Ashok Challa

Person

Salt Lake City, UT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integrated transistor and resistor-diode-capacitor snubber
- Patent number 12,051,967
- Issue date Jul 30, 2024
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Dean E. Probst
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 10,868,113
- Issue date Dec 15, 2020
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Device including a sidewall Schottky interface
- Patent number 10,396,216
- Issue date Aug 27, 2019
- Semiconductor Components Industries, LLC
- Yi Su
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 9,748,329
- Issue date Aug 29, 2017
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Junction-less insulated gate current limiter device
- Patent number 9,679,890
- Issue date Jun 13, 2017
- Fairchild Semiconductor Corporation
- Tirthajyoti Sarkar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 9,391,193
- Issue date Jul 12, 2016
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 9,293,526
- Issue date Mar 22, 2016
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Direct-drain trench FET with source and drain isolation
- Patent number 9,018,700
- Issue date Apr 28, 2015
- Fairchild Semiconductor Corporation
- Ashok Challa
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,963,212
- Issue date Feb 24, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods related to power semiconductor devices with thick bottom ox...
- Patent number 8,936,985
- Issue date Jan 20, 2015
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Shielded gate field effect transistors
- Patent number 8,803,207
- Issue date Aug 12, 2014
- Fairchild Semiconductor Corporation
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having termination structures
- Patent number 8,786,045
- Issue date Jul 22, 2014
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Field effect transistor with gated and non-gated trenches
- Patent number 8,742,401
- Issue date Jun 3, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FET device having ultra-low on-resistance and low gate charge
- Patent number 8,710,584
- Issue date Apr 29, 2014
- Fairchild Semiconductor Corporation
- Izak Bencuya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET device with thick trench bottom oxide
- Patent number 8,598,654
- Issue date Dec 3, 2013
- Fairchild Semiconductor Corporation
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistor with source, heavy body region and shielded...
- Patent number 8,592,895
- Issue date Nov 26, 2013
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,564,024
- Issue date Oct 22, 2013
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,304,829
- Issue date Nov 6, 2012
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Synchronous buck converter using shielded gate field effect transis...
- Patent number 8,193,570
- Issue date Jun 5, 2012
- Fairchild Semiconductor Corporation
- Steven Sapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench-based power semiconductor devices with increased breakdown v...
- Patent number 8,193,581
- Issue date Jun 5, 2012
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of making power semiconductor devices with thick bottom oxi...
- Patent number 8,143,124
- Issue date Mar 27, 2012
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Method of forming a FET having ultra-low on-resistance and low gate...
- Patent number 8,101,484
- Issue date Jan 24, 2012
- Fairchild Semiconductor Corporation
- Izak Bencuya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
3D channel architecture for semiconductor devices
- Patent number 8,072,027
- Issue date Dec 6, 2011
- Fairchild Semiconductor Corporation
- Suku Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trenched shield gate power semiconductor devices and methods of man...
- Patent number 7,982,265
- Issue date Jul 19, 2011
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Power semiconductor devices having termination structures and metho...
- Patent number 7,855,415
- Issue date Dec 21, 2010
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Grant
Structure and method for improving shielded gate field effect trans...
- Patent number 7,768,064
- Issue date Aug 3, 2010
- Fairchild Semiconductor Corporation
- Steven Sapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for forming a shielded gate field effect trans...
- Patent number 7,767,524
- Issue date Aug 3, 2010
- Fairchild Semiconductor Corporatiion
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming a FET having ultra-low on-resistance and low gate...
- Patent number 7,745,289
- Issue date Jun 29, 2010
- Fairchild Semiconductor Corporation
- Izak Bencuya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming high density trench FET with integrated Schottky...
- Patent number 7,713,822
- Issue date May 11, 2010
- Fairchild Semiconductor Corporation
- Paul Thorup
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices and methods of manufacture
- Patent number 7,638,841
- Issue date Dec 29, 2009
- Fairchild Semiconductor Corporation
- Ashok Challa
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATED RESISTOR-TRANSISTOR-CAPACITOR SNUBBER
- Publication number 20230403003
- Publication date Dec 14, 2023
- SEMICONDUCTOR COMPONENTS INDUSTRIES, LLC
