Balasubramanian P. Haran

Person

Albany, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device replacement metal gate with gate cut last in RMG
- Patent number 10,381,458
- Issue date Aug 13, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device formed by a replacement metal-gate method including a...
- Patent number 10,177,240
- Issue date Jan 8, 2019
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structures
- Patent number 9,548,356
- Issue date Jan 17, 2017
- GLOBALFOUNDRIES Inc.
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation by silicon-on-nothing and method o...
- Patent number 9,478,549
- Issue date Oct 25, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device
- Patent number 9,406,570
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated passive devices for finFET technologies
- Patent number 9,406,665
- Issue date Aug 2, 2016
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple threshold voltage devices for complementary...
- Patent number 9,406,679
- Issue date Aug 2, 2016
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Suspended ring-shaped nanowire structure
- Patent number 9,406,790
- Issue date Aug 2, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Silicon-on-insulator transistor with self-aligned borderless source...
- Patent number 9,368,590
- Issue date Jun 14, 2016
- GLOBALFOUNDRIES Inc.
- Susan S. Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with deep trench thermal conduction
- Patent number 9,349,838
- Issue date May 24, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with deep trench thermal conduction
- Patent number 9,331,177
- Issue date May 3, 2016
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving device performance using epitaxially grown sil...
- Patent number 9,331,174
- Issue date May 3, 2016
- GLOBALFOUNDRIES Inc.
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS with dual raised source and drain for NMOS and PMOS
- Patent number 9,299,719
- Issue date Mar 29, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Hybrid orientation fin field effect transistor and planar field eff...
- Patent number 9,275,911
- Issue date Mar 1, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Dummy fin formation by gas cluster ion beam
- Patent number 9,269,629
- Issue date Feb 23, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS with dual raised source and drain for NMOS and PMOS
- Patent number 9,263,465
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS with dual raised source and drain for NMOS and PMOS
- Patent number 9,263,466
- Issue date Feb 16, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned contact structure for replacement metal gate
- Patent number 9,257,531
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES Inc.
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing process for finFET device
- Patent number 9,257,350
- Issue date Feb 9, 2016
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor structure with deep trench thermal conduction
- Patent number 9,252,242
- Issue date Feb 2, 2016
- International Business Machines Corporation
- Theodorus Eduardus Standaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Uniform finFET gate height
- Patent number 9,245,965
- Issue date Jan 26, 2016
- GLOBALFOUNDRIES Inc.
- Balasubramanian S. Haran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET with dielectric isolation by silicon-on-nothing and method o...
- Patent number 9,219,068
- Issue date Dec 22, 2015
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Undercut insulating regions for silicon-on-insulator device
- Patent number 9,214,378
- Issue date Dec 15, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET device
- Patent number 9,190,465
- Issue date Nov 17, 2015
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Shallow trench isolation structures
- Patent number 9,190,313
- Issue date Nov 17, 2015
- GlobalFoundries U.S. 2 LLC
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fin isolation in multi-gate field effect transistors
- Patent number 9,178,019
- Issue date Nov 3, 2015
- GLOBALFOUNDRIES Inc.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple threshold voltage devices for complementary...
- Patent number 9,093,558
- Issue date Jul 28, 2015
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated passive devices for FinFET technologies
- Patent number 9,093,564
- Issue date Jul 28, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS with dual raised source and drain for NMOS and PMOS
- Patent number 9,087,741
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
CMOS with dual raised source and drain for NMOS and PMOS
- Patent number 9,087,921
- Issue date Jul 21, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE REPLACEMENT METAL GATE WITH GATE CUT LAST IN RMG
- Publication number 20170084463
- Publication date Mar 23, 2017
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE REPLACEMENT METAL GATE WITH GATE CUT LAST IN RMG
- Publication number 20170084723
- Publication date Mar 23, 2017
- International Business Machines Corporation
- Andrew M. Greene
