Andrew M. Greene

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Wrap-around contact for nanosheet device
- Patent number 12,176,404
- Issue date Dec 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure having two-dimensional channel
- Patent number 12,136,656
- Issue date Nov 5, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around field effect transistor with bottom dielectric isol...
- Patent number 12,100,746
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap around contact process margin improvement with early contact cut
- Patent number 12,100,744
- Issue date Sep 24, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 12,074,165
- Issue date Aug 27, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal cut patterning and etching to minimize interlayer dielectric...
- Patent number 11,990,342
- Issue date May 21, 2024
- International Business Machines Corporation
- Kisup Chung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual step etch-back inner spacer formation
- Patent number 11,990,508
- Issue date May 21, 2024
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor with enhanced bottom isolation
- Patent number 11,942,557
- Issue date Mar 26, 2024
- International Business Machines Corporation
- Lan Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Planar devices with consistent base dielectric
- Patent number 11,908,743
- Issue date Feb 20, 2024
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Co-integrated logic, electrostatic discharge, and well contact devi...
- Patent number 11,894,361
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around monolithic stacked field effect transistors having...
- Patent number 11,894,436
- Issue date Feb 6, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having wrap-around source/drain contacts and under-conta...
- Patent number 11,876,136
- Issue date Jan 16, 2024
- International Business Machine Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 11,776,957
- Issue date Oct 3, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Source and drain contact cut last process to enable wrap-around-con...
- Patent number 11,757,012
- Issue date Sep 12, 2023
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Metal gate N/P boundary control by active gate cut and recess
- Patent number 11,742,350
- Issue date Aug 29, 2023
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid diffusion break with EUV gate patterning
- Patent number 11,710,768
- Issue date Jul 25, 2023
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Protective bilayer inner spacer for nanosheet devices
- Patent number 11,695,057
- Issue date Jul 4, 2023
- International Business Machines Corporation
- Yao Yao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with linerless contacts
- Patent number 11,688,632
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Alex Joseph Varghese
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate-all-around devices with isolated and non-isolated epitaxy regi...
- Patent number 11,688,741
- Issue date Jun 27, 2023
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate cut with integrated etch stop layer
- Patent number 11,552,077
- Issue date Jan 10, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of trench silicide source or drain contacts without gate...
- Patent number 11,443,982
- Issue date Sep 13, 2022
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap-around contacts including localized metal silicide
- Patent number 11,424,367
- Issue date Aug 23, 2022
- International Business Machines Corporation
- Eric Miller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanosheet transistor device with bottom isolation
- Patent number 11,387,319
- Issue date Jul 12, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin cut to prevent replacement gate collapse on STI
- Patent number 11,315,922
- Issue date Apr 26, 2022
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single metallization scheme for gate, source, and drain contact int...
- Patent number 11,309,221
- Issue date Apr 19, 2022
- International Business Machines Corporation
- Andrew Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor having wrap-around source/drain contacts and under-conta...
- Patent number 11,296,226
- Issue date Apr 5, 2022
- International Business Machines Corporation
- Yi Song
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Enhanced bottom dielectric isolation in gate-all-around devices
- Patent number 11,282,961
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Threshold voltage adjustment from oxygen vacancy by scavenge metal...
- Patent number 11,282,962
- Issue date Mar 22, 2022
- International Business Machines Corporation
- Huimei Zhou
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Additive core subtractive liner for metal cut etch processes