- Jaume ROIG-GUITART
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED TRANSISTOR AND RESISTOR-DIODE-CAPACITOR SNUBBER
- Publication number 20220407411
- Publication date Dec 22, 2022
- Semiconductor Components Industries, LLC
- Dean E. PROBST
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DEVICE INCLUDING A SIDEWALL SCHOTTKY INTERFACE
- Publication number 20180323273
- Publication date Nov 8, 2018
- Semiconductor Components Industries, LLC
- Yi SU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20180012958
- Publication date Jan 11, 2018
- FAIRCHILD SEMICONDUCTOR CORPORATION
- Joseph A. YEDINAK
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20150206937
- Publication date Jul 23, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20150194521
- Publication date Jul 9, 2015
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
JUNCTION-LESS INSULATED GATE CURRENT LIMITER DEVICE
- Publication number 20150043114
- Publication date Feb 12, 2015
- Fairchild Semiconductor Corporation
- Tirthajyoti SARKAR
- H02 - GENERATION CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
Information Patent Application
DIRECT-DRAIN TRENCH FET WITH SOURCE AND DRAIN ISOLATION
- Publication number 20140264567
- Publication date Sep 18, 2014
- Fairchild Semiconductor Corporation
- Ashok CHALLA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTOR WITH GATED AND NON-GATED TRENCHES
- Publication number 20140054691
- Publication date Feb 27, 2014
- Fairchild Semiconductor Corporation
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20140048869
- Publication date Feb 20, 2014
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...
- Publication number 20140042532
- Publication date Feb 13, 2014
- Fairchild Semiconductor Corporation
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET DEVICE WITH THICK TRENCH BOTTOM OXIDE
- Publication number 20120235230
- Publication date Sep 20, 2012
- Chanho Park
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...
- Publication number 20120220091
- Publication date Aug 30, 2012
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
Method of Forming a FET Having Ultra-low On-resistance and Low Gate...
- Publication number 20120171828
- Publication date Jul 5, 2012
- Izak Bencuya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor with self-aligned source and heavy body reg...
- Publication number 20110303975
- Publication date Dec 15, 2011
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Shielded Gate Field Effect Transistors
- Publication number 20110212586
- Publication date Sep 1, 2011
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Synchronous buck converter using shielded gate field effect transis...
- Publication number 20110163732
- Publication date Jul 7, 2011
- Steven Sapp
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Devices Having Termination Structures
- Publication number 20110001189
- Publication date Jan 6, 2011
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...
Information Patent Application
3D CHANNEL ARCHITECTURE FOR SEMICONDUCTOR DEVICES
- Publication number 20100308402
- Publication date Dec 9, 2010
- Suku Kim
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field Effect Transistor with Self-aligned Source and Heavy Body Reg...
- Publication number 20100258855
- Publication date Oct 14, 2010
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a FET Having Ultra-low On-resistance and Low Gate...
- Publication number 20100258864
- Publication date Oct 14, 2010
- Izak Bencuya
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Based Power Semiconductor Devices with Increased Breakdown V...
- Publication number 20100140697
- Publication date Jun 10, 2010
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Based Power Semiconductor Devices With Increased Breakdown V...
- Publication number 20100140695
- Publication date Jun 10, 2010
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Trench-Based Power Semiconductor Devices with Increased Breakdown V...
- Publication number 20100140689
- Publication date Jun 10, 2010
- Joseph A. Yedinak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method and Structure for Forming a Shielded Gate Field Effect Trans...
- Publication number 20100038708
- Publication date Feb 18, 2010
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming a Shielded Gate Field Effect Transistor
- Publication number 20090191678
- Publication date Jul 30, 2009
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method for Forming Shielded Gate Field Effect Transistor Using Spacers
- Publication number 20090111231
- Publication date Apr 30, 2009
- Thomas E. Grebs
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of Forming High Density Trench FET with Integrated Schottky...
- Publication number 20090035900
- Publication date Feb 5, 2009
- Paul Thorup
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Shielded Gate Field Effect Transistor
- Publication number 20080258213
- Publication date Oct 23, 2008
- Hamza Yilmaz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power Semiconductor Devices with Barrier Layer to Reduce Substrate...
- Publication number 20080197407
- Publication date Aug 21, 2008
- Ashok Challa
- Y02 - TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMA...

