April Gurba

Person

Plano, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Reliable high voltage gate dielectric layers using a dual nitridati...
- Patent number 7,560,792
- Issue date Jul 14, 2009
- Texas Instruments Incorporated
- Rajesh Khamankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post high voltage gate oxide pattern high-vacuum outgas surface tre...
- Patent number 7,402,524
- Issue date Jul 22, 2008
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dual-gate integrated circuit semiconductor device
- Patent number 7,339,240
- Issue date Mar 4, 2008
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Reliable high voltage gate dielectric layers using a dual nitridati...
- Patent number 7,183,165
- Issue date Feb 27, 2007
- Texas Instruments Incorporated
- Rajesh Khamankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monitoring of nitrided oxide gate dielectrics by determination of a...
- Patent number 7,087,440
- Issue date Aug 8, 2006
- Texas Instruments Corporation
- April Gurba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post high voltage gate dielectric pattern plasma surface treatment
- Patent number 7,049,242
- Issue date May 23, 2006
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Post high voltage gate oxide pattern high-vacuum outgas surface tre...
- Patent number 7,018,925
- Issue date Mar 28, 2006
- Texas Instruments Incorporated
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
REWORK METHODOLOGY THAT PRESERVES GATE PERFORMANCE
- Publication number 20080076076
- Publication date Mar 27, 2008
- TEXAS INSTRUMENTS INCORPORATED
- Yaw Samuel Obeng
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Application
Reliable high voltage gate dielectric layers using a dual nitridati...
- Publication number 20070117331
- Publication date May 24, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Rajesh Khamankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post high voltage gate dielectric pattern plasma surface treatment
- Publication number 20060183337
- Publication date Aug 17, 2006
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post high voltage gate oxide pattern high-vacuum outgas surface tre...
- Publication number 20060084229
- Publication date Apr 20, 2006
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post high voltage gate oxide pattern high-vacuum outgas surface tre...
- Publication number 20040266113
- Publication date Dec 30, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Monitoring of nitrided oxide gate dielectrics by determination of a...
- Publication number 20040235203
- Publication date Nov 25, 2004
- Texas Instruments, Incorporated
- April Gurba
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Post high voltage gate dielectric pattern plasma surface treatment
- Publication number 20040142570
- Publication date Jul 22, 2004
- TEXAS INSTRUMENTS INCORPORATED
- Brian K. Kirkpatrick
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Reliable high voltage gate dielectric layers using a dual nitridati...
- Publication number 20040102010
- Publication date May 27, 2004
- Rajesh Khamankar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nickel SALICIDE process technology for CMOS devices
- Publication number 20030235973
- Publication date Dec 25, 2003
- Jiong-Ping Lu
- H01 - BASIC ELECTRIC ELEMENTS

April Gurba

Person

Patents Grantslast 30 patents

Reliable high voltage gate dielectric layers using a dual nitridati...

Post high voltage gate oxide pattern high-vacuum outgas surface tre...

Dual-gate integrated circuit semiconductor device

Reliable high voltage gate dielectric layers using a dual nitridati...

Monitoring of nitrided oxide gate dielectrics by determination of a...

Post high voltage gate dielectric pattern plasma surface treatment

Post high voltage gate oxide pattern high-vacuum outgas surface tre...

Patents Applicationslast 30 patents

REWORK METHODOLOGY THAT PRESERVES GATE PERFORMANCE

Reliable high voltage gate dielectric layers using a dual nitridati...

Post high voltage gate dielectric pattern plasma surface treatment

Post high voltage gate oxide pattern high-vacuum outgas surface tre...

Post high voltage gate oxide pattern high-vacuum outgas surface tre...

Monitoring of nitrided oxide gate dielectrics by determination of a...

Post high voltage gate dielectric pattern plasma surface treatment

Reliable high voltage gate dielectric layers using a dual nitridati...

Nickel SALICIDE process technology for CMOS devices