Annalisa CAPPELLANI

Person

Portland, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 12,142,634
- Issue date Nov 12, 2024
- Sony Group Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 12,125,916
- Issue date Oct 22, 2024
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 11,552,197
- Issue date Jan 10, 2023
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate contact structure over active gate and method to fabricate same
- Patent number 11,004,739
- Issue date May 11, 2021
- Intel Corporation
- Abhijit Jayant Pethe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 10,991,799
- Issue date Apr 27, 2021
- Sony Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around (GAA) transistors with nanowires on an isolation pe...
- Patent number 10,847,631
- Issue date Nov 24, 2020
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 10,847,653
- Issue date Nov 24, 2020
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 10,636,871
- Issue date Apr 28, 2020
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 10,580,899
- Issue date Mar 3, 2020
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor devices having modulated nanowire counts
- Patent number 10,424,580
- Issue date Sep 24, 2019
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate-all-around (GAA) transistor with stacked nanowires on locally...
- Patent number 10,229,981
- Issue date Mar 12, 2019
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Gate contact structure over active gate and method to fabricate same
- Patent number 10,192,783
- Issue date Jan 29, 2019
- Intel Corporation
- Abhijit Jayant Pethe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS nanowire structure
- Patent number 10,074,573
- Issue date Sep 11, 2018
- Intel Corporation
- Seiyon Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device with isolated body portion
- Patent number 10,026,829
- Issue date Jul 17, 2018
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Isolated and bulk semiconductor devices formed on a same bulk subst...
- Patent number 9,978,636
- Issue date May 22, 2018
- Intel Corporation
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniaxially strained nanowire structure
- Patent number 9,905,650
- Issue date Feb 27, 2018
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Common-substrate semiconductor devices having nanowires or semicond...
- Patent number 9,691,843
- Issue date Jun 27, 2017
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Conversion of strain-inducing buffer to electrical insulator
- Patent number 9,673,302
- Issue date Jun 6, 2017
- Intel Corporation
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with isolated body portion
- Patent number 9,608,059
- Issue date Mar 28, 2017
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon and silicon germanium nanowire structures
- Patent number 9,595,581
- Issue date Mar 14, 2017
- Intel Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Grant
CMOS nanowire structure
- Patent number 9,583,491
- Issue date Feb 28, 2017
- Intel Corporation
- Seiyon Kim
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semiconductor device having metallic source and drain regions
- Patent number 9,583,487
- Issue date Feb 28, 2017
- Intel Corporation
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nanowire structures having non-discrete source and drain regions
- Patent number 9,564,522
- Issue date Feb 7, 2017
- Intel Corporation
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Common-substrate semiconductor devices having nanowires or semicond...
- Patent number 9,559,160
- Issue date Jan 31, 2017
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Uniaxially strained nanowire structure
- Patent number 9,490,320
- Issue date Nov 8, 2016
- Intel Corporation
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for fabricating strained gate-all-around semiconductor devi...
- Patent number 9,484,272
- Issue date Nov 1, 2016
- Intel Corporation
- Annalisa Cappellani
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Three-dimensional germanium-based semiconductor devices formed on g...
- Patent number 9,472,399
- Issue date Oct 18, 2016
- Intel Corporation
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Conversion of strain-inducing buffer to electrical insulator
- Patent number 9,472,613
- Issue date Oct 18, 2016
- Intel Corporation
- Annalisa Cappellani
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Gate contact structure over active gate and method to fabricate same
- Patent number 9,461,143
- Issue date Oct 4, 2016
- Intel Corporation
- Abhijit Jayant Pethe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Isolated and bulk semiconductor devices formed on a same bulk subst...
- Patent number 9,425,212
- Issue date Aug 23, 2016
- Intel Corporation
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Nanowire Structures Having Non-Discrete Source and Drain Regions
- Publication number 20230111689
- Publication date Apr 13, 2023
- Google LLC
- Stephen M. Cea
- B82 - NANO-TECHNOLOGY
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20210226006
- Publication date Jul 22, 2021
- Sony Corporation
- Kelin J. Kuhn
- B82 - NANO-TECHNOLOGY
Information Patent Application
GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME
- Publication number 20210210385
- Publication date Jul 8, 2021
- Intel Corporation
- Abhijit Jayant PETHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20200227520
- Publication date Jul 16, 2020
- Intel Corporation
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS
- Publication number 20200152797
- Publication date May 14, 2020
- Intel Corporation
- Stephen M. CEA
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY O...
- Publication number 20190157411
- Publication date May 23, 2019
- Intel Corporation
- Annalisa CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME
- Publication number 20190115257
- Publication date Apr 18, 2019
- Intel Corporation
- Abhijit Jayant PETHE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION
- Publication number 20170162676
- Publication date Jun 8, 2017
- Intel Corporation
- Annalisa CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS
- Publication number 20170141239
- Publication date May 18, 2017
- Stephen M. CEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS NANOWIRE STRUCTURE
- Publication number 20170133277
- Publication date May 11, 2017
- Seiyon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20170133462
- Publication date May 11, 2017
- Intel Corporation
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS
- Publication number 20170125591
- Publication date May 4, 2017
- Martin D. Giles
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY O...
- Publication number 20170047416
- Publication date Feb 16, 2017
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIAXIALLY STRAINED NANOWIRE STRUCTURE
- Publication number 20170047405
- Publication date Feb 16, 2017
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR
- Publication number 20170040438
- Publication date Feb 9, 2017
- Intel Corporation
- ANNALISA CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL GERMANIUM-BASED SEMICONDUCTOR DEVICES FORMED ON G...
- Publication number 20170025499
- Publication date Jan 26, 2017
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME
- Publication number 20170004998
- Publication date Jan 5, 2017
- Abhijit Jayant Pethe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATED AND BULK SEMICONDUCTOR DEVICES FORMED ON A SAME BULK SUBST...
- Publication number 20160336219
- Publication date Nov 17, 2016
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Fabricating Strained Gate-All-Around Semiconductor Devi...
- Publication number 20160284605
- Publication date Sep 29, 2016
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
COMMON-SUBSTRATE SEMICONDUCTOR DEVICES HAVING NANOWIRES OR SEMICOND...
- Publication number 20160133735
- Publication date May 12, 2016
- Annalisa CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS NANOWIRE STRUCTURE
- Publication number 20160086951
- Publication date Mar 24, 2016
- Seiyon Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIAXIALLY STRAINED NANOWIRE STRUCTURE
- Publication number 20160079360
- Publication date Mar 17, 2016
- Stephen M. Cea
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR
- Publication number 20150380481
- Publication date Dec 31, 2015
- Intel Corporation
- ANNALISA CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS
- Publication number 20150325648
- Publication date Nov 12, 2015
- Stephen M. CEA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY O...
- Publication number 20150318219
- Publication date Nov 5, 2015
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20150303258
- Publication date Oct 22, 2015
- Intel Corporation
- Kelin J. KUHN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THREE-DIMENSIONAL GERMANIUM-BASED SEMICONDUCTOR DEVICES FORMED ON G...
- Publication number 20150255280
- Publication date Sep 10, 2015
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTIONLESS ACCUMULATION-MODE DEVICE ISOLATED FROM SEMICONDUCTIVE...
- Publication number 20150021553
- Publication date Jan 22, 2015
- Intel Corporation
- ANNALISA CAPPELLANI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES
- Publication number 20140326952
- Publication date Nov 6, 2014
- Kelin J. KUHN
- B82 - NANO-TECHNOLOGY
Information Patent Application
CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR
- Publication number 20140285980
- Publication date Sep 25, 2014
- Annalisa Cappellani
- H01 - BASIC ELECTRIC ELEMENTS

