Anton Mauder

Person

Kolbermoor, DE

People

Patents Grantslast 30 patents

Information Patent Grant
Single chip power diode and method of producing a single chip power...
- Patent number 12,132,122
- Issue date Oct 29, 2024
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Double gate transistor device and method of operating
- Patent number 12,003,231
- Issue date Jun 4, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with p-contact and doped insulation bloc...
- Patent number 11,949,006
- Issue date Apr 2, 2024
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,848,377
- Issue date Dec 19, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a semiconductor device having a bond wire o...
- Patent number 11,837,528
- Issue date Dec 5, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for manufacturing a semiconductor device
- Patent number 11,764,296
- Issue date Sep 19, 2023
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with trench gate structure and method of man...
- Patent number 11,735,633
- Issue date Aug 22, 2023
- Infineon Technologies AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Mesa contact for a power semiconductor device and method of produci...
- Patent number 11,728,420
- Issue date Aug 15, 2023
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor package with signal distribution element
- Patent number 11,721,616
- Issue date Aug 8, 2023
- Infineon Technologies Austria AG
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power diode and method of manufacturing a power diode
- Patent number 11,695,083
- Issue date Jul 4, 2023
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Short circuit protection structure in MOS-gated power devices
- Patent number 11,688,732
- Issue date Jun 27, 2023
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diode and method of producing a diode
- Patent number 11,664,464
- Issue date May 30, 2023
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body
- Patent number 11,600,701
- Issue date Mar 7, 2023
- Infineon Technologies AG
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide device with compensation layer and method of manufa...
- Patent number 11,552,172
- Issue date Jan 10, 2023
- Infineon Technologies AG
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
RC IGBT
- Patent number 11,469,317
- Issue date Oct 11, 2022
- Infineon Technologies Austria AG
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Power semiconductor device with integrated current measurement
- Patent number 11,346,880
- Issue date May 31, 2022
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for producing a superjunction device
- Patent number 11,342,187
- Issue date May 24, 2022
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having an electrostatic discharge protection s...
- Patent number 11,302,781
- Issue date Apr 12, 2022
- Infineon Technologies AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with integrated temperature protection
- Patent number 11,276,680
- Issue date Mar 15, 2022
- Infineon Technologies Austria AG
- Daniel Pedone
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device
- Patent number 11,276,772
- Issue date Mar 15, 2022
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including electrode trench structure and isola...
- Patent number 11,195,942
- Issue date Dec 7, 2021
- Infineon Technologies AG
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing silicon carbide semiconductor devices
- Patent number 11,177,354
- Issue date Nov 16, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing a semiconductor d...
- Patent number 11,171,230
- Issue date Nov 9, 2021
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device having fully depleted channel regions
- Patent number 11,171,202
- Issue date Nov 9, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of over current and over voltage protection of a power switc...
- Patent number 11,146,258
- Issue date Oct 12, 2021
- Infineon Technologies Austria AG
- Karl Norling
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device including trench structures and manufacturing...
- Patent number 11,121,220
- Issue date Sep 14, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Molding compound and semiconductor package with a molding compound
- Patent number 11,069,626
- Issue date Jul 20, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor device with reliably verifiable p-contact and m...
- Patent number 11,018,051
- Issue date May 25, 2021
- Infineon Technologies Dresden GmbH & Co. KG
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component with edge termination region
- Patent number 11,018,249
- Issue date May 25, 2021
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor component having a SiC semiconductor body and method...
- Patent number 11,011,606
- Issue date May 18, 2021
- Infineon Technologies AG
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING
- Publication number 20240275379
- Publication date Aug 15, 2024
- Infineon Technologies Austria AG
- Markus Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE DRIVER CIRCUIT AND POWER SWITCHING ASSEMBLY WITH GATE DRIVER C...
- Publication number 20240113705
- Publication date Apr 4, 2024
- Infineon Technologies Austria AG
- Anton Mauder
