Aniruddha Konar

Person

Bangalore, IN

People

Patents Grantslast 30 patents

Information Patent Grant
Symmetric tunnel field effect transistor
- Patent number 10,163,716
- Issue date Dec 25, 2018
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric tunnel field effect transistor
- Patent number 10,164,027
- Issue date Dec 25, 2018
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric tunnel field effect transistor
- Patent number 9,911,598
- Issue date Mar 6, 2018
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric tunnel field effect transistor
- Patent number 9,876,084
- Issue date Jan 23, 2018
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable voltage margin access diodes
- Patent number 9,705,079
- Issue date Jul 11, 2017
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable voltage margin access diodes
- Patent number 9,680,096
- Issue date Jun 13, 2017
- International Business Machines Corporation
- Mohit Bajaj
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Tunable voltage margin access diodes
- Patent number 9,647,210
- Issue date May 9, 2017
- International Business Machines Corporation
- Mohit Bajaj
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Symmetric tunnel field effect transistor
- Patent number 9,613,867
- Issue date Apr 4, 2017
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tunable voltage margin access diodes
- Patent number 9,508,930
- Issue date Nov 29, 2016
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junctionless tunnel FET with metal-insulator transition material
- Patent number 9,419,016
- Issue date Aug 16, 2016
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junctionless tunnel fet with metal-insulator transition material
- Patent number 9,419,115
- Issue date Aug 16, 2016
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Symmetric tunnel field effect transistor
- Patent number 9,379,253
- Issue date Jun 28, 2016
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR
- Publication number 20180130655
- Publication date May 10, 2018
- International Business Machines Corporation
- Mohit BAJAJ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR
- Publication number 20180053828
- Publication date Feb 22, 2018
- International Business Machines Corporation
- Mohit BAJAJ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR
- Publication number 20170194467
- Publication date Jul 6, 2017
- International Business Machines Corporation
- Mohit BAJAJ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR
- Publication number 20170062594
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Mohit BAJAJ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR
- Publication number 20170062234
- Publication date Mar 2, 2017
- International Business Machines Corporation
- Mohit BAJAJ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE VOLTAGE MARGIN ACCESS DIODES
- Publication number 20170047515
- Publication date Feb 16, 2017
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE VOLTAGE MARGIN ACCESS DIODES
- Publication number 20160315254
- Publication date Oct 27, 2016
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE VOLTAGE MARGIN ACCESS DIODES
- Publication number 20160284995
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TUNABLE VOLTAGE MARGIN ACCESS DIODES
- Publication number 20160284870
- Publication date Sep 29, 2016
- International Business Machines Corporation
- Mohit Bajaj
- B82 - NANO-TECHNOLOGY
Information Patent Application
JUNCTIONLESS TUNNEL FET WITH METAL-INSULATOR TRANSITION MATERIAL
- Publication number 20160133648
- Publication date May 12, 2016
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTIONLESS TUNNEL FET WITH METAL-INSULATOR TRANSITION MATERIAL
- Publication number 20160133730
- Publication date May 12, 2016
- International Business Machines Corporation
- Mohit Bajaj
- H01 - BASIC ELECTRIC ELEMENTS

Aniruddha Konar

Person

Patents Grantslast 30 patents

Symmetric tunnel field effect transistor

Symmetric tunnel field effect transistor

Symmetric tunnel field effect transistor

Symmetric tunnel field effect transistor

Tunable voltage margin access diodes

Tunable voltage margin access diodes

Tunable voltage margin access diodes

Symmetric tunnel field effect transistor

Tunable voltage margin access diodes

Junctionless tunnel FET with metal-insulator transition material

Junctionless tunnel fet with metal-insulator transition material

Symmetric tunnel field effect transistor

Patents Applicationslast 30 patents

SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR

SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR

SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR

SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR

SYMMETRIC TUNNEL FIELD EFFECT TRANSISTOR

TUNABLE VOLTAGE MARGIN ACCESS DIODES

TUNABLE VOLTAGE MARGIN ACCESS DIODES

TUNABLE VOLTAGE MARGIN ACCESS DIODES

TUNABLE VOLTAGE MARGIN ACCESS DIODES

JUNCTIONLESS TUNNEL FET WITH METAL-INSULATOR TRANSITION MATERIAL

JUNCTIONLESS TUNNEL FET WITH METAL-INSULATOR TRANSITION MATERIAL