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Anthony S. Arrott
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Washington, DC, US
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Patents Grants
last 30 patents
Information
Patent Grant
Method for forming magneto-resistive memory cells with shape anisot...
Patent number
7,208,323
Issue date
Apr 24, 2007
Micron Technology, Inc.
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Grant
Magneto-resistive memory cell structures with improved selectivity
Patent number
7,200,035
Issue date
Apr 3, 2007
Micron Technology, Inc.
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Grant
Pulsed write techniques for magneto-resistive memories
Patent number
7,038,940
Issue date
May 2, 2006
Micron Technology, Inc.
Richard W. Swanson
G11 - INFORMATION STORAGE
Information
Patent Grant
Method for manufacture of magneto-resistive bit structure
Patent number
7,029,923
Issue date
Apr 18, 2006
Micron Technology, Inc.
Harry Liu
G11 - INFORMATION STORAGE
Information
Patent Grant
Methods of increasing write selectivity in an MRAM
Patent number
6,992,918
Issue date
Jan 31, 2006
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Information
Patent Grant
Magneto-resistive memory cell structures with improved selectivity
Patent number
6,920,064
Issue date
Jul 19, 2005
Micron Technology, Inc.
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Grant
Magneto-resistive memory cell with shape anistropy and memory devic...
Patent number
6,906,950
Issue date
Jun 14, 2005
Micron Technology, Inc.
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Grant
Method for manufacture of magneto-resistive bit structure
Patent number
6,872,997
Issue date
Mar 29, 2005
Micron Technology, Inc.
Harry Liu
G11 - INFORMATION STORAGE
Information
Patent Grant
Pulsed write techniques for magneto-resistive memories
Patent number
6,850,431
Issue date
Feb 1, 2005
Micron Technology, Inc.
Richard W. Swanson
G11 - INFORMATION STORAGE
Information
Patent Grant
Methods of increasing write selectivity in an MRAM
Patent number
6,791,856
Issue date
Sep 14, 2004
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Information
Patent Grant
Magnetic memory cell with shape anisotropy
Patent number
6,765,823
Issue date
Jul 20, 2004
Micron Technology Incorporated
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Grant
Methods of increasing write selectivity in an MRAM
Patent number
6,756,240
Issue date
Jun 29, 2004
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Information
Patent Grant
Magneto-resistive memory cell structures with improved selectivity
Patent number
6,735,112
Issue date
May 11, 2004
Micron Technology, Inc.
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Grant
Pulsed write techniques for magneto-resistive memories
Patent number
6,724,654
Issue date
Apr 20, 2004
Micron Technology, Inc.
Richard W. Swanson
G11 - INFORMATION STORAGE
Information
Patent Grant
Magneto-resistive bit structure and method of manufacture therefor
Patent number
6,717,194
Issue date
Apr 6, 2004
Micron Technology, Inc.
Harry Liu
G11 - INFORMATION STORAGE
Information
Patent Grant
MRAM architectures for increased write selectivity
Patent number
6,522,574
Issue date
Feb 18, 2003
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Information
Patent Grant
Pulse write techniques for magneto-resistive memories
Patent number
6,493,259
Issue date
Dec 10, 2002
Micron Technology, Inc.
Richard W. Swanson
G11 - INFORMATION STORAGE
Information
Patent Grant
MRAM architectures for increased write selectivity
Patent number
6,424,564
Issue date
Jul 23, 2002
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Information
Patent Grant
MRAM architecture using offset bits for increased write selectivity
Patent number
6,424,561
Issue date
Jul 23, 2002
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Patents Applications
last 30 patents
Information
Patent Application
MODIFIED PSEUDO-SPIN VALVE (PSV) FOR MEMORY APPLICATIONS
Publication number
20070279971
Publication date
Dec 6, 2007
Micron Technology, Inc.
Timothy J. Vogt
G11 - INFORMATION STORAGE
Information
Patent Application
Magneto-resistive memory cell structures with improved selectivity
Publication number
20050226039
Publication date
Oct 13, 2005
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Application
Magnetic memory cell with shape anisotropy
Publication number
20050226040
Publication date
Oct 13, 2005
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Application
Pulsed write techniques for magneto-resistive memories
Publication number
20050185452
Publication date
Aug 25, 2005
Richard W. Swanson
G11 - INFORMATION STORAGE
Information
Patent Application
Magnetic memory cell with shape anisotropy
Publication number
20040240264
Publication date
Dec 2, 2004
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Application
Magneto-resistive memory cell structures with improved selectivity
Publication number
20040213055
Publication date
Oct 28, 2004
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Application
Pulsed write techniques for magneto-resistive memories
Publication number
20040184314
Publication date
Sep 23, 2004
Micron Technology, Inc.
Richard W. Swanson
G11 - INFORMATION STORAGE
Information
Patent Application
METHOD FOR MANUFACTURE OF MAGNETO-RESISTIVE BIT STRUCTURE
Publication number
20040155307
Publication date
Aug 12, 2004
Harry Liu
G11 - INFORMATION STORAGE
Information
Patent Application
MEMORY CELL STRUCTURES FOR LATCH MEMORY APPLICATION
Publication number
20040145943
Publication date
Jul 29, 2004
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Application
Method for manufacture of magneto-resistive bit structure
Publication number
20040126709
Publication date
Jul 1, 2004
Harry Liu
G11 - INFORMATION STORAGE
Information
Patent Application
METHODS OF INCREASING WRITE SELECTIVITY IN AN MRAM
Publication number
20040082082
Publication date
Apr 29, 2004
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Information
Patent Application
Methods of increasing write selectivity in an MRAM
Publication number
20040004878
Publication date
Jan 8, 2004
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Information
Patent Application
Magneto-resistive memory cell structures with improved selectivity
Publication number
20030147273
Publication date
Aug 7, 2003
Theodore Zhu
G11 - INFORMATION STORAGE
Information
Patent Application
Methods of increasing write selectivity in an MRAM
Publication number
20030086321
Publication date
May 8, 2003
Micron Technology, Inc.
Shaoping Li
G11 - INFORMATION STORAGE
Information
Patent Application
Magneto-resistive bit structure and method of manufacture therefor
Publication number
20030081462
Publication date
May 1, 2003
Harry Liu
G11 - INFORMATION STORAGE
Information
Patent Application
MRAM architectures for increased write selectivity
Publication number
20020012268
Publication date
Jan 31, 2002
Shaoping Li
H01 - BASIC ELECTRIC ELEMENTS
Information
Patent Application
MRAM architectures for increased write selectivity
Publication number
20020012269
Publication date
Jan 31, 2002
Shaoping Li
H01 - BASIC ELECTRIC ELEMENTS