Annalisa CAPPELLANI

Person

Patents Grantslast 30 patents

Silicon and silicon germanium nanowire structures

Nanowire structures having non-discrete source and drain regions

Nanowire structures having non-discrete source and drain regions

Gate contact structure over active gate and method to fabricate same

Silicon and silicon germanium nanowire structures

Gate-all-around (GAA) transistors with nanowires on an isolation pe...

Semiconductor device having metallic source and drain regions

Silicon and silicon germanium nanowire structures

Nanowire structures having non-discrete source and drain regions

Semiconductor devices having modulated nanowire counts

Gate-all-around (GAA) transistor with stacked nanowires on locally...

Gate contact structure over active gate and method to fabricate same

CMOS nanowire structure

Semiconductor device with isolated body portion

Isolated and bulk semiconductor devices formed on a same bulk subst...

Uniaxially strained nanowire structure

Common-substrate semiconductor devices having nanowires or semicond...

Conversion of strain-inducing buffer to electrical insulator

Semiconductor device with isolated body portion

Silicon and silicon germanium nanowire structures

CMOS nanowire structure

Semiconductor device having metallic source and drain regions

Nanowire structures having non-discrete source and drain regions

Common-substrate semiconductor devices having nanowires or semicond...

Uniaxially strained nanowire structure

Methods for fabricating strained gate-all-around semiconductor devi...

Three-dimensional germanium-based semiconductor devices formed on g...

Conversion of strain-inducing buffer to electrical insulator

Gate contact structure over active gate and method to fabricate same

Isolated and bulk semiconductor devices formed on a same bulk subst...

Patents Applicationslast 30 patents

Nanowire Structures Having Non-Discrete Source and Drain Regions

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS

STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY O...

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

SEMICONDUCTOR DEVICE WITH ISOLATED BODY PORTION

NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS

CMOS NANOWIRE STRUCTURE

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

SEMICONDUCTOR DEVICE HAVING METALLIC SOURCE AND DRAIN REGIONS

STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY O...

UNIAXIALLY STRAINED NANOWIRE STRUCTURE

CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR

THREE-DIMENSIONAL GERMANIUM-BASED SEMICONDUCTOR DEVICES FORMED ON G...

GATE CONTACT STRUCTURE OVER ACTIVE GATE AND METHOD TO FABRICATE SAME

ISOLATED AND BULK SEMICONDUCTOR DEVICES FORMED ON A SAME BULK SUBST...

Methods for Fabricating Strained Gate-All-Around Semiconductor Devi...

COMMON-SUBSTRATE SEMICONDUCTOR DEVICES HAVING NANOWIRES OR SEMICOND...

CMOS NANOWIRE STRUCTURE

UNIAXIALLY STRAINED NANOWIRE STRUCTURE

CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR

NANOWIRE STRUCTURES HAVING NON-DISCRETE SOURCE AND DRAIN REGIONS

STRAINED GATE-ALL-AROUND SEMICONDUCTOR DEVICES FORMED ON GLOBALLY O...

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

THREE-DIMENSIONAL GERMANIUM-BASED SEMICONDUCTOR DEVICES FORMED ON G...

JUNCTIONLESS ACCUMULATION-MODE DEVICE ISOLATED FROM SEMICONDUCTIVE...

SILICON AND SILICON GERMANIUM NANOWIRE STRUCTURES

CONVERSION OF STRAIN-INDUCING BUFFER TO ELECTRICAL INSULATOR