Atsushi Kurobe

Person

Yamato-shi, JP

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device and method of manufacturing substrate
- Patent number 6,917,096
- Issue date Jul 12, 2005
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of manufacturing a substrate using an SiGe layer
- Patent number 6,607,948
- Issue date Aug 19, 2003
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and method for manufacturing the same
- Patent number 6,369,438
- Issue date Apr 9, 2002
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices and methods for producing semiconductor devices
- Patent number 6,326,667
- Issue date Dec 4, 2001
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device and memory device
- Patent number 6,191,432
- Issue date Feb 20, 2001
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Light emitting semiconductor device using nanocrystals
- Patent number 6,157,047
- Issue date Dec 5, 2000
- Kabushiki Kaisha Toshiba
- Shinobu Fujita
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor memory device having multilayer group IV nanocrystal...
- Patent number 6,060,743
- Issue date May 9, 2000
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Quantum dot memory cell
- Patent number 5,923,046
- Issue date Jul 13, 1999
- Kabushiki Kaisha Toshiba
- Tsutomu Tezuka
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Si-SiGe semiconductor device and method of fabricating the same
- Patent number 5,847,419
- Issue date Dec 8, 1998
- Kabushiki Kaisha Toshiba
- Seiji Imai
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device with multi-directional reflector arrange...
- Patent number 5,432,812
- Issue date Jul 11, 1995
- Kabushiki Kaisha Toshiba
- Atsushi Kurobe
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Dry etching method
- Patent number 5,304,514
- Issue date Apr 19, 1994
- Kabushiki Kaisha Toshiba
- Tohru Nishibe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor laser device with multi-directional reflector arrange...
- Patent number 5,253,262
- Issue date Oct 12, 1993
- Kabushiki Kaisha Toshiba
- Atsushi Kurobe
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of manufacturing an embedded type semiconductor laser
- Patent number 4,810,670
- Issue date Mar 7, 1989
- Kabushiki Kaisha Toshiba
- Hideto Furuyama
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Light emitting semiconductor device
- Patent number 4,701,774
- Issue date Oct 20, 1987
- Kabushiki Kaisha Toshiba
- Paul W. A. McIlroy
- B82 - NANO-TECHNOLOGY

Patents Applicationslast 30 patents

Information Patent Application
Semiconductor device and method of manufacturing substrate
- Publication number 20040070051
- Publication date Apr 15, 2004
- Kabushiki Kaisha Toshiba
- Naoharu Sugiyama
- H01 - BASIC ELECTRIC ELEMENTS

Atsushi Kurobe

Person

Patents Grantslast 30 patents

Semiconductor device and method of manufacturing substrate

Method of manufacturing a substrate using an SiGe layer

Semiconductor device and method for manufacturing the same

Semiconductor devices and methods for producing semiconductor devices

Semiconductor device and memory device

Light emitting semiconductor device using nanocrystals

Semiconductor memory device having multilayer group IV nanocrystal...

Quantum dot memory cell

Si-SiGe semiconductor device and method of fabricating the same

Semiconductor laser device with multi-directional reflector arrange...

Dry etching method

Semiconductor laser device with multi-directional reflector arrange...

Method of manufacturing an embedded type semiconductor laser

Light emitting semiconductor device

Patents Applicationslast 30 patents

Semiconductor device and method of manufacturing substrate