Barbara E. Landini

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New Milford, CT, US

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Patents Grantslast 30 patents

Information Patent Grant
III-V nitride homoepitaxial material of improved quality formed on...
- Patent number 8,212,259
- Issue date Jul 3, 2012
- Cree, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Method of preparing indium phosphide heterojunction bipolar transis...
- Patent number 6,800,879
- Issue date Oct 5, 2004
- Kopin Corporation
- Roger E. Welser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon carbide epitaxial layers grown on substrates offcut towards...
- Patent number 6,641,938
- Issue date Nov 4, 2003
- Advanced Technology Materials, Inc.
- Barbara E. Landini
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
METHOD FOR ACHIEVING IMPROVED EPITAXY QUALITY (SURFACE TEXTURE AND...
- Patent number 6,447,604
- Issue date Sep 10, 2002
- Advanced Technology Materials, Inc.
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Grant
Silicon carbide epitaxial layers grown on substrates offcut towards...
- Patent number 6,329,088
- Issue date Dec 11, 2001
- Advanced Technology Materials, Inc.
- Barbara E. Landini
- C30 - CRYSTAL GROWTH

Patents Applicationslast 30 patents

Information Patent Application
III-V Nitride homoepitaxial material of improved MOVPE epitaxial qu...
- Publication number 20030213964
- Publication date Nov 20, 2003
- Jeffrey S. Flynn
- C30 - CRYSTAL GROWTH
Information Patent Application
Method of preparing indium phosphide heterojunction bipolar transis...
- Publication number 20020125498
- Publication date Sep 12, 2002
- Kopin Corporation
- Roger E. Welser
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon carbide epitaxial layers grown on substrates offcut towards...
- Publication number 20020059898
- Publication date May 23, 2002
- Barbara E. Landini
- C30 - CRYSTAL GROWTH