Arnab SEN GUPTA

Person

Hillsboro, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Low resistance approaches for fabricating contacts and the resultin...
- Patent number 12,119,387
- Issue date Oct 15, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithic memory stack
- Patent number 12,058,847
- Issue date Aug 6, 2024
- Intel Corporation
- Prashant Majhi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Passivation layers for thin film transistors and methods of fabrica...
- Patent number 11,955,560
- Issue date Apr 9, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures with a metal oxide contact buffer and a metho...
- Patent number 11,843,058
- Issue date Dec 12, 2023
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistors for ultra-dense logic and memory applications
- Patent number 11,777,029
- Issue date Oct 3, 2023
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact stacks to reduce hydrogen in semiconductor devices
- Patent number 11,637,185
- Issue date Apr 25, 2023
- Intel Corporation
- Justin Weber
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial layers on contact electrodes for thin- film transistors
- Patent number 11,522,060
- Issue date Dec 6, 2022
- Intel Corporation
- Seung Hoon Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Contact stacks to reduce hydrogen in thin film transistor
- Patent number 11,444,205
- Issue date Sep 13, 2022
- Intel Corporatiion
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical thin-film transistors between metal layers
- Patent number 11,417,770
- Issue date Aug 16, 2022
- Intel Corporation
- Abhishek Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor structures with a metal oxide contact buffer
- Patent number 11,171,243
- Issue date Nov 9, 2021
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICA...
- Publication number 20240234579
- Publication date Jul 11, 2024
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS
- Publication number 20240120415
- Publication date Apr 11, 2024
- Intel Corporation
- Scott B. Clendenning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR PEROVSKITE TRANSISTORS
- Publication number 20240113212
- Publication date Apr 4, 2024
- Intel Corporation
- Ian Alexander Young
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC
- Publication number 20240113220
- Publication date Apr 4, 2024
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES
- Publication number 20240105810
- Publication date Mar 28, 2024
- Intel Corporation
- Rachel A. Steinhardt
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...
- Publication number 20240105854
- Publication date Mar 28, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...
- Publication number 20240097031
- Publication date Mar 21, 2024
- Intel Corporation
- Punyashloka Debashis
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...
- Publication number 20240006488
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE AND DRAIN REFRACTORY METAL CAP
- Publication number 20240006494
- Publication date Jan 4, 2024
- Intel Corporation
- Nazila Haratipour
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...
- Publication number 20240006506
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...
- Publication number 20240006533
- Publication date Jan 4, 2024
- Intel Corporation
- Gilbert Dewey
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...
- Publication number 20230420511
- Publication date Dec 28, 2023
- Intel Corporation
- Carl H. NAYLOR
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411443
- Publication date Dec 21, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES
- Publication number 20230411278
- Publication date Dec 21, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH HIGH-K PEROVSKITE GATE DIELECTRICS
- Publication number 20230253476
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS
- Publication number 20230253444
- Publication date Aug 10, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH PEROVSKITE FILMS
- Publication number 20230200081
- Publication date Jun 22, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL CARBON BARRIER REGION FOR NMOS DEVICE CONTACTS
- Publication number 20230187553
- Publication date Jun 15, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...
- Publication number 20230098594
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRAPHITIC CARBON CONTACTS FOR DEVICES WITH OXIDE CHANNELS
- Publication number 20230102219
- Publication date Mar 30, 2023
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER CAPACITOR WITH EDGE INSULATOR
- Publication number 20230102177
- Publication date Mar 30, 2023
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CAPACITOR WITH DUAL DIELECTRIC LAYERS
- Publication number 20230087624
- Publication date Mar 23, 2023
- Intel Corporation
- Kaan OGUZ
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIGITALLY CONTROLLED LITHOGRAPHICALLY-DEFINED MULTI-FREQUENCY ACOUS...
- Publication number 20230091766
- Publication date Mar 23, 2023
- Intel Corporation
- Ved V. Gund
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE
- Publication number 20220199839
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab SEN GUPTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THIN FILM TRANSISTORS HAVING A BACKSIDE CHANNEL CONTACT FOR HIGH DE...
- Publication number 20220199628
- Publication date Jun 23, 2022
- Intel Corporation
- Noriyuki SATO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET
- Publication number 20220199801
- Publication date Jun 23, 2022
- Intel Corporation
- Prashant MAJHI
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METAL INSULATOR METAL (MIM) CAPACITOR WITH PEROVSKITE DIELECTRIC
- Publication number 20220199519
- Publication date Jun 23, 2022
- Intel Corporation
- Chia-Ching LIN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON ELECTRODES FOR FERROELECTRIC CAPACITORS
- Publication number 20220199758
- Publication date Jun 23, 2022
- Intel Corporation
- Arnab Sen Gupta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION
- Publication number 20220199609
- Publication date Jun 23, 2022
- Intel Corporation
- Urusa ALAAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR CHANNEL MATERIALS
- Publication number 20220190121
- Publication date Jun 16, 2022
- Intel Corporation
- Abhishek A. Sharma
- H01 - BASIC ELECTRIC ELEMENTS