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HYBRID ORIENTATION FIN FIELD EFFECT TRANSISTOR AND PLANAR FIELD EFF...
- Publication number 20160126352
- Publication date May 5, 2016
- GLOBALFOUNDRIES INC.
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION BY SILICON-ON-NOTHING AND METHOD O...
- Publication number 20150340288
- Publication date Nov 26, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION OF MULTIPLE THRESHOLD VOLTAGE DEVICES FOR COMPLEMENTAR...
- Publication number 20150333065
- Publication date Nov 19, 2015
- International Business Machines Corporation
- Lisa F. Edge
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SHALLOW TRENCH ISOLATION STRUCTURES
- Publication number 20150255538
- Publication date Sep 10, 2015
- International Business Machines Corporation
- Bruce B. Doris
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE
- Publication number 20150235909
- Publication date Aug 20, 2015
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET DEVICE
- Publication number 20150228672
- Publication date Aug 13, 2015
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PASSIVE DEVICES FOR FINFET TECHNOLOGIES
- Publication number 20150221631
- Publication date Aug 6, 2015
- International Business Machines Corporation
- Thomas N. Adam
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FIN ISOLATION IN MULTI-GATE FIELD EFFECT TRANSISTORS
- Publication number 20150171164
- Publication date Jun 18, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BORDERLESS CONTACT FOR ULTRA-THIN BODY DEVICES
- Publication number 20150155353
- Publication date Jun 4, 2015
- International Business Machines Corporation
- Su Chen Fan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS WITH DUAL RAISED SOURCE AND DRAIN FOR NMOS AND PMOS
- Publication number 20150147853
- Publication date May 28, 2015
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS WITH DUAL RAISED SOURCE AND DRAIN FOR NMOS AND PMOS
- Publication number 20150137147
- Publication date May 21, 2015
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS WITH DUAL RAISED SOURCE AND DRAIN FOR NMOS AND PMOS
- Publication number 20150140744
- Publication date May 21, 2015
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS WITH DUAL RAISED SOURCE AND DRAIN FOR NMOS AND PMOS
- Publication number 20150140743
- Publication date May 21, 2015
- International Business Machines Corporation
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DUMMY FIN FORMATION BY GAS CLUSTER ION BEAM
- Publication number 20150064874
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION BY SILICON-ON-NOTHING AND METHOD O...
- Publication number 20150064855
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION
- Publication number 20150064856
- Publication date Mar 5, 2015
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION
- Publication number 20150054082
- Publication date Feb 26, 2015
- Intemational Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SUSPENDED NANOWIRE STRUCTURE
- Publication number 20150053913
- Publication date Feb 26, 2015
- International Business Machines Corporation
- Kangguo Cheng
- B82 - NANO-TECHNOLOGY
Information Patent Application
FINFET WITH SELF-ALIGNED PUNCHTHROUGH STOPPER
- Publication number 20150054033
- Publication date Feb 26, 2015
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELF-ALIGNED CONTACT STRUCTURE FOR REPLACEMENT METAL GATE
- Publication number 20140377927
- Publication date Dec 25, 2014
- Soon-Cheon Seo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
UNIFORM FINFET GATE HEIGHT
- Publication number 20140319611
- Publication date Oct 30, 2014
- Balasubramanian S. Haran
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
BULK FIN-FIELD EFFECT TRANSISTORS WITH WELL DEFINED ISOLATION
- Publication number 20140295647
- Publication date Oct 2, 2014
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION
- Publication number 20140284717
- Publication date Sep 25, 2014
- International Business Machines Corporation
- Theodorus Eduardus Standaert
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED PASSIVE DEVICES FOR FINFET TECHNOLOGIES
- Publication number 20140284760
- Publication date Sep 25, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED FINFET DEVICES
- Publication number 20140264496
- Publication date Sep 18, 2014
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS ENHANCED FINFET DEVICES
- Publication number 20140264598
- Publication date Sep 18, 2014
- Kangguo CHENG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FINFET WITH DIELECTRIC ISOLATION BY SILICON-ON-NOTHING AND METHOD O...
- Publication number 20140191321
- Publication date Jul 10, 2014
- International Business Machines Corporation
- Kangguo Cheng
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MOSFET INCLUDING ASYMMETRIC SOURCE AND DRAIN REGIONS
- Publication number 20140187007
- Publication date Jul 3, 2014
- International Business Machines Corporation
- KANGGUO CHENG
- H01 - BASIC ELECTRIC ELEMENTS

Balasubramanian P. Haran

Person

Patents Grantslast 30 patents

Semiconductor device replacement metal gate with gate cut last in RMG

FinFET device formed by a replacement metal-gate method including a...

