Bantval J. Baliga

Person

Raleigh, NC, US

People

Patents Grantslast 30 patents

Information Patent Grant
Power devices having tunable saturation current clamps therein that...
- Patent number 12,094,932
- Issue date Sep 17, 2024
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFET and JBSFET cell topologies with superior high frequenc...
- Patent number 11,276,779
- Issue date Mar 15, 2022
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Monolithically-integrated AC switch having JBSFETs therein with com...
- Patent number 10,804,393
- Issue date Oct 13, 2020
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power MOSFETs with superior high frequency figure-of-merit
- Patent number 10,355,132
- Issue date Jul 16, 2019
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming power semiconductor devices having laterally ext...
- Patent number 7,041,559
- Issue date May 9, 2006
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit power devices having junction barrier controlled...
- Patent number 6,800,897
- Issue date Oct 5, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having laterally extending base shieldi...
- Patent number 6,791,143
- Issue date Sep 14, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices having retrograded-doped transition regions...
- Patent number 6,784,486
- Issue date Aug 31, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices having retrograded-doped transition regions...
- Patent number 6,781,194
- Issue date Aug 24, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming vertical mosfets having trench-based gate electr...
- Patent number 6,764,889
- Issue date Jul 20, 2004
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency (RF) power devices having faraday shield layers the...
- Patent number 6,653,691
- Issue date Nov 25, 2003
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices having trench-based electrodes therein
- Patent number 6,649,975
- Issue date Nov 18, 2003
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical MOSFETs having trench-based gate electrodes within deeper...
- Patent number 6,621,121
- Issue date Sep 16, 2003
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Packaged power devices having vertical power mosfets therein that a...
- Patent number 6,586,833
- Issue date Jul 1, 2003
- Silicon Semiconductor Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
MOSFET devices having linear transfer characteristics when operatin...
- Patent number 6,545,316
- Issue date Apr 8, 2003
- Silicon Wireless Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical power devices having insulated source electrodes in discon...
- Patent number 6,525,372
- Issue date Feb 25, 2003
- Silicon Wireless Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having trench-based gate electrodes and...
- Patent number 6,388,286
- Issue date May 14, 2002
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming power semiconductor devices having tapered trenc...
- Patent number 6,365,462
- Issue date Apr 2, 2002
- Micro-Ohm Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide power devices having trench-based silicon carbide c...
- Patent number 6,313,482
- Issue date Nov 6, 2001
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming power semiconductor devices having T-shaped gate...
- Patent number 6,303,410
- Issue date Oct 16, 2001
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices that utilize tapered trench-based insul...
- Patent number 6,191,447
- Issue date Feb 20, 2001
- Micro-Ohm Corporation
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices that utilize buried insulating regions...
- Patent number 6,075,259
- Issue date Jun 13, 2000
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Bidirectional silicon carbide power devices having voltage supporti...
- Patent number 6,023,078
- Issue date Feb 8, 2000
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Power semiconductor devices having improved high frequency switchin...
- Patent number 5,998,833
- Issue date Dec 7, 1999
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicon carbide semiconductor devices having bur...
- Patent number 5,950,076
- Issue date Sep 7, 1999
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor switching devices having buried gate electrodes and m...
- Patent number 5,912,497
- Issue date Jun 15, 1999
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Static-induction transistors having heterojunction gates and method...
- Patent number 5,753,938
- Issue date May 19, 1998
- North Carolina State University
- Naresh I. Thapar
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide switching devices having near ideal breakdown volta...
- Patent number 5,742,076
- Issue date Apr 21, 1998
- North Carolina State University
- Srikant Sridevan
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming silicon carbide semiconductor devices having bur...
- Patent number 5,681,762
- Issue date Oct 28, 1997
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Depleted base transistor with high forward voltage blocking capability
- Patent number 5,679,966
- Issue date Oct 21, 1997
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Overcurrent Protection Method for Composite Power Semiconductor Swi...
- Publication number 20240195402
- Publication date Jun 13, 2024
- North Carolina State University
- Ajit Kanale
- H03 - BASIC ELECTRONIC CIRCUITRY
Information Patent Application
SEMICONDUCTOR POWER DEVICES HAVING DOPED AND SILICIDED POLYSILICON...
- Publication number 20230011193
- Publication date Jan 12, 2023
- North Carolina State University
- Bantval Jayant Baliga
- G01 - MEASURING TESTING
Information Patent Application
POWER DEVICES HAVING TUNABLE SATURATION CURRENT CLAMPS THEREIN THAT...
- Publication number 20220085171
- Publication date Mar 17, 2022
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power MOSFETs with Superior High Frequency Figure-of-Merit and Meth...
- Publication number 20180269322
- Publication date Sep 20, 2018
- North Carolina State University
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOLID STATE FAULT ISOLATION DEVICES AND METHODS
- Publication number 20140055901
- Publication date Feb 27, 2014
- North Carolina State University
- Woongje Sung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming power semiconductor devices having laterally ext...
- Publication number 20050032291
- Publication date Feb 10, 2005
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices having linear transfer characteristics...
- Publication number 20050001268
- Publication date Jan 6, 2005
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming vertical power devices having trench-based sourc...
- Publication number 20040232479
- Publication date Nov 25, 2004
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices having laterally extending base shieldi...
- Publication number 20040099905
- Publication date May 27, 2004
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming vertical power devices having deep and shallow t...
- Publication number 20040048488
- Publication date Mar 11, 2004
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming vertical mosfets having trench-based gate electr...
- Publication number 20040016963
- Publication date Jan 29, 2004
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices having linear transfer characteristics...
- Publication number 20020185679
- Publication date Dec 12, 2002
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices having laterally extending base shieldi...
- Publication number 20020177277
- Publication date Nov 28, 2002
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Power semiconductor devices having retrograded-doped transition reg...
- Publication number 20020175351
- Publication date Nov 28, 2002
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power devices having insulated source electrodes in discon...
- Publication number 20020057610
- Publication date May 16, 2002
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical power devices having deep and shallow trenches and methods...
- Publication number 20020056884
- Publication date May 16, 2002
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Packaged power devices for radio frequency (RF) applications
- Publication number 20020056872
- Publication date May 16, 2002
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Radio frequency (RF) power devices having faraday shield layers the...
- Publication number 20020056883
- Publication date May 16, 2002
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Vertical MOSFETs having trench-based gate electrodes within deeper...
- Publication number 20020036319
- Publication date Mar 28, 2002
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of forming power semiconductor devices having tapered trenc...
- Publication number 20010000033
- Publication date Mar 15, 2001
- Bantval Jayant Baliga
- H01 - BASIC ELECTRIC ELEMENTS

