Andrei Mihaila

Person

Baden, CH

People

Patents Grantslast 30 patents

Information Patent Grant
Vertical silicon carbide power MOSFET and IGBT and a method of manu...
- Patent number 11,967,616
- Issue date Apr 23, 2024
- HITACHI ENERGY LTD
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned field plate mesa FPM SiC schottky barrier diode
- Patent number 11,888,037
- Issue date Jan 30, 2024
- HITACHI ENERGY LTD
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing such a semiconduc...
- Patent number 10,553,437
- Issue date Feb 4, 2020
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 10,516,022
- Issue date Dec 24, 2019
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing such a semiconduc...
- Patent number 10,361,082
- Issue date Jul 23, 2019
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier schottky diode with enhanced surge current capability
- Patent number 10,164,126
- Issue date Dec 25, 2018
- ABB Schweiz AG
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction barrier Schottky rectifier
- Patent number 9,659,927
- Issue date May 23, 2017
- ABB Schweiz AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20250006785
- Publication date Jan 2, 2025
- Hitachi Energy Ltd
- Gianpaolo ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20240186377
- Publication date Jun 6, 2024
- Hitachi Energy Ltd
- Yulieth Arango
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICON...
- Publication number 20240170566
- Publication date May 23, 2024
- Hitachi Energy Ltd
- Andrei MIHAILA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A POWER SEM...
- Publication number 20240055495
- Publication date Feb 15, 2024
- Hitachi Energy Switzerland AG
- Stephan WIRTHS
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR DEVICE
- Publication number 20230411514
- Publication date Dec 21, 2023
- Hitachi Energy Switzerland AG
- Gianpaolo ROMANO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Insulated Gate Structure, Wide Bandgap Material Power Device With t...
- Publication number 20230187525
- Publication date Jun 15, 2023
- Hitachi Energy Switzerland AG
- Lars Knoll
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
A Vertical Silicon Carbide Power MOSFET and IGBT and a Method of Ma...
- Publication number 20220028976
- Publication date Jan 27, 2022
- ABB Power Grids Switzerland AG
- Stephan Wirths
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Self-Aligned Field Plate Mesa FPM SiC Schottky Barrier Diode
- Publication number 20210020753
- Publication date Jan 21, 2021
- ABB Power Grids Switzerland AG
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUC...
- Publication number 20180350602
- Publication date Dec 6, 2018
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20180350943
- Publication date Dec 6, 2018
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUC...
- Publication number 20180286963
- Publication date Oct 4, 2018
- ABB Schweiz AG
- Holger Bartolf
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION BARRIER SCHOTTKY DIODE WITH ENHANCED SURGE CURRENT CAPABILITY
- Publication number 20180212071
- Publication date Jul 26, 2018
- ABB Schweiz AG
- Andrei Mihaila
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
POWER SEMICONDUCTOR RECTIFIER WITH CONTROLLABLE ON-STATE VOLTAGE
- Publication number 20160268448
- Publication date Sep 15, 2016
- ABB Technology AG
- Renato Minamisawa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Junction Barrier Schottky Rectifier
- Publication number 20160190126
- Publication date Jun 30, 2016
- ABB TECHNOLOGY AG
- Friedhelm Bauer
- H01 - BASIC ELECTRIC ELEMENTS

Andrei Mihaila

Person

Patents Grantslast 30 patents

Vertical silicon carbide power MOSFET and IGBT and a method of manu...

Self-aligned field plate mesa FPM SiC schottky barrier diode

Semiconductor device and method for manufacturing such a semiconduc...

Method for manufacturing a semiconductor device

Semiconductor device and method for manufacturing such a semiconduc...

Junction barrier schottky diode with enhanced surge current capability

Junction barrier Schottky rectifier

Patents Applicationslast 30 patents

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE

POWER SEMICONDUCTOR DEVICE AND METHOD FOR PRODUCING A POWER SEMICON...

POWER SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING A POWER SEM...

POWER SEMICONDUCTOR DEVICE

Insulated Gate Structure, Wide Bandgap Material Power Device With t...

A Vertical Silicon Carbide Power MOSFET and IGBT and a Method of Ma...

Self-Aligned Field Plate Mesa FPM SiC Schottky Barrier Diode

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUC...

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING SUCH A SEMICONDUC...

JUNCTION BARRIER SCHOTTKY DIODE WITH ENHANCED SURGE CURRENT CAPABILITY

POWER SEMICONDUCTOR RECTIFIER WITH CONTROLLABLE ON-STATE VOLTAGE

Junction Barrier Schottky Rectifier