Andrew Gaul

Person

Halfmoon, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Spin-based gate-all-around transistors
- Patent number 12,324,197
- Issue date Jun 3, 2025
- International Business Machines Corporation
- Julien Frougier
Information Patent Grant
Stacked planar field effect transistors with 2D material channels
- Patent number 12,249,643
- Issue date Mar 11, 2025
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having two-dimensional channel
- Patent number 12,136,656
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around-contact for 2D-channel gate-all-around field-effect-tra...
- Patent number 11,935,930
- Issue date Mar 19, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate N/P boundary control by active gate cut and recess
- Patent number 11,742,350
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integration of gate-all-around FET, FINFET and passive devices o...
- Patent number 11,646,306
- Issue date May 9, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
AIRGAP SPACER WITH BACKSIDE POWER DELIVERY
- Publication number 20250221002
- Publication date Jul 3, 2025
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE
- Publication number 20240339509
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...
- Publication number 20240290860
- Publication date Aug 29, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE STACK FORMATION
- Publication number 20240234516
- Publication date Jul 11, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS
- Publication number 20240213315
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION
- Publication number 20240204079
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SPIN-BASED GATE-ALL-AROUND TRANSISTORS
- Publication number 20240145584
- Publication date May 2, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Nanosheets with Bottom Dielectric Isolation and Idea...
- Publication number 20240072041
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSH...
- Publication number 20230178587
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND-CONTACT FOR 2D-CHANNEL GATE-ALL-AROUND FIELD-EFFECT-TRA...
- Publication number 20230170396
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Julien FROUGIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAP-AROUND-CONTACT FOR 2D-CHANNEL GATE-ALL-AROUND FIELD-EFFECT-TRA...
- Publication number 20230170394
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Julien FROUGIER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REDUCED PARASITIC RESISTANCE TWO-DIMENSIONAL MATERIAL FIELD-EFFECT...
- Publication number 20230163203
- Publication date May 25, 2023
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT SUBSEQUENT TO REPLACEMENT GATE
- Publication number 20230143317
- Publication date May 11, 2023
- International Business Machines Corporation
- CHANRO PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE HAVING TWO-DIMENSIONAL CHANNEL
- Publication number 20230105783
- Publication date Apr 6, 2023
- International Business Machines Corporation
- ANDREW GAUL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED PLANAR FIELD EFFECT TRANSISTORS WITH 2D MATERIAL CHANNELS
- Publication number 20230093343
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL GATE N/P BOUNDARY CONTROL BY ACTIVE GATE CUT AND RECESS
- Publication number 20230086785
- Publication date Mar 23, 2023
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF GATE-ALL-AROUND FET, FINFET AND PASSIVE DEVICES O...
- Publication number 20220310590
- Publication date Sep 29, 2022
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS

Andrew Gaul

Person

Patents Grantslast 30 patents

Spin-based gate-all-around transistors

Stacked planar field effect transistors with 2D material channels

Semiconductor structure having two-dimensional channel

Wrap-around-contact for 2D-channel gate-all-around field-effect-tra...

Metal gate N/P boundary control by active gate cut and recess

Co-integration of gate-all-around FET, FINFET and passive devices o...

Patents Applicationslast 30 patents

AIRGAP SPACER WITH BACKSIDE POWER DELIVERY

FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE

SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...

TRANSISTOR GATE STACK FORMATION

GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS

SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION

SPIN-BASED GATE-ALL-AROUND TRANSISTORS

Integration of Nanosheets with Bottom Dielectric Isolation and Idea...

HIGH-DENSITY METAL-INSULATOR-METAL CAPACITOR INTEGRATION WTH NANOSH...

WRAP-AROUND-CONTACT FOR 2D-CHANNEL GATE-ALL-AROUND FIELD-EFFECT-TRA...

WRAP-AROUND-CONTACT FOR 2D-CHANNEL GATE-ALL-AROUND FIELD-EFFECT-TRA...

REDUCED PARASITIC RESISTANCE TWO-DIMENSIONAL MATERIAL FIELD-EFFECT...

GATE CUT SUBSEQUENT TO REPLACEMENT GATE

SEMICONDUCTOR STRUCTURE HAVING TWO-DIMENSIONAL CHANNEL

STACKED PLANAR FIELD EFFECT TRANSISTORS WITH 2D MATERIAL CHANNELS

METAL GATE N/P BOUNDARY CONTROL BY ACTIVE GATE CUT AND RECESS

CO-INTEGRATION OF GATE-ALL-AROUND FET, FINFET AND PASSIVE DEVICES O...