Bantval J. Baliga

Person

Patents Grantslast 30 patents

Power devices having tunable saturation current clamps therein that...

Power MOSFET and JBSFET cell topologies with superior high frequenc...

Monolithically-integrated AC switch having JBSFETs therein with com...

Power MOSFETs with superior high frequency figure-of-merit

Methods of forming power semiconductor devices having laterally ext...

Integrated circuit power devices having junction barrier controlled...

Power semiconductor devices having laterally extending base shieldi...

Vertical power devices having retrograded-doped transition regions...

Vertical power devices having retrograded-doped transition regions...

Methods of forming vertical mosfets having trench-based gate electr...

Radio frequency (RF) power devices having faraday shield layers the...

Vertical power devices having trench-based electrodes therein

Vertical MOSFETs having trench-based gate electrodes within deeper...

Packaged power devices having vertical power mosfets therein that a...

MOSFET devices having linear transfer characteristics when operatin...

Vertical power devices having insulated source electrodes in discon...

Power semiconductor devices having trench-based gate electrodes and...

Methods of forming power semiconductor devices having tapered trenc...

Silicon carbide power devices having trench-based silicon carbide c...

Methods of forming power semiconductor devices having T-shaped gate...

Power semiconductor devices that utilize tapered trench-based insul...

Power semiconductor devices that utilize buried insulating regions...

Bidirectional silicon carbide power devices having voltage supporti...

Power semiconductor devices having improved high frequency switchin...

Methods of forming silicon carbide semiconductor devices having bur...

Semiconductor switching devices having buried gate electrodes and m...

Static-induction transistors having heterojunction gates and method...

Silicon carbide switching devices having near ideal breakdown volta...

Methods of forming silicon carbide semiconductor devices having bur...

Depleted base transistor with high forward voltage blocking capability

Patents Applicationslast 30 patents

Overcurrent Protection Method for Composite Power Semiconductor Swi...

SEMICONDUCTOR POWER DEVICES HAVING DOPED AND SILICIDED POLYSILICON...

POWER DEVICES HAVING TUNABLE SATURATION CURRENT CLAMPS THEREIN THAT...

Power MOSFETs with Superior High Frequency Figure-of-Merit and Meth...

SOLID STATE FAULT ISOLATION DEVICES AND METHODS

Methods of forming power semiconductor devices having laterally ext...

Power semiconductor devices having linear transfer characteristics...

Methods of forming vertical power devices having trench-based sourc...

Power semiconductor devices having laterally extending base shieldi...

Methods of forming vertical power devices having deep and shallow t...

Methods of forming vertical mosfets having trench-based gate electr...

Power semiconductor devices having linear transfer characteristics...

Power semiconductor devices having laterally extending base shieldi...

Power semiconductor devices having retrograded-doped transition reg...

Vertical power devices having insulated source electrodes in discon...

Vertical power devices having deep and shallow trenches and methods...

Packaged power devices for radio frequency (RF) applications

Radio frequency (RF) power devices having faraday shield layers the...

Vertical MOSFETs having trench-based gate electrodes within deeper...

Methods of forming power semiconductor devices having tapered trenc...