Anurag Tyagi

Person

Fremont, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Apparatus, system, and method for stepping up high voltages within...
- Patent number 11,972,895
- Issue date Apr 30, 2024
- Meta Platforms Technologies, LLC
- John Goward
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emission display element and device with polarized and angula...
- Patent number 11,889,717
- Issue date Jan 30, 2024
- Meta Platforms Technologies, LLC
- Zhimin Shi
- G09 - EDUCATION CRYPTOGRAPHY DISPLAY ADVERTISING SEALS
Information Patent Grant
In situ selective etching and selective regrowth of epitaxial layer...
- Patent number 11,869,922
- Issue date Jan 9, 2024
- Meta Platforms Technologies, LLC
- Anurag Tyagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Wafer-level 3D integration of high voltage optical transformer
- Patent number 11,810,908
- Issue date Nov 7, 2023
- Meta Platforms Technologies, LLC
- Christopher Yuan Ting Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic light source with integrated optics based on nonlinear f...
- Patent number 11,749,964
- Issue date Sep 5, 2023
- Meta Platforms Technologies, LLC
- Maik Andre Scheller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Regrowth of epitaxial layer for surface recombination velocity redu...
- Patent number 11,677,042
- Issue date Jun 13, 2023
- Meta Platforms Technologies, LLC
- Markus Broell
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
In situ selective etching and selective regrowth of epitaxial layer...
- Patent number 11,424,289
- Issue date Aug 23, 2022
- Meta Platforms Technologies, LLC
- Anurag Tyagi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Surface emitting light source with lateral variant refractive index...
- Patent number 11,099,393
- Issue date Aug 24, 2021
- Facebook Technologies, LLC
- Maik Andre Scheller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and system for epitaxy processes on miscut bulk substrates
- Patent number 9,653,650
- Issue date May 16, 2017
- Soraa, Inc.
- Arpan Chakraborty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for smoothing surface of a substrate containing gallium and...
- Patent number 9,646,827
- Issue date May 9, 2017
- Soraa, Inc.
- Arpan Chakraborty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Miscut bulk substrates
- Patent number 9,236,530
- Issue date Jan 12, 2016
- Soraa, Inc.
- Arpan Chakraborty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semipolar or nonpolar nitride-based devices on partially or fully r...
- Patent number 9,159,553
- Issue date Oct 13, 2015
- The Regents of the University of California
- Hiroaki Ohta
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Semi-polar III-nitride optoelectronic devices on M-plane substrates...
- Patent number 9,077,151
- Issue date Jul 7, 2015
- The Regents of the University of California
- Po Shan Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High light extraction efficiency nitride based light emitting diode...
- Patent number 9,040,326
- Issue date May 26, 2015
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Anisotropic strain control in semipolar nitride quantum wells by pa...
- Patent number 8,866,126
- Issue date Oct 21, 2014
- The Regents of the University of California
- Hiroaki Ohta
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Limiting strain relaxation in III-nitride hetero-structures by subs...
- Patent number 8,853,669
- Issue date Oct 7, 2014
- The Regents of the University of California
- James S. Speck
- B82 - NANO-TECHNOLOGY
Information Patent Grant
High light extraction efficiency nitride based light emitting diode...
- Patent number 8,835,200
- Issue date Sep 16, 2014
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semip...
- Patent number 8,541,869
- Issue date Sep 24, 2013
- The Regents of the University of California
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Anisotropic strain control in semipolar nitride quantum wells by pa...
- Patent number 8,481,991
- Issue date Jul 9, 2013
- The Regents of the University of California
- Hiroaki Ohta
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Thin p-type gallium nitride and aluminum gallium nitride electron-b...
- Patent number 8,227,819
- Issue date Jul 24, 2012
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High light extraction efficiency nitride based light emitting diode...
- Patent number 8,114,698
- Issue date Feb 14, 2012
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Thin P-type gallium nitride and aluminum gallium nitride electron-b...
- Patent number 8,044,383
- Issue date Oct 25, 2011
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TUNABLE REFLECTIVE POLARIZER
- Publication number 20230393317
- Publication date Dec 7, 2023
- Meta Platforms Technologies, LLC
- Tanya Malhotra
- G02 - OPTICS
Information Patent Application
METASURFACE-MANIPULATED EMISSION FROM A PARTIALLY SPATIALLY COHEREN...
- Publication number 20230384489
- Publication date Nov 30, 2023
- University of Rochester
- Tanya Malhotra
- G02 - OPTICS
Information Patent Application
LIGHT EMISSION DISPLAY ELEMENT AND DEVICE WITH POLARIZED AND ANGULA...
- Publication number 20230084436
- Publication date Mar 16, 2023
- Meta Platforms Technologies, LLC
- Zhimin SHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
WAFER-LEVEL 3D INTEGRATION OF HIGH VOLTAGE OPTICAL TRANSFORMER
- Publication number 20220375910
- Publication date Nov 24, 2022
