Andrew A. Allerman

Person

Albuquerque, NM, US

People

Patents Grantslast 30 patents

Information Patent Grant
High voltage gallium nitride vertical PN diode
- Patent number 12,218,255
- Issue date Feb 4, 2025
- National Technology & Engineering Solutions of Sandia, LLC
- Luke Yates
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removing or preventing dry etch-induced damage in Al/In/GaN films b...
- Patent number 11,715,635
- Issue date Aug 1, 2023
- Morteza Monavarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Removing or preventing dry etch-induced damage in Al/In/GaN films b...
- Patent number 11,177,126
- Issue date Nov 16, 2021
- Morteza Monavarian
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth method for fabricating wide-bandgap transistors, and devic...
- Patent number 10,553,697
- Issue date Feb 4, 2020
- National Technology & Engineering Solutions of Sandia, LLC
- Andrew Armstrong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth method for fabricating wide-bandgap transistors, and devic...
- Patent number 10,388,753
- Issue date Aug 20, 2019
- National Technology & Engineering Solutions of Sandia, LLC
- Andrew Armstrong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method of making the same
- Patent number 9,917,149
- Issue date Mar 13, 2018
- National Technology & Engineering Solutions of Sandia, LLC
- Jeramy Ray Dickerson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical III-nitride thin-film power diode
- Patent number 9,595,616
- Issue date Mar 14, 2017
- Sandia Corporation
- Jonathan Wierer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective layer disordering in III-nitrides with a capping layer
- Patent number 9,368,677
- Issue date Jun 14, 2016
- Sandia Corporation
- Jonathan J. Wierer
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High extraction efficiency ultraviolet light-emitting diode
- Patent number 9,196,788
- Issue date Nov 24, 2015
- Sandia Corporation
- Jonathan Wierer
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Laterally injected light-emitting diode and laser diode
- Patent number 9,059,356
- Issue date Jun 16, 2015
- Sandia Corporation
- Mary A. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Impurity-induced disorder in III-nitride materials and devices
- Patent number 8,895,335
- Issue date Nov 25, 2014
- Sandia Corporation
- Jonathan J. Wierer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride transitional layer for reducing dislocation densit...
- Patent number 8,349,633
- Issue date Jan 8, 2013
- Sandia Corporation
- Andrew A. Allerman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Aluminum nitride transitional layer for reducing dislocation densit...
- Patent number 7,915,626
- Issue date Mar 29, 2011
- Sandia Corporation
- Andrew A. Allerman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Frequency-doubled vertical-external-cavity surface-emitting laser
- Patent number 6,393,038
- Issue date May 21, 2002
- Sandia Corporation
- Thomas D. Raymond
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Embedded high-contrast distributed grating structures
- Patent number 6,365,428
- Issue date Apr 2, 2002
- Sandia Corporation
- Walter J. Zubrzycki
- G02 - OPTICS
Information Patent Grant
InGaAsN/GaAs heterojunction for multi-junction solar cells
- Patent number 6,252,287
- Issue date Jun 26, 2001
- Sandia Corporation
- Steven R. Kurtz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High gain photoconductive semiconductor switch having tailored dopi...
- Patent number 6,248,992
- Issue date Jun 19, 2001
- Sandia Corporation
- Albert G. Baca
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making AlInSb by metal-organic chemical vapor deposition
- Patent number 6,071,109
- Issue date Jun 6, 2000
- Sandia Corporation
- Robert M. Biefeld
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Infrared light sources with semimetal electron injection
- Patent number 5,995,529
- Issue date Nov 30, 1999
- Sandia Corporation
- Steven R. Kurtz
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
High Voltage Gallium Nitride Vertical PN Diode
- Publication number 20220165888
- Publication date May 26, 2022
- National Technology & Engineering Solutions of Sandia, LLC
- Luke Yates
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...
- Publication number 20220068632
- Publication date Mar 3, 2022
- UNM Rainforest Innovations
- Morteza MONAVARIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...
- Publication number 20200161126
- Publication date May 21, 2020
- STC.UNM
- Morteza MONAVARIAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Laterally-Injected Light-Emitting Diode and Laser Diode
- Publication number 20150144871
- Publication date May 28, 2015
- SANDIA CORPORATION
- Mary A. Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Selective Layer Disordering in III-Nitrides with a Capping Layer
- Publication number 20150079770
- Publication date Mar 19, 2015
- SANDIA CORPORATION
- Jonathan J. Wierer
- B82 - NANO-TECHNOLOGY

Andrew A. Allerman

Person

Patents Grantslast 30 patents

High voltage gallium nitride vertical PN diode

Removing or preventing dry etch-induced damage in Al/In/GaN films b...

Removing or preventing dry etch-induced damage in Al/In/GaN films b...

Regrowth method for fabricating wide-bandgap transistors, and devic...

Regrowth method for fabricating wide-bandgap transistors, and devic...

Diode and method of making the same

Vertical III-nitride thin-film power diode

Selective layer disordering in III-nitrides with a capping layer

High extraction efficiency ultraviolet light-emitting diode

Laterally injected light-emitting diode and laser diode

Impurity-induced disorder in III-nitride materials and devices

Aluminum nitride transitional layer for reducing dislocation densit...

Aluminum nitride transitional layer for reducing dislocation densit...

Frequency-doubled vertical-external-cavity surface-emitting laser

Embedded high-contrast distributed grating structures

InGaAsN/GaAs heterojunction for multi-junction solar cells

High gain photoconductive semiconductor switch having tailored dopi...

Method of making AlInSb by metal-organic chemical vapor deposition

Infrared light sources with semimetal electron injection

Patents Applicationslast 30 patents

High Voltage Gallium Nitride Vertical PN Diode

REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...

REMOVING OR PREVENTING DRY ETCH-INDUCED DAMAGE IN Al/In/GaN FILMS B...

Laterally-Injected Light-Emitting Diode and Laser Diode

Selective Layer Disordering in III-Nitrides with a Capping Layer