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF
- Publication number 20240113053
- Publication date Apr 4, 2024
- INFINEON TECHNOLOGIES AG
- Andreas Korzenietz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE
- Publication number 20240063216
- Publication date Feb 22, 2024
- INFINEON TECHNOLOGIES AG
- Digvijay Raghunathan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Diode and Method of Manufacturing a Power Diode
- Publication number 20230307554
- Publication date Sep 28, 2023
- Infineon Technologies Austria AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Single Chip Power Diode and Method of Producing a Single Chip Power...
- Publication number 20230290885
- Publication date Sep 14, 2023
- Infineon Technologies Austria AG
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INPUT CAPACITANCE ENHANCEMENT FOR ESD RUGGEDNESS IN SEMICONDUCTOR D...
- Publication number 20230282736
- Publication date Sep 7, 2023
- Rabie Djemour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR ASSEMBLY WITH SEMICONDUCTOR SWITCHING DEVICE AND CURR...
- Publication number 20230223472
- Publication date Jul 13, 2023
- INFINEON TECHNOLOGIES AG
- Anton MAUDER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component Having A SiC Semiconductor Body
- Publication number 20230148156
- Publication date May 11, 2023
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION
- Publication number 20220406928
- Publication date Dec 22, 2022
- INFINEON TECHNOLOGIES AG
- Joachim Weyers
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Device with Improved Performance in Operation and Imp...
- Publication number 20220384305
- Publication date Dec 1, 2022
- Infineon Technologies Austria AG
- Edward Fuergut
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH TERMINATION STRUCTURE AND FIELD-FREE REGION
- Publication number 20220359314
- Publication date Nov 10, 2022
- INFINEON TECHNOLOGIES AG
- Rabie Djemour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOLTAGE-CONTROLLED SWITCHING DEVICE WITH CHANNEL REGION
- Publication number 20220262935
- Publication date Aug 18, 2022
- Hans-Juergen Thees
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Voltage-Controlled Switching Device with Resistive Path
- Publication number 20220102478
- Publication date Mar 31, 2022
- Infineon Technologies Dresden GmbH & Co. KG
- Christian Philipp Sandow
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device Having Nanometer-Scale Structure
- Publication number 20220059650
- Publication date Feb 24, 2022
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE
- Publication number 20220029013
- Publication date Jan 27, 2022
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Manufacturing Silicon Carbide Semiconductor Devices
- Publication number 20220028980
- Publication date Jan 27, 2022
- Andreas Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Diode and Method of Producing a Diode
- Publication number 20220029030
- Publication date Jan 27, 2022
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Mesa Contact for a Power Semiconductor Device and Method of Produci...
- Publication number 20220020876
- Publication date Jan 20, 2022
- Infineon Technologies AG
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Package with Signal Distribution Element
- Publication number 20210384111
- Publication date Dec 9, 2021
- Stephan Voss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RC IGBT
- Publication number 20210296479
- Publication date Sep 23, 2021
- Frank Dieter Pfirsch
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Power Semiconductor Device with p-contact
- Publication number 20210272843
- Publication date Sep 2, 2021
- Markus Beninger-Bina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Semiconductor Component with Edge Termination Region
- Publication number 20210257489
- Publication date Aug 19, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR COMPONENT HAVING A SIC SEMICONDUCTOR BODY
- Publication number 20210226015
- Publication date Jul 22, 2021
- Andreas Peter Meiser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Diode and Method of Manufacturing a Power Diode
- Publication number 20210226072
- Publication date Jul 22, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Short Circuit Protection Structure in MOS-Gated Power Devices
- Publication number 20210193646
- Publication date Jun 24, 2021
- Guang Zeng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A BOND WIRE O...
- Publication number 20210183746
- Publication date Jun 17, 2021
- Anton Mauder
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Trench Gate Structure and Method of Man...
- Publication number 20210134960
- Publication date May 6, 2021
- INFINEON TECHNOLOGIES AG
- Ralf Siemieniec
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Device and Manufacturing Method
- Publication number 20210028119
- Publication date Jan 28, 2021
- Fabian Streb
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Carbide Device with Compensation Layer and Method of Manufa...
- Publication number 20210013310
- Publication date Jan 14, 2021
- Caspar Leendertz
- H01 - BASIC ELECTRIC ELEMENTS

Anton Mauder

Person

Patents Grantslast 30 patents

Single chip power diode and method of producing a single chip power...