Shallow trench isolation structures

FinFET with dielectric isolation by silicon-on-nothing and method o...

FinFET device

Integrated passive devices for finFET technologies

Integration of multiple threshold voltage devices for complementary...

Suspended ring-shaped nanowire structure

Silicon-on-insulator transistor with self-aligned borderless source...

Semiconductor structure with deep trench thermal conduction

Semiconductor structure with deep trench thermal conduction

Method for improving device performance using epitaxially grown sil...

CMOS with dual raised source and drain for NMOS and PMOS

Hybrid orientation fin field effect transistor and planar field eff...

Dummy fin formation by gas cluster ion beam

CMOS with dual raised source and drain for NMOS and PMOS

CMOS with dual raised source and drain for NMOS and PMOS

Self-aligned contact structure for replacement metal gate

Manufacturing process for finFET device

Semiconductor structure with deep trench thermal conduction

Uniform finFET gate height

FinFET with dielectric isolation by silicon-on-nothing and method o...

Undercut insulating regions for silicon-on-insulator device

FinFET device

Shallow trench isolation structures

Fin isolation in multi-gate field effect transistors

Integration of multiple threshold voltage devices for complementary...

Integrated passive devices for FinFET technologies

CMOS with dual raised source and drain for NMOS and PMOS

CMOS with dual raised source and drain for NMOS and PMOS

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE REPLACEMENT METAL GATE WITH GATE CUT LAST IN RMG

SEMICONDUCTOR DEVICE REPLACEMENT METAL GATE WITH GATE CUT LAST IN RMG

HYBRID ORIENTATION FIN FIELD EFFECT TRANSISTOR AND PLANAR FIELD EFF...

FINFET WITH DIELECTRIC ISOLATION BY SILICON-ON-NOTHING AND METHOD O...

INTEGRATION OF MULTIPLE THRESHOLD VOLTAGE DEVICES FOR COMPLEMENTAR...

SHALLOW TRENCH ISOLATION STRUCTURES

FINFET DEVICE

FINFET DEVICE

INTEGRATED PASSIVE DEVICES FOR FINFET TECHNOLOGIES

FIN ISOLATION IN MULTI-GATE FIELD EFFECT TRANSISTORS

BORDERLESS CONTACT FOR ULTRA-THIN BODY DEVICES

CMOS WITH DUAL RAISED SOURCE AND DRAIN FOR NMOS AND PMOS

CMOS WITH DUAL RAISED SOURCE AND DRAIN FOR NMOS AND PMOS

CMOS WITH DUAL RAISED SOURCE AND DRAIN FOR NMOS AND PMOS

CMOS WITH DUAL RAISED SOURCE AND DRAIN FOR NMOS AND PMOS

DUMMY FIN FORMATION BY GAS CLUSTER ION BEAM

FINFET WITH DIELECTRIC ISOLATION BY SILICON-ON-NOTHING AND METHOD O...

SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION

SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION

SUSPENDED NANOWIRE STRUCTURE

FINFET WITH SELF-ALIGNED PUNCHTHROUGH STOPPER

SELF-ALIGNED CONTACT STRUCTURE FOR REPLACEMENT METAL GATE

UNIFORM FINFET GATE HEIGHT

BULK FIN-FIELD EFFECT TRANSISTORS WITH WELL DEFINED ISOLATION

SEMICONDUCTOR STRUCTURE WITH DEEP TRENCH THERMAL CONDUCTION

INTEGRATED PASSIVE DEVICES FOR FINFET TECHNOLOGIES

STRESS ENHANCED FINFET DEVICES

STRESS ENHANCED FINFET DEVICES

FINFET WITH DIELECTRIC ISOLATION BY SILICON-ON-NOTHING AND METHOD O...

MOSFET INCLUDING ASYMMETRIC SOURCE AND DRAIN REGIONS