Balaji Kannan

Person

Fishkill, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Short channel and long channel devices
- Patent number 10,741,668
- Issue date Aug 11, 2020
- GLOBALFOUNDRIES Inc.
- Bala Haran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming gate structure with undercut region and resulting...
- Patent number 10,727,133
- Issue date Jul 28, 2020
- GLOBALFOUNDRIES Inc.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut inside replacement metal gate trench to mitigate N-P proximity...
- Patent number 10,658,363
- Issue date May 19, 2020
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cut inside replacement metal gate trench to mitigate N-P proximity...
- Patent number 10,446,550
- Issue date Oct 15, 2019
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structure to form high K metal gate stack with single w...
- Patent number 10,395,993
- Issue date Aug 27, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective titanium nitride deposition using oxides of lanthanum masks
- Patent number 10,332,747
- Issue date Jun 25, 2019
- GLOBALFOUNDRIES Inc.
- Koji Watanabe
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Methods for making robust replacement metal gates and multi-thresho...
- Patent number 10,170,373
- Issue date Jan 1, 2019
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for formation of replacement metal gate field...
- Patent number 10,062,618
- Issue date Aug 28, 2018
- GLOBALFOUNDRIES, INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of multi threshold-voltage devices
- Patent number 10,020,202
- Issue date Jul 10, 2018
- GLOBALFOUNDRIES Inc.
- Donghun Kang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,997,361
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,997,610
- Issue date Jun 12, 2018
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning dopant films in high-k dielectrics in a soft m...
- Patent number 9,824,930
- Issue date Nov 21, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor devices with varying threshold voltage and fabricatio...
- Patent number 9,748,145
- Issue date Aug 29, 2017
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FIN...
- Patent number 9,741,720
- Issue date Aug 22, 2017
- GLOBALFOUNDRIES Inc.
- Shahab Siddiqui
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning dopant films in high-k dielectrics in a soft m...
- Patent number 9,721,842
- Issue date Aug 1, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors having multiple effective work functions
- Patent number 9,691,662
- Issue date Jun 27, 2017
- GLOBALFOUNDRIES Inc.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,613,870
- Issue date Apr 4, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate stack formed with interrupted deposition processes and laser a...
- Patent number 9,613,866
- Issue date Apr 4, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and structure to form high K metal gate stack with single w...
- Patent number 9,515,164
- Issue date Dec 6, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors having multiple effective work functions
- Patent number 9,484,427
- Issue date Nov 1, 2016
- GLOBALFOUNDRIES Inc.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning dopant films in high-K dielectrics in a soft m...
- Patent number 9,472,419
- Issue date Oct 18, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming replacement gate PFET having TiALCO layer for imp...
- Patent number 9,449,887
- Issue date Sep 20, 2016
- GLOBALFOUNDRIES Inc.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and structure for transistors using gate stack dopants with...
- Patent number 9,418,995
- Issue date Aug 16, 2016
- GLOBALFOUNDRIES Inc.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of patterning dopant films in high-k dielectrics in a soft m...
- Patent number 9,330,938
- Issue date May 3, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHOD OF FORMING GATE STRUCTURE WITH UNDERCUT REGION AND RESULTING...
- Publication number 20200091005
- Publication date Mar 19, 2020
- GLOBALFOUNDRIES INC.
- Qun Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY...
- Publication number 20190393221
- Publication date Dec 26, 2019
- GLOBALFOUNDRIES INC.
- Balaji KANNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL
- Publication number 20190318966
- Publication date Oct 17, 2019
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY...
- Publication number 20190115346
- Publication date Apr 18, 2019
- GLOBALFOUNDRIES INC.
- Balaji KANNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK PROCESSES AND STRUCTURES
- Publication number 20190096679
- Publication date Mar 28, 2019
- GLOBALFOUNDRIES INC.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT METAL GATE MODULE
- Publication number 20190027578
- Publication date Jan 24, 2019
- GLOBALFOUNDRIES Inc.
- Bala HARAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FABRICATION OF MULTI THRESHOLD-VOLTAGE DEVICES
- Publication number 20170301551
- Publication date Oct 19, 2017
- GLOBALFOUNDRIES INC.
- Donghun KANG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICES WITH VARYING THRESHOLD VOLTAGE AND FABRICATIO...
- Publication number 20170250117
- Publication date Aug 31, 2017
- GLOBALFOUNDRIES INC.
- Balaji KANNAN
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170140940
- Publication date May 18, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170133477
- Publication date May 11, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS
- Publication number 20170047255
- Publication date Feb 16, 2017
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...
- Publication number 20170025315
- Publication date Jan 26, 2017
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170005006
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...
- Publication number 20170005003
- Publication date Jan 5, 2017
- International Business Machines Corporation
- Takashi ANDO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...
- Publication number 20160351452
- Publication date Dec 1, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR FORMATION OF REPLACEMENT METAL GATE FIELD...
- Publication number 20160351453
- Publication date Dec 1, 2016
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...
- Publication number 20160190015
- Publication date Jun 30, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
REPLACEMENT GATE PFET MATERIALS HAVING IMPROVED NBTI PERFORMANCE
- Publication number 20160163814
- Publication date Jun 9, 2016
- GLOBALFOUNDRIES INC.
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD AND STRUCTURE FOR TRANSISTORS USING GATE STACK DOPANTS WITH...
- Publication number 20160104707
- Publication date Apr 14, 2016
- GLOBALFOUNDRIES INC.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR MAKING ROBUST REPLACEMENT METAL GATES AND MULTI-THRESHO...
- Publication number 20160086860
- Publication date Mar 24, 2016
- GLOBALFOUNDRIES INC.
- Balaji Kannan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...
- Publication number 20160049337
- Publication date Feb 18, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...
- Publication number 20160027664
- Publication date Jan 28, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS
- Publication number 20160005831
- Publication date Jan 7, 2016
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...
- Publication number 20150255463
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN Field Effect Transistors Having Multiple Threshold Voltages
- Publication number 20150021699
- Publication date Jan 22, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Intrinsic Channel Planar Field Effect Transistors Having Multiple T...
- Publication number 20150021698
- Publication date Jan 22, 2015
- International Business Machines Corporation
- Takashi Ando
- H01 - BASIC ELECTRIC ELEMENTS