Arnab SEN GUPTA

Person

Patents Grantslast 30 patents

Low resistance approaches for fabricating contacts and the resultin...

Monolithic memory stack

Passivation layers for thin film transistors and methods of fabrica...

Transistor structures with a metal oxide contact buffer and a metho...

Vertical transistors for ultra-dense logic and memory applications

Contact stacks to reduce hydrogen in semiconductor devices

Epitaxial layers on contact electrodes for thin- film transistors

Contact stacks to reduce hydrogen in thin film transistor

Vertical thin-film transistors between metal layers

Transistor structures with a metal oxide contact buffer

Patents Applicationslast 30 patents

PASSIVATION LAYERS FOR THIN FILM TRANSISTORS AND METHODS OF FABRICA...

TECHNOLOGIES FOR ATOMIC LAYER DEPOSITION FOR FERROELECTRIC TRANSISTORS

TECHNOLOGIES FOR PEROVSKITE TRANSISTORS

TECHNOLOGIES FOR TRANSISTORS WITH A THIN-FILM FERROELECTRIC

VERTICAL FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES

TRANSISTOR STRUCTURES WITH A METAL OXIDE CONTACT BUFFER AND A METHO...

FERRORELECTRIC FIELD-EFFECT TRANSISTOR (FEFET) DEVICES WITH LOW OPE...

CAPPING SOURCE AND DRAIN REGIONS OF TRANSISTORS TO PREVENT DIFFUSIO...

SOURCE AND DRAIN REFRACTORY METAL CAP

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH PHOSPHIDE OR ARSE...

LOW-RESISTANCE AND THERMALLY STABLE CONTACTS WITH BORIDE, INDIUM, O...

STACKED SINGLE CRYSTAL TRANSITION-METAL DICHALCOGENIDE USING SEEDED...

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

METAL INSULATOR METAL (MIM) CAPACITOR ARCHITECTURES

TRANSISTOR DEVICES WITH HIGH-K PEROVSKITE GATE DIELECTRICS

CAPACITOR DEVICES WITH STRONTIUM TITANATE INSULATOR LAYERS

TRANSISTOR DEVICES WITH PEROVSKITE FILMS

METAL CARBON BARRIER REGION FOR NMOS DEVICE CONTACTS

CAPACITOR WITH AN ELECTRICALLY CONDUCTIVE LAYER COUPLED WITH A META...

GRAPHITIC CARBON CONTACTS FOR DEVICES WITH OXIDE CHANNELS

MULTILAYER CAPACITOR WITH EDGE INSULATOR

CAPACITOR WITH DUAL DIELECTRIC LAYERS

DIGITALLY CONTROLLED LITHOGRAPHICALLY-DEFINED MULTI-FREQUENCY ACOUS...

COMPOSITIONAL ENGINEERING OF SCHOTTKY DIODE

THIN FILM TRANSISTORS HAVING A BACKSIDE CHANNEL CONTACT FOR HIGH DE...

NOVEL METHOD TO FORM SINGLE CRYSTAL MOSFET AND FEFET

METAL INSULATOR METAL (MIM) CAPACITOR WITH PEROVSKITE DIELECTRIC

CARBON ELECTRODES FOR FERROELECTRIC CAPACITORS

NOVEL ESD PROTECTION DECOUPLED FROM DIFFUSION

TRANSISTOR CHANNEL MATERIALS