Been-Yih Jin

Person

Lake Oswego, OR, US

People

Patents Grantslast 30 patents

Information Patent Grant
Two-dimensional condensation for uniaxially strained semiconductor...
- Patent number 10,304,929
- Issue date May 28, 2019
- Intel Corporation
- Jack T. Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming non-planar germanium quantum well devices
- Patent number 10,236,369
- Issue date Mar 19, 2019
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 10,141,437
- Issue date Nov 27, 2018
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming non-planar germanium quantum well devices
- Patent number 9,799,759
- Issue date Oct 24, 2017
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Two-dimensional condensation for uniaxially strained semiconductor...
- Patent number 9,711,598
- Issue date Jul 18, 2017
- Intel Corporation
- Jack T. Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 9,691,856
- Issue date Jun 27, 2017
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 9,548,363
- Issue date Jan 17, 2017
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based quantum well devices
- Patent number 9,478,635
- Issue date Oct 25, 2016
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional condensation for uniaxially strained semiconductor...
- Patent number 9,419,140
- Issue date Aug 16, 2016
- Intel Corporation
- Jack T. Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming non-planar germanium quantum well devices
- Patent number 9,263,557
- Issue date Feb 16, 2016
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Germanium-based quantum well devices
- Patent number 9,219,135
- Issue date Dec 22, 2015
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Two-dimensional condensation for uniaxially strained semiconductor...
- Patent number 9,159,835
- Issue date Oct 13, 2015
- Intel Corporation
- Jack T. Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for forming non-planar germanium quantum well devices
- Patent number 9,153,671
- Issue date Oct 6, 2015
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Apparatus and methods for improving parallel conduction in a quantu...
- Patent number 9,048,266
- Issue date Jun 2, 2015
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium and germanium multigate and nanowire structures f...
- Patent number 8,936,974
- Issue date Jan 20, 2015
- Intel Corporation
- Been-Yin Jin
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Isolation for nanowire devices
- Patent number 8,883,573
- Issue date Nov 11, 2014
- Intel Corporation
- Uday Shah
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Method of isolating nanowires from a substrate
- Patent number 8,853,067
- Issue date Oct 7, 2014
- Intel Corporation
- Benjamin Chu-Kung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strain-inducing semiconductor regions
- Patent number 8,841,180
- Issue date Sep 23, 2014
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 8,802,517