Balaji Kannan

Person

Patents Grantslast 30 patents

Short channel and long channel devices

Method of forming gate structure with undercut region and resulting...

Cut inside replacement metal gate trench to mitigate N-P proximity...

Cut inside replacement metal gate trench to mitigate N-P proximity...

Methods and structure to form high K metal gate stack with single w...

Selective titanium nitride deposition using oxides of lanthanum masks

Methods for making robust replacement metal gates and multi-thresho...

Method and structure for formation of replacement metal gate field...

Fabrication of multi threshold-voltage devices

Gate stack formed with interrupted deposition processes and laser a...

Gate stack formed with interrupted deposition processes and laser a...

Method of patterning dopant films in high-k dielectrics in a soft m...

Semiconductor devices with varying threshold voltage and fabricatio...

Higher ‘K’ gate dielectric cap for replacement metal gate (RMG) FIN...

Method of patterning dopant films in high-k dielectrics in a soft m...

Field effect transistors having multiple effective work functions

Gate stack formed with interrupted deposition processes and laser a...

Gate stack formed with interrupted deposition processes and laser a...

Methods and structure to form high K metal gate stack with single w...

Field effect transistors having multiple effective work functions

Method of patterning dopant films in high-K dielectrics in a soft m...

Method of forming replacement gate PFET having TiALCO layer for imp...

Method and structure for transistors using gate stack dopants with...

Method of patterning dopant films in high-k dielectrics in a soft m...

Patents Applicationslast 30 patents

METHOD OF FORMING GATE STRUCTURE WITH UNDERCUT REGION AND RESULTING...

CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY...

HIGH K METAL GATE STACK WITH SINGLE WORK-FUNCTION METAL

CUT INSIDE REPLACEMENT METAL GATE TRENCH TO MITIGATE N-P PROXIMITY...

GATE STACK PROCESSES AND STRUCTURES

REPLACEMENT METAL GATE MODULE

FABRICATION OF MULTI THRESHOLD-VOLTAGE DEVICES

SEMICONDUCTOR DEVICES WITH VARYING THRESHOLD VOLTAGE AND FABRICATIO...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS

METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

GATE STACK FORMED WITH INTERRUPTED DEPOSITION PROCESSES AND LASER A...

METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...

METHOD AND STRUCTURE FOR FORMATION OF REPLACEMENT METAL GATE FIELD...

METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...

REPLACEMENT GATE PFET MATERIALS HAVING IMPROVED NBTI PERFORMANCE

METHOD AND STRUCTURE FOR TRANSISTORS USING GATE STACK DOPANTS WITH...

METHODS FOR MAKING ROBUST REPLACEMENT METAL GATES AND MULTI-THRESHO...

METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...

METHOD OF PATTERNING DOPANT FILMS IN HIGH-K DIELECTRICS IN A SOFT M...

FIELD EFFECT TRANSISTORS HAVING MULTIPLE EFFECTIVE WORK FUNCTIONS

METHODS AND STRUCTURE TO FORM HIGH K METAL GATE STACK WITH SINGLE W...

FIN Field Effect Transistors Having Multiple Threshold Voltages

Intrinsic Channel Planar Field Effect Transistors Having Multiple T...