aspect ratio trench
- Publication number 20050079730
- Publication date Apr 14, 2005
- Infineon Technologies North America Corp.
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Extendible process for improved top oxide layer for DRAM array and...
- Publication number 20040256651
- Publication date Dec 23, 2004
- Infineon Technologies AG
- Thomas W. Dyer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench isolation employing a doped oxide trench fill
- Publication number 20040192009
- Publication date Sep 30, 2004
- Infineon Technologies North America Corp.
- Michael Belyansky
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-aligned buried strap process using doped HDP oxide
- Publication number 20040188740
- Publication date Sep 30, 2004
- International Business Machines Corp.
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High density plasma oxidation
- Publication number 20040129673
- Publication date Jul 8, 2004
- International Business Machines Corporation
- Michael Belyansky
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
IMPROVED DEEP ISOLATION TRENCHES
- Publication number 20040126986
- Publication date Jul 1, 2004
- Michael Wise
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEOS assisted oxide CMP process
- Publication number 20040110380
- Publication date Jun 10, 2004
- International Business Machines Corporation
- Jochen Beintner
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR HIGH ASPECT RATIO GAP FILL USING SEQUENTIAL HDP-CVD
- Publication number 20030013271
- Publication date Jan 16, 2003
- Infineon Technologies North America Corp.
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS

Andreas Knorr

Person

Patents Grantslast 30 patents

Semiconductor devices and methods of manufacture thereof

High density plasma oxidation

Method for treating a wafer edge

Sidewall sealing of porous dielectric materials

Air gaps between conductive lines for reduced RC delay of integrate...

TEOS assisted oxide CMP process

Self-aligned buried strap process using doped HDP oxide

Trench isolation employing a high aspect ratio trench

HDP process for high aspect ratio gap filling

Trench isolation employing a doped oxide trench fill

Deep isolation trenches

Extendible process for improved top oxide layer for DRAM array and...

Control of separation between transfer gate and storage node in ver...

Self-aligned buried strap process using doped HDP oxide

Trench isolation processes using polysilicon-assisted fill

Method for high aspect ratio gap fill using sequential HDP-CVD

Structure and method for improved isolation in trench storage cells

Method for forming an integrated barrier/plug for a stacked capacitor

Method for forming and filling isolation trenches

Extended trench for preventing interaction between components of st...

Patents Applicationslast 30 patents

METHOD FOR TREATING A WAFER EDGE

HIGH DENSITY PLASMA OXIDATION

Semiconductor devices and methods of manufacture thereof

METHOD FOR TREATING A WAFER EDGE

Air gaps between conductive lines for reduced RC delay of integrate...

Sidewall sealing of porous dielectric materials

HDP PROCESS FOR HIGH ASPECT RATIO GAP FILLING

Trench isolation employing a high aspect ratio trench

Extendible process for improved top oxide layer for DRAM array and...

Trench isolation employing a doped oxide trench fill

Self-aligned buried strap process using doped HDP oxide

High density plasma oxidation

IMPROVED DEEP ISOLATION TRENCHES

TEOS assisted oxide CMP process

METHOD FOR HIGH ASPECT RATIO GAP FILL USING SEQUENTIAL HDP-CVD