- Patent number 11,276,767
- Issue date Mar 15, 2022
- International Business Machines Corporation
- Ruqiang Bao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wrap around contact process margin improvement with early contact cut
- Patent number 11,227,923
- Issue date Jan 18, 2022
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE
- Publication number 20240339509
- Publication date Oct 10, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...
- Publication number 20240290860
- Publication date Aug 29, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NONLINEAR CHANNEL
- Publication number 20240282860
- Publication date Aug 22, 2024
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT WITH INTEGRATED ETCH STOP LAYER
- Publication number 20240222373
- Publication date Jul 4, 2024
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS
- Publication number 20240213315
- Publication date Jun 27, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION
- Publication number 20240204079
- Publication date Jun 20, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL
- Publication number 20240170538
- Publication date May 23, 2024
- International Business Machines Corporation
- Liqiao Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS
- Publication number 20240128346
- Publication date Apr 18, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL
- Publication number 20240113192
- Publication date Apr 4, 2024
- International Business Machines Corporation
- Shogo Mochizuki
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE
- Publication number 20240113213
- Publication date Apr 4, 2024
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION
- Publication number 20240113200
- Publication date Apr 4, 2024
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS
- Publication number 20240088252
- Publication date Mar 14, 2024
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Nanosheets with Bottom Dielectric Isolation and Idea...
- Publication number 20240072041
- Publication date Feb 29, 2024
- International Business Machines Corporation
- Andrew Gaul
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...
- Publication number 20240006467
- Publication date Jan 4, 2024
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...
- Publication number 20230420457
- Publication date Dec 28, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMING LOW CONTACT RESISTANCE COMPLEMENTA...
- Publication number 20230387238
- Publication date Nov 30, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED DIELECTRIC ISOLATION STRUCTURE FOR NANOSHEET
- Publication number 20230369394
- Publication date Nov 16, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CUT WITH INTEGRATED ETCH STOP LAYER
- Publication number 20230282641
- Publication date Sep 7, 2023
- TESSERA LLC
- Marc A. Bergendahl
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATION OF SOURCE-DRAIN TRENCH METAL CUT AND GATE-CONTACT-OV...
- Publication number 20230282722
- Publication date Sep 7, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT RESISTANCE
- Publication number 20230197530
- Publication date Jun 22, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL IN...
- Publication number 20230187516
- Publication date Jun 15, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION
- Publication number 20230178617
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVI...
- Publication number 20230178539
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL
- Publication number 20230178621
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING...
- Publication number 20230178620
- Publication date Jun 8, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PHYSICAL UNCLONABLE FUNCTION LEVERAGING STOCHASTIC VARIATIONS OF PA...
- Publication number 20230171114
- Publication date Jun 1, 2023
- International Business Machines Corporation
- Dallas Lea
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
GATE CUT SUBSEQUENT TO REPLACEMENT GATE
- Publication number 20230143317
- Publication date May 11, 2023
- International Business Machines Corporation
- CHANRO PARK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND FIELD EFFECT TRANSISTOR WITH BOTTOM DIELECTRIC ISOL...
- Publication number 20230133545
- Publication date May 4, 2023
- International Business Machines Corporation
- Julien Frougier
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESSED MATERIAL WITHIN GATE CUT REGION
- Publication number 20230139399
- Publication date May 4, 2023
- International Business Machines Corporation
- HUIMEI ZHOU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES
- Publication number 20230103437
- Publication date Apr 6, 2023
- International Business Machines Corporation
- Ruilong Xie
- H01 - BASIC ELECTRIC ELEMENTS