Ashok Challa

Person

Patents Grantslast 30 patents

Integrated transistor and resistor-diode-capacitor snubber

Trench-based power semiconductor devices with increased breakdown v...

Device including a sidewall Schottky interface

Trench-based power semiconductor devices with increased breakdown v...

Junction-less insulated gate current limiter device

Trench-based power semiconductor devices with increased breakdown v...

Trench-based power semiconductor devices with increased breakdown v...

Direct-drain trench FET with source and drain isolation

Trench-based power semiconductor devices with increased breakdown v...

Methods related to power semiconductor devices with thick bottom ox...

Shielded gate field effect transistors

Power semiconductor devices having termination structures

Field effect transistor with gated and non-gated trenches

FET device having ultra-low on-resistance and low gate charge

MOSFET device with thick trench bottom oxide

Field effect transistor with source, heavy body region and shielded...

Trench-based power semiconductor devices with increased breakdown v...

Trench-based power semiconductor devices with increased breakdown v...

Synchronous buck converter using shielded gate field effect transis...

Trench-based power semiconductor devices with increased breakdown v...

Methods of making power semiconductor devices with thick bottom oxi...

Method of forming a FET having ultra-low on-resistance and low gate...

3D channel architecture for semiconductor devices

Trenched shield gate power semiconductor devices and methods of man...

Power semiconductor devices having termination structures and metho...

Structure and method for improving shielded gate field effect trans...

Method and structure for forming a shielded gate field effect trans...

Method of forming a FET having ultra-low on-resistance and low gate...

Method of forming high density trench FET with integrated Schottky...

Power semiconductor devices and methods of manufacture

Patents Applicationslast 30 patents

INTEGRATED RESISTOR-TRANSISTOR-CAPACITOR SNUBBER

INTEGRATED TRANSISTOR AND RESISTOR-DIODE-CAPACITOR SNUBBER

DEVICE INCLUDING A SIDEWALL SCHOTTKY INTERFACE

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

JUNCTION-LESS INSULATED GATE CURRENT LIMITER DEVICE

DIRECT-DRAIN TRENCH FET WITH SOURCE AND DRAIN ISOLATION

FIELD EFFECT TRANSISTOR WITH GATED AND NON-GATED TRENCHES

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

TRENCH-BASED POWER SEMICONDUCTOR DEVICES WITH INCREASED BREAKDOWN V...

MOSFET DEVICE WITH THICK TRENCH BOTTOM OXIDE

METHODS OF MAKING POWER SEMICONDUCTOR DEVICES WITH THICK BOTTOM OXI...

Method of Forming a FET Having Ultra-low On-resistance and Low Gate...

Field effect transistor with self-aligned source and heavy body reg...

Method for Forming Shielded Gate Field Effect Transistors

Synchronous buck converter using shielded gate field effect transis...

Power Semiconductor Devices Having Termination Structures

3D CHANNEL ARCHITECTURE FOR SEMICONDUCTOR DEVICES

Field Effect Transistor with Self-aligned Source and Heavy Body Reg...

Method of Forming a FET Having Ultra-low On-resistance and Low Gate...

Trench-Based Power Semiconductor Devices with Increased Breakdown V...

Trench-Based Power Semiconductor Devices With Increased Breakdown V...

Trench-Based Power Semiconductor Devices with Increased Breakdown V...

Method and Structure for Forming a Shielded Gate Field Effect Trans...

Method of Forming a Shielded Gate Field Effect Transistor

Method for Forming Shielded Gate Field Effect Transistor Using Spacers

Method of Forming High Density Trench FET with Integrated Schottky...

Shielded Gate Field Effect Transistor

Power Semiconductor Devices with Barrier Layer to Reduce Substrate...