Double gate transistor device and method of operating

Power semiconductor device with p-contact and doped insulation bloc...

Semiconductor component with edge termination region

Method of manufacturing a semiconductor device having a bond wire o...

Method for manufacturing a semiconductor device

Silicon carbide device with trench gate structure and method of man...

Mesa contact for a power semiconductor device and method of produci...

Semiconductor package with signal distribution element

Power diode and method of manufacturing a power diode

Short circuit protection structure in MOS-gated power devices

Diode and method of producing a diode

Semiconductor component having a SiC semiconductor body

Silicon carbide device with compensation layer and method of manufa...

RC IGBT

Power semiconductor device with integrated current measurement

Method for producing a superjunction device

Semiconductor device having an electrostatic discharge protection s...

Power semiconductor device with integrated temperature protection

Power semiconductor device

Semiconductor device including electrode trench structure and isola...

Method of manufacturing silicon carbide semiconductor devices

Semiconductor device and method for manufacturing a semiconductor d...

Power semiconductor device having fully depleted channel regions

Method of over current and over voltage protection of a power switc...

Semiconductor device including trench structures and manufacturing...

Molding compound and semiconductor package with a molding compound

Power semiconductor device with reliably verifiable p-contact and m...

Semiconductor component with edge termination region

Semiconductor component having a SiC semiconductor body and method...

Patents Applicationslast 30 patents

DOUBLE GATE TRANSISTOR DEVICE AND METHOD OF OPERATING

GATE DRIVER CIRCUIT AND POWER SWITCHING ASSEMBLY WITH GATE DRIVER C...

SEMICONDUCTOR DEVICE AND METHOD OF PRODUCING THEREOF

SEMICONDUCTOR DEVICE AND ELECTRONIC DEVICE

Power Diode and Method of Manufacturing a Power Diode

Single Chip Power Diode and Method of Producing a Single Chip Power...

INPUT CAPACITANCE ENHANCEMENT FOR ESD RUGGEDNESS IN SEMICONDUCTOR D...

SEMICONDUCTOR ASSEMBLY WITH SEMICONDUCTOR SWITCHING DEVICE AND CURR...

Semiconductor Component Having A SiC Semiconductor Body

SEMICONDUCTOR DEVICE WITH DIODE CHAIN CONNECTED TO GATE METALLIZATION

Semiconductor Device with Improved Performance in Operation and Imp...

SEMICONDUCTOR DEVICE WITH TERMINATION STRUCTURE AND FIELD-FREE REGION

VOLTAGE-CONTROLLED SWITCHING DEVICE WITH CHANNEL REGION

Voltage-Controlled Switching Device with Resistive Path

Power Semiconductor Device Having Nanometer-Scale Structure

METHOD FOR MANUFACTURING A SEMICONDUCTOR DEVICE

Method of Manufacturing Silicon Carbide Semiconductor Devices

Diode and Method of Producing a Diode

Mesa Contact for a Power Semiconductor Device and Method of Produci...

Semiconductor Package with Signal Distribution Element

RC IGBT

Power Semiconductor Device with p-contact

Semiconductor Component with Edge Termination Region

SEMICONDUCTOR COMPONENT HAVING A SIC SEMICONDUCTOR BODY

Power Diode and Method of Manufacturing a Power Diode

Short Circuit Protection Structure in MOS-Gated Power Devices

METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE HAVING A BOND WIRE O...

Silicon Carbide Device with Trench Gate Structure and Method of Man...

Power Semiconductor Device and Manufacturing Method

Silicon Carbide Device with Compensation Layer and Method of Manufa...