Andrew M. Greene

Person

Patents Grantslast 30 patents

Wrap-around contact for nanosheet device

Semiconductor structure having two-dimensional channel

Gate-all-around field effect transistor with bottom dielectric isol...

Wrap around contact process margin improvement with early contact cut

Gate cut with integrated etch stop layer

Metal cut patterning and etching to minimize interlayer dielectric...

Dual step etch-back inner spacer formation

Nanosheet transistor with enhanced bottom isolation

Planar devices with consistent base dielectric

Co-integrated logic, electrostatic discharge, and well contact devi...

Gate-all-around monolithic stacked field effect transistors having...

Transistor having wrap-around source/drain contacts and under-conta...

Gate cut with integrated etch stop layer

Source and drain contact cut last process to enable wrap-around-con...

Metal gate N/P boundary control by active gate cut and recess

Hybrid diffusion break with EUV gate patterning

Protective bilayer inner spacer for nanosheet devices

Semiconductor device with linerless contacts

Gate-all-around devices with isolated and non-isolated epitaxy regi...

Gate cut with integrated etch stop layer

Formation of trench silicide source or drain contacts without gate...

Wrap-around contacts including localized metal silicide

Nanosheet transistor device with bottom isolation

Fin cut to prevent replacement gate collapse on STI

Single metallization scheme for gate, source, and drain contact int...

Transistor having wrap-around source/drain contacts and under-conta...

Enhanced bottom dielectric isolation in gate-all-around devices

Threshold voltage adjustment from oxygen vacancy by scavenge metal...

Additive core subtractive liner for metal cut etch processes

Wrap around contact process margin improvement with early contact cut

Patents Applicationslast 30 patents

FORMING SOURCE/DRAIN CONTACT IN A TIGHT TIP-TO-TIP SPACE

SELF-ALIGNED SUBSTRATE ISOLATION (SASI) OF GATE-ALL-AROUND NANOSHEE...

NONLINEAR CHANNEL

GATE CUT WITH INTEGRATED ETCH STOP LAYER

GATE-ALL-AROUND TRANSISTORS WITH CLADDED SOURCE/DRAIN REGIONS

SELF-ALIGNED GATE METAL WITH TOP-DIELECTRIC ISOLATION

SEMICONDUCTOR STRUCTURE WITH STRAINED NANOSHEET CHANNEL

GATE-ALL-AROUND TRANSISTORS WITH DUAL PFET AND NFET CHANNELS

FORMING GATE ALL AROUND DEVICE WITH SILICON-GERMANIUM CHANNEL

HYBRID INSERTED DIELECRIC GATE-ALL-AROUND DEVICE

INNER SPACER RELIABILITY MACRO DESIGN AND WELL CONTACT FORMATION

GATE ALL AROUND TRANSISTORS WITH HETEROGENEOUS CHANNELS

Integration of Nanosheets with Bottom Dielectric Isolation and Idea...

CO-INTEGRATION OF GATE-ALL-AROUND NANOSHEET LOGIC DEVICE AND PRECIS...

SINGLE STACK DUAL CHANNEL GATE-ALL-AROUND NANOSHEET WITH STRAINED P...

METHOD AND STRUCTURE FOR FORMING LOW CONTACT RESISTANCE COMPLEMENTA...

SELF-ALIGNED DIELECTRIC ISOLATION STRUCTURE FOR NANOSHEET

GATE CUT WITH INTEGRATED ETCH STOP LAYER

CO-INTEGRATION OF SOURCE-DRAIN TRENCH METAL CUT AND GATE-CONTACT-OV...

SEMICONDUCTOR DEVICE HAVING REDUCED CONTACT RESISTANCE

GATE-ALL-AROUND FIELD-EFFECT-TRANSISTOR WITH WRAP-AROUND-CHANNEL IN...

NANOSHEET EPITAXY WITH FULL BOTTOM ISOLATION

CO-INTEGRATED LOGIC, ELECTROSTATIC DISCHARGE, AND WELL CONTACT DEVI...

WRAPAROUND CONTACT WITH REDUCED DISTANCE TO CHANNEL

GATE-ALL-AROUND MONOLITHIC STACKED FIELD EFFECT TRANSISTORS HAVING...

PHYSICAL UNCLONABLE FUNCTION LEVERAGING STOCHASTIC VARIATIONS OF PA...

GATE CUT SUBSEQUENT TO REPLACEMENT GATE

GATE-ALL-AROUND FIELD EFFECT TRANSISTOR WITH BOTTOM DIELECTRIC ISOL...

STRESSED MATERIAL WITHIN GATE CUT REGION

LATE REPLACEMENT BOTTOM ISOLATION FOR NANOSHEET DEVICES