Ashish Pal

Person

Hayward, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Gradient doping epitaxy in superjunction to improve breakdown voltage
- Patent number 12,074,196
- Issue date Aug 27, 2024
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Airgap formation processes
- Patent number 11,735,467
- Issue date Aug 22, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded doping in power devices
- Patent number 11,705,490
- Issue date Jul 18, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Stress incorporation in semiconductor devices
- Patent number 11,699,755
- Issue date Jul 11, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Airgap formation processes
- Patent number 11,211,286
- Issue date Dec 28, 2021
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doped through-contact structures
- Patent number 11,145,726
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Sushant Mittal
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
VOID-FREE STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20240290883
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20240290884
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- El Mehdi Bazizi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED MOBILITY IN SEMICONDUCTOR DEVICES
- Publication number 20240290885
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON CARBIDE TRANSISTOR WITH CHANNEL COUNTER-DOPING AND POCKET-D...
- Publication number 20240258375
- Publication date Aug 1, 2024
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGY
- Publication number 20240014214
- Publication date Jan 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20230299199
- Publication date Sep 21, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND BACKSIDE POWER RAIL WITH DIFFUSION BREAK
- Publication number 20230260909
- Publication date Aug 17, 2023
- Applied Materials, Inc.
- Andrew Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACK...
- Publication number 20230260908
- Publication date Aug 17, 2023
- Applied Materials, Inc.
- Andrew Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTOR ARCHITECTURE WITH FILL-IN DIELECTRIC MAT...
- Publication number 20230170400
- Publication date Jun 1, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE DRAIN FORMATION IN GATE ALL AROUND TRANSISTOR
- Publication number 20230067331
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BACKSIDE POWER RAIL TO DEEP VIAS
- Publication number 20230068312
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED WIDE BACKSIDE POWER RAIL CONTACTS TO MULTIPLE TRANSIST...
- Publication number 20230064183
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ULTRA THINNING OF WAFER
- Publication number 20230061392
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Suketu Arun Parikh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADIENT DOPING EPITAXY IN SUPERJUNCTION TO IMPROVE BREAKDOWN VOLTAGE
- Publication number 20230008858
- Publication date Jan 12, 2023
- Applied Materials, Inc.
- Ashish PAL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GRADED DOPING IN POWER DEVICES
- Publication number 20220254886
- Publication date Aug 11, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR
- Publication number 20220246742
- Publication date Aug 4, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIRGAP FORMATION PROCESSES
- Publication number 20220115263
- Publication date Apr 14, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20220059698
- Publication date Feb 24, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DOPED THROUGH-CONTACT STRUCTURES
- Publication number 20210119002
- Publication date Apr 22, 2021
- Applied Materials, Inc.
- Sushant Mittal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
AIRGAP FORMATION PROCESSES
- Publication number 20190252239
- Publication date Aug 15, 2019
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Gradient doping epitaxy in superjunction to improve breakdown voltage

Airgap formation processes

Graded doping in power devices

Stress incorporation in semiconductor devices

Airgap formation processes

Doped through-contact structures

Patents Applicationslast 30 patents

VOID-FREE STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

ENHANCED MOBILITY IN SEMICONDUCTOR DEVICES

SILICON CARBIDE TRANSISTOR WITH CHANNEL COUNTER-DOPING AND POCKET-D...

INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGY

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

GATE ALL AROUND BACKSIDE POWER RAIL WITH DIFFUSION BREAK

GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACK...

GATE ALL AROUND TRANSISTOR ARCHITECTURE WITH FILL-IN DIELECTRIC MAT...

SOURCE DRAIN FORMATION IN GATE ALL AROUND TRANSISTOR

BACKSIDE POWER RAIL TO DEEP VIAS

SELF-ALIGNED WIDE BACKSIDE POWER RAIL CONTACTS TO MULTIPLE TRANSIST...

METHOD OF ULTRA THINNING OF WAFER

GRADIENT DOPING EPITAXY IN SUPERJUNCTION TO IMPROVE BREAKDOWN VOLTAGE

GRADED DOPING IN POWER DEVICES

GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR

AIRGAP FORMATION PROCESSES

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

DOPED THROUGH-CONTACT STRUCTURES

AIRGAP FORMATION PROCESSES