Barbara Haselden

Person

Cupertino, CA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Nonvolatile memories with tunnel dielectric with chlorine
- Patent number 7,737,487
- Issue date Jun 15, 2010
- ProMOS Technologies Pte. Ltd.
- Zhong Dong
- G11 - INFORMATION STORAGE
Information Patent Grant
Use of TEOS oxides in integrated circuit fabrication processes
- Patent number 7,371,695
- Issue date May 13, 2008
- ProMOS Technologies Pte. Ltd.
- Tai-Peng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Fabrication of semiconductor device exhibiting reduced dielectric l...
- Patent number 7,355,239
- Issue date Apr 8, 2008
- ProMOS Technologies Pte. Ltd.
- Barbara Haselden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of pedestals to fabricate contact openings
- Patent number 7,300,745
- Issue date Nov 27, 2007
- ProMOS Technologies Inc.
- Chia-Shun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Use of multiple etching steps to reduce lateral etch undercut
- Patent number 7,071,115
- Issue date Jul 4, 2006
- ProMOS Technologies Inc.
- Chunchieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of removable shroud by anisotropic plasma etch
- Patent number 7,037,792
- Issue date May 2, 2006
- ProMOS Technologies, Inc.
- John Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Formation of a double gate structure
- Patent number 6,955,964
- Issue date Oct 18, 2005
- ProMOS Technologies, Inc.
- Barbara A. Haselden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low temperature nitridation of amorphous high-K metal-oxide in inte...
- Patent number 6,933,218
- Issue date Aug 23, 2005
- Mosel Vitelic, Inc.
- Tai-Peng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two stage etching of silicon nitride to form a nitride spacer
- Patent number 6,846,730
- Issue date Jan 25, 2005
- ProMOS Technologies Inc.
- Barbara A. Haselden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two stage etching of silicon nitride to form a nitride spacer
- Patent number 6,794,303
- Issue date Sep 21, 2004
- Mosel Vitelic, Inc.
- Barbara A. Haselden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Sidewall protection in fabrication of integrated circuits
- Patent number 6,566,196
- Issue date May 20, 2003
- Mosel Vitelic, Inc.
- Barbara Haselden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for etching with a photoresist mask
- Patent number 6,121,154
- Issue date Sep 19, 2000
- Lam Research Corporation
- Barbara Haselden
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY

Patents Applicationslast 30 patents

Information Patent Application
NONVOLATILE MEMORIES WITH TUNNEL DIELECTRIC WITH CHLORINE
- Publication number 20090303787
- Publication date Dec 10, 2009
- Zhong Dong
- G11 - INFORMATION STORAGE
Information Patent Application
USE OF TEOS OXIDES IN INTEGRATED CIRCUIT FABRICATION PROCESSES
- Publication number 20070290292
- Publication date Dec 20, 2007
- ProMOS Technologies Pte. Ltd.
- Tai-Peng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of TEOS oxides in integrated circuit fabrication processes
- Publication number 20070155189
- Publication date Jul 5, 2007
- ProMOS Technologies Pte. Ltd.
- Tai-Peng Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of multiple etching steps to reduce lateral etch undercut
- Publication number 20060211255
- Publication date Sep 21, 2006
- Chunchieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of removable shroud by anisotropic plasma etch
- Publication number 20050287762
- Publication date Dec 29, 2005
- John Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of pedestals to fabricate contact openings
- Publication number 20050170578
- Publication date Aug 4, 2005
- Chia-Shun Hsiao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Use of multiple etching steps to reduce lateral etch undercut
- Publication number 20050170646
- Publication date Aug 4, 2005
- Chunchieh Huang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Formation of a double gate structure
- Publication number 20050095783
- Publication date May 5, 2005
- Barbara A. Haselden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two stage etching of silicon nitride to form a nitride spacer
- Publication number 20040175955
- Publication date Sep 9, 2004
- Barbara A. Haselden
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Two stage etching of silicon nitride to form a nitride spacer
- Publication number 20040014305
- Publication date Jan 22, 2004
- Barbara A. Haselden
- H01 - BASIC ELECTRIC ELEMENTS

Barbara Haselden

Person

Patents Grantslast 30 patents

Nonvolatile memories with tunnel dielectric with chlorine

Use of TEOS oxides in integrated circuit fabrication processes

Fabrication of semiconductor device exhibiting reduced dielectric l...

Use of pedestals to fabricate contact openings

Use of multiple etching steps to reduce lateral etch undercut

Formation of removable shroud by anisotropic plasma etch

Formation of a double gate structure

Low temperature nitridation of amorphous high-K metal-oxide in inte...

Two stage etching of silicon nitride to form a nitride spacer

Two stage etching of silicon nitride to form a nitride spacer

Sidewall protection in fabrication of integrated circuits

Techniques for etching with a photoresist mask

Patents Applicationslast 30 patents

NONVOLATILE MEMORIES WITH TUNNEL DIELECTRIC WITH CHLORINE

USE OF TEOS OXIDES IN INTEGRATED CIRCUIT FABRICATION PROCESSES

Use of TEOS oxides in integrated circuit fabrication processes

Use of multiple etching steps to reduce lateral etch undercut

Formation of removable shroud by anisotropic plasma etch

Use of pedestals to fabricate contact openings

Use of multiple etching steps to reduce lateral etch undercut

Formation of a double gate structure

Two stage etching of silicon nitride to form a nitride spacer

Two stage etching of silicon nitride to form a nitride spacer