Andreas Knorr

Person

Wappingers Falls, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Lateral bipolar transistor
- Patent number 12,159,926
- Issue date Dec 3, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar junction transistor including a stress layer and me...
- Patent number 11,837,653
- Issue date Dec 5, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Lateral bipolar transistor
- Patent number 11,810,969
- Issue date Nov 7, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods, apparatus and system for a local interconnect feature over...
- Patent number 10,937,693
- Issue date Mar 2, 2021
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin-type field effect transistors with uniform channel lengths and...
- Patent number 10,644,157
- Issue date May 5, 2020
- GLOBALFOUNDRIES Inc.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate-all-around (GAA) FinFET and GAA FinFET forme...
- Patent number 10,475,899
- Issue date Nov 12, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-gate FinFET device
- Patent number 10,424,657
- Issue date Sep 24, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tall single-fin FIN-type field effect transistor structures and met...
- Patent number 10,411,010
- Issue date Sep 10, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with H-shaped or U-shaped channels and method for formi...
- Patent number 10,381,459
- Issue date Aug 13, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming complementary nano-sheet/wire transistor devices...
- Patent number 10,304,833
- Issue date May 28, 2019
- GLOBALFOUNDRIES Inc.
- Puneet Harischandra Suvarna
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit structure, gate all-around integrated circuit st...
- Patent number 10,290,549
- Issue date May 14, 2019
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate-all-around (GAA) FinFET and GAA FinFET forme...
- Patent number 10,164,041
- Issue date Dec 25, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for SRB elastic relaxation
- Patent number 10,062,617
- Issue date Aug 28, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tall single-fin fin-type field effect transistor structures and met...
- Patent number 9,929,157
- Issue date Mar 27, 2018
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a gate contact above an active region of a semic...
- Patent number 9,780,178
- Issue date Oct 3, 2017
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three-dimensional semiconductor transistor with gate contact in act...
- Patent number 9,691,897
- Issue date Jun 27, 2017
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming a tri-gate FinFET device
- Patent number 9,614,056
- Issue date Apr 4, 2017
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for SRB elastic relaxation
- Patent number 9,576,857
- Issue date Feb 21, 2017
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with dummy gate structures partially on isola...
- Patent number 9,496,354
- Issue date Nov 15, 2016
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit product comprising lateral and vertical FinFet d...
- Patent number 9,443,976
- Issue date Sep 13, 2016
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Interconnect structures and methods of fabrication
- Patent number 9,412,695
- Issue date Aug 9, 2016
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Confined early epitaxy with local interconnect capability
- Patent number 9,401,408
- Issue date Jul 26, 2016
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of removing fins for finfet semiconductor devices
- Patent number 9,318,342
- Issue date Apr 19, 2016
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structures and methods for forming isolation between...
- Patent number 9,257,325
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES, INC.
- Andreas Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming lateral and vertical FinFET devices and the resu...
- Patent number 9,245,885
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming replacement spacer structures on semiconductor d...
- Patent number 9,147,748
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming fins for FinFET semiconductor devices and select...
- Patent number 9,147,730
- Issue date Sep 29, 2015
- GLOBALFOUNDRIES Inc.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method to dynamically tune precision resistance
- Patent number 9,048,171
- Issue date Jun 2, 2015
- GLOBALFOUNDRIES Inc.
- Steven R. Soss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for forming and integrating metal gate transistors having se...
- Patent number 9,000,534
- Issue date Apr 7, 2015
- GLOBALFOUNDRIES Inc.
- Andreas H. Knorr
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned silicidation for replacement gate process
- Patent number 8,779,529
- Issue date Jul 15, 2014
- GLOBALFOUNDRIES, INC.
- Indradeep Sen
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20240021713
- Publication date Jan 18, 2024
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR TRANSISTOR
- Publication number 20230061219