- Meta Platforms Technologies, LLC
- Christopher Yuan Ting Liao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU SELECTIVE ETCHING AND SELECTIVE REGROWTH OF EPITAXIAL LAYER...
- Publication number 20220352254
- Publication date Nov 3, 2022
- Meta Platforms Technologies, LLC
- Anurag TYAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION
- Publication number 20220231192
- Publication date Jul 21, 2022
- Facebook Technologies, LLC
- Christophe Antoine HURNI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH REFRACTIVE INDEX BIREFRINGENT ORGANIC SOLID CRYSTAL AND METHOD...
- Publication number 20220035075
- Publication date Feb 3, 2022
- Facebook Technologies, LLC
- Tingling RAO
- C09 - DYES PAINTS POLISHES NATURAL RESINS ADHESIVES MISCELLANEOUS COMPOSITION...
Information Patent Application
MONOLITHIC LIGHT SOURCE WITH INTEGRATED OPTICS BASED ON NONLINEAR F...
- Publication number 20210408761
- Publication date Dec 30, 2021
- Facebook Technologies, LLC
- Maik Andre Scheller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SURFACE EMITTING LIGHT SOURCE WITH LATERAL VARIANT REFRACTIVE INDEX...
- Publication number 20210157142
- Publication date May 27, 2021
- Facebook Technologies, LLC
- Maik Andre Scheller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
IN SITU SELECTIVE ETCHING AND SELECTIVE REGROWTH OF EPITAXIAL LAYER...
- Publication number 20210151498
- Publication date May 20, 2021
- Facebook Technologies, LLC
- Anurag TYAGI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
RED MICRO-LED WITH DOPANTS IN ACTIVE REGION
- Publication number 20210126164
- Publication date Apr 29, 2021
- Facebook Technologies, LLC
- Markus BROELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REGROWTH OF EPITAXIAL LAYER FOR SURFACE RECOMBINATION VELOCITY REDU...
- Publication number 20200313036
- Publication date Oct 1, 2020
- Markus BROELL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...
- Publication number 20180152004
- Publication date May 31, 2018
- The Regents of the University of California
- Po Shan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND SYSTEM FOR EPITAXY PROCESSES ON MISCUT BULK SUBSTRATES
- Publication number 20160268476
- Publication date Sep 15, 2016
- Soraa, Inc.
- ARPAN CHAKRABORTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...
- Publication number 20150255959
- Publication date Sep 10, 2015
- The Regents of the University of California
- Po Shan Hsu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PA...
- Publication number 20140376584
- Publication date Dec 25, 2014
- The Regents of the University of California
- Hiroaki Ohta
- B82 - NANO-TECHNOLOGY
Information Patent Application
HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE...
- Publication number 20140346542
- Publication date Nov 27, 2014
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PA...
- Publication number 20130259080
- Publication date Oct 3, 2013
- Hiroaki Ohta
- B82 - NANO-TECHNOLOGY
Information Patent Application
Method and System for Epitaxy Processes on Miscut Bulk Substrates
- Publication number 20130075770
- Publication date Mar 28, 2013
- Soraa, Inc.
- Arpan Chakraborty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE...
- Publication number 20120104412
- Publication date May 3, 2012
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LIMITING STRAIN RELAXATION IN III-NITRIDE HETERO-STRUCTURES BY SUBS...
- Publication number 20120097919
- Publication date Apr 26, 2012
- The Regents of the University of California
- James S. Speck
- B82 - NANO-TECHNOLOGY
Information Patent Application
VICINAL SEMIPOLAR III-NITRIDE SUBSTRATES TO COMPENSATE TILT OF RELA...
- Publication number 20120100650
- Publication date Apr 26, 2012
- The Regents of the University of California
- James S. Speck
- B82 - NANO-TECHNOLOGY
Information Patent Application
THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-B...
- Publication number 20120037884
- Publication date Feb 16, 2012
- The Regents of the University of California
- HONG ZHONG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...
- Publication number 20110216795
- Publication date Sep 8, 2011
- The Regents of the University of California
- Po Shan Hsu
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS
- Publication number 20110170569
- Publication date Jul 14, 2011
- The Regents of the University of California
- Anurag Tyagi
- B82 - NANO-TECHNOLOGY
Information Patent Application
ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PA...
- Publication number 20110062415
- Publication date Mar 17, 2011
- The Regents of the University of California
- Hiroaki Ohta
- B82 - NANO-TECHNOLOGY
Information Patent Application
SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOY...
- Publication number 20110064103
- Publication date Mar 17, 2011
- The Regents of the University of California
- Hiroaki Ohta
- B82 - NANO-TECHNOLOGY
Information Patent Application
THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-B...
- Publication number 20110037085
- Publication date Feb 17, 2011
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE...
- Publication number 20090146170
- Publication date Jun 11, 2009
- The Regents of the University of California
- Hong Zhong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIP...
- Publication number 20080191223
- Publication date Aug 14, 2008
- The Regents of the University of California
- Shuji Nakamura
- B82 - NANO-TECHNOLOGY