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Haiting Wang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERAL BIPOLAR JUNCTION TRANSISTOR INCLUDING A STRESS LAYER AND ME...
- Publication number 20230065785
- Publication date Mar 2, 2023
- GLOBALFOUNDRIES U.S. Inc.
- Jagar Singh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS, APPARATUS AND SYSTEM FOR A LOCAL INTERCONNECT FEATURE OVER...
- Publication number 20200105597
- Publication date Apr 2, 2020
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN-TYPE FIELD EFFECT TRANSISTORS WITH UNIFORM CHANNEL LENGTHS AND...
- Publication number 20200044069
- Publication date Feb 6, 2020
- GLOBALFOUNDRIES INC.
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...
- Publication number 20190214482
- Publication date Jul 11, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING GATE-ALL-AROUND (GAA) FINFET AND GAA FINFET FORME...
- Publication number 20190123160
- Publication date Apr 25, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT STRUCTURE, GATE ALL-AROUND INTEGRATED CIRCUIT ST...
- Publication number 20190074224
- Publication date Mar 7, 2019
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TALL SINGLE-FIN FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURES AND MET...
- Publication number 20180182757
- Publication date Jun 28, 2018
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR SRB ELASTIC RELAXATION
- Publication number 20170256462
- Publication date Sep 7, 2017
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRI-GATE FINFET DEVICE
- Publication number 20170154977
- Publication date Jun 1, 2017
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL SEMICONDUCTOR TRANSISTOR WITH GATE CONTACT IN ACT...
- Publication number 20170092764
- Publication date Mar 30, 2017
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A GATE CONTACT ABOVE AN ACTIVE REGION OF A SEMIC...
- Publication number 20160359009
- Publication date Dec 8, 2016
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT PRODUCT COMPRISING LATERAL AND VERTICAL FINFET D...
- Publication number 20160293757
- Publication date Oct 6, 2016
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONFINED EARLY EPITAXY WITH LOCAL INTERCONNECT CAPABILITY
- Publication number 20160190262
- Publication date Jun 30, 2016
- GLOBALFOUNDRIES INC.
- Ruilong XIE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING A TRI-GATE FINFET DEVICE AND THE RESULTING DEVICE
- Publication number 20160118480
- Publication date Apr 28, 2016
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUAL-WIDTH FIN STRUCTURE FOR FINFETS DEVICES
- Publication number 20160027775
- Publication date Jan 28, 2016
- GLOBALFOUNDRIES INC.
- Murat Kerem AKARVARDAR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF REMOVING FINS FOR FINFET SEMICONDUCTOR DEVICES
- Publication number 20150340238
- Publication date Nov 26, 2015
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH REPLACEMENT SPACER STRUCTURES
- Publication number 20150333136
- Publication date Nov 19, 2015
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF FORMING FINS FOR FINFET SEMICONDUCTOR DEVICES AND SELECT...
- Publication number 20150249127
- Publication date Sep 3, 2015
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO DYNAMICALLY TUNE PRECISION RESISTANCE
- Publication number 20140203405
- Publication date Jul 24, 2014
- GLOBALFOUNDRIES INC.
- Steven R. SOSS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET HYBRID FULL METAL GATE WITH BORDERLESS CONTACTS
- Publication number 20140162447
- Publication date Jun 12, 2014
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of Forming Replacement Gate Structures for Semiconductor De...
- Publication number 20130187236
- Publication date Jul 25, 2013
- GLOBALFOUNDRIES INC.
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS
- Publication number 20130092957
- Publication date Apr 18, 2013
- GLOBALFOUNDRIES INC.
- Indradeep Sen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELF-ALIGNING A STOP LAYER TO A REPLACEMENT GATE FOR SEL...
- Publication number 20120068234
- Publication date Mar 22, 2012
- GLOBALFOUNDRIES INC.
- Steven R. Soss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS
- Publication number 20120018816
- Publication date Jan 26, 2012
- GLOBALFOUNDRIES INC.
- Indradeep Sen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUITS INCLUDING MULTI-GATE TRANSISTORS LOCALLY INTERC...
- Publication number 20110204419
- Publication date Aug 25, 2011
- GLOBALFOUNDRIES INC.
- Frank Scott JOHNSON
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD TO DYNAMICALLY TUNE PRECISION RESISTANCE
- Publication number 20110163417
- Publication date Jul 7, 2011
- GLOBALFOUNDRIES INC.
- Steven R. Soss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING ISOLATION BETWEEN...
- Publication number 20110068431
- Publication date Mar 24, 2011
- GLOBALFOUNDRIES INC.
- Andreas KNORR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR SELF-ALIGNING A STOP LAYER TO A REPLACEMENT GATE FOR SEL...
- Publication number 20110062501
- Publication date Mar 17, 2011
- GLOBALFOUNDRIES INC.
- Steven R. Soss
- H01 - BASIC ELECTRIC ELEMENTS

Andreas Knorr

Person

Patents Grantslast 30 patents

Lateral bipolar transistor

Lateral bipolar junction transistor including a stress layer and me...

Lateral bipolar transistor

Methods, apparatus and system for a local interconnect feature over...

Fin-type field effect transistors with uniform channel lengths and...

Method of forming gate-all-around (GAA) FinFET and GAA FinFET forme...

Tri-gate FinFET device

Tall single-fin FIN-type field effect transistor structures and met...

Transistors with H-shaped or U-shaped channels and method for formi...

Method of forming complementary nano-sheet/wire transistor devices...

Integrated circuit structure, gate all-around integrated circuit st...

Method of forming gate-all-around (GAA) FinFET and GAA FinFET forme...

Method and structure for SRB elastic relaxation

Tall single-fin fin-type field effect transistor structures and met...

Methods of forming a gate contact above an active region of a semic...

Three-dimensional semiconductor transistor with gate contact in act...

Methods of forming a tri-gate FinFET device

Method and structure for SRB elastic relaxation

Semiconductor devices with dummy gate structures partially on isola...

Integrated circuit product comprising lateral and vertical FinFet d...

Interconnect structures and methods of fabrication

Confined early epitaxy with local interconnect capability

Methods of removing fins for finfet semiconductor devices

Semiconductor structures and methods for forming isolation between...

Methods of forming lateral and vertical FinFET devices and the resu...

Methods of forming replacement spacer structures on semiconductor d...

Methods of forming fins for FinFET semiconductor devices and select...

Method to dynamically tune precision resistance

Method for forming and integrating metal gate transistors having se...

Self-aligned silicidation for replacement gate process

Patents Applicationslast 30 patents

LATERAL BIPOLAR TRANSISTOR

LATERAL BIPOLAR TRANSISTOR

LATERAL BIPOLAR JUNCTION TRANSISTOR INCLUDING A STRESS LAYER AND ME...

METHODS, APPARATUS AND SYSTEM FOR A LOCAL INTERCONNECT FEATURE OVER...

FIN-TYPE FIELD EFFECT TRANSISTORS WITH UNIFORM CHANNEL LENGTHS AND...

TRANSISTORS WITH H-SHAPED OR U-SHAPED CHANNELS AND METHOD FOR FORMI...

METHOD OF FORMING GATE-ALL-AROUND (GAA) FINFET AND GAA FINFET FORME...

INTEGRATED CIRCUIT STRUCTURE, GATE ALL-AROUND INTEGRATED CIRCUIT ST...

TALL SINGLE-FIN FIN-TYPE FIELD EFFECT TRANSISTOR STRUCTURES AND MET...

METHOD AND STRUCTURE FOR SRB ELASTIC RELAXATION

TRI-GATE FINFET DEVICE

THREE-DIMENSIONAL SEMICONDUCTOR TRANSISTOR WITH GATE CONTACT IN ACT...

METHODS OF FORMING A GATE CONTACT ABOVE AN ACTIVE REGION OF A SEMIC...

INTEGRATED CIRCUIT PRODUCT COMPRISING LATERAL AND VERTICAL FINFET D...

CONFINED EARLY EPITAXY WITH LOCAL INTERCONNECT CAPABILITY

METHODS OF FORMING A TRI-GATE FINFET DEVICE AND THE RESULTING DEVICE

DUAL-WIDTH FIN STRUCTURE FOR FINFETS DEVICES

METHODS OF REMOVING FINS FOR FINFET SEMICONDUCTOR DEVICES

SEMICONDUCTOR DEVICES WITH REPLACEMENT SPACER STRUCTURES

METHODS OF FORMING FINS FOR FINFET SEMICONDUCTOR DEVICES AND SELECT...

METHOD TO DYNAMICALLY TUNE PRECISION RESISTANCE

FINFET HYBRID FULL METAL GATE WITH BORDERLESS CONTACTS

Methods of Forming Replacement Gate Structures for Semiconductor De...

SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS

METHOD FOR SELF-ALIGNING A STOP LAYER TO A REPLACEMENT GATE FOR SEL...

SELF-ALIGNED SILICIDATION FOR REPLACEMENT GATE PROCESS

INTEGRATED CIRCUITS INCLUDING MULTI-GATE TRANSISTORS LOCALLY INTERC...

METHOD TO DYNAMICALLY TUNE PRECISION RESISTANCE

SEMICONDUCTOR STRUCTURES AND METHODS FOR FORMING ISOLATION BETWEEN...

METHOD FOR SELF-ALIGNING A STOP LAYER TO A REPLACEMENT GATE FOR SEL...