Anurag Tyagi

Person

Patents Grantslast 30 patents

Apparatus, system, and method for stepping up high voltages within...

Light emission display element and device with polarized and angula...

In situ selective etching and selective regrowth of epitaxial layer...

Wafer-level 3D integration of high voltage optical transformer

Monolithic light source with integrated optics based on nonlinear f...

Regrowth of epitaxial layer for surface recombination velocity redu...

In situ selective etching and selective regrowth of epitaxial layer...

Surface emitting light source with lateral variant refractive index...

Method and system for epitaxy processes on miscut bulk substrates

Method for smoothing surface of a substrate containing gallium and...

Miscut bulk substrates

Semipolar or nonpolar nitride-based devices on partially or fully r...

Semi-polar III-nitride optoelectronic devices on M-plane substrates...

High light extraction efficiency nitride based light emitting diode...

Anisotropic strain control in semipolar nitride quantum wells by pa...

Limiting strain relaxation in III-nitride hetero-structures by subs...

High light extraction efficiency nitride based light emitting diode...

Cleaved facet (Ga,Al,In)N edge-emitting laser diodes grown on semip...

Anisotropic strain control in semipolar nitride quantum wells by pa...

Thin p-type gallium nitride and aluminum gallium nitride electron-b...

High light extraction efficiency nitride based light emitting diode...

Thin P-type gallium nitride and aluminum gallium nitride electron-b...

Patents Applicationslast 30 patents

TUNABLE REFLECTIVE POLARIZER

METASURFACE-MANIPULATED EMISSION FROM A PARTIALLY SPATIALLY COHEREN...

LIGHT EMISSION DISPLAY ELEMENT AND DEVICE WITH POLARIZED AND ANGULA...

WAFER-LEVEL 3D INTEGRATION OF HIGH VOLTAGE OPTICAL TRANSFORMER

IN SITU SELECTIVE ETCHING AND SELECTIVE REGROWTH OF EPITAXIAL LAYER...

CURRENT APERTURE IN MICRO-LED THROUGH STRESS RELAXATION

HIGH REFRACTIVE INDEX BIREFRINGENT ORGANIC SOLID CRYSTAL AND METHOD...

MONOLITHIC LIGHT SOURCE WITH INTEGRATED OPTICS BASED ON NONLINEAR F...

SURFACE EMITTING LIGHT SOURCE WITH LATERAL VARIANT REFRACTIVE INDEX...

IN SITU SELECTIVE ETCHING AND SELECTIVE REGROWTH OF EPITAXIAL LAYER...

RED MICRO-LED WITH DOPANTS IN ACTIVE REGION

REGROWTH OF EPITAXIAL LAYER FOR SURFACE RECOMBINATION VELOCITY REDU...

SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...

METHOD AND SYSTEM FOR EPITAXY PROCESSES ON MISCUT BULK SUBSTRATES

SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...

ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PA...

HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE...

ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PA...

Method and System for Epitaxy Processes on Miscut Bulk Substrates

HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE...

LIMITING STRAIN RELAXATION IN III-NITRIDE HETERO-STRUCTURES BY SUBS...

VICINAL SEMIPOLAR III-NITRIDE SUBSTRATES TO COMPENSATE TILT OF RELA...

THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-B...

SEMI-POLAR III-NITRIDE OPTOELECTRONIC DEVICES ON M-PLANE SUBSTRATES...

SEMIPOLAR III-NITRIDE LASER DIODES WITH ETCHED MIRRORS

ANISOTROPIC STRAIN CONTROL IN SEMIPOLAR NITRIDE QUANTUM WELLS BY PA...

SEMIPOLAR NITRIDE-BASED DEVICES ON PARTIALLY OR FULLY RELAXED ALLOY...

THIN P-TYPE GALLIUM NITRIDE AND ALUMINUM GALLIUM NITRIDE ELECTRON-B...

HIGH LIGHT EXTRACTION EFFICIENCY NITRIDE BASED LIGHT EMITTING DIODE...

CLEAVED FACET (Ga,Al,In)N EDGE-EMITTING LASER DIODES GROWN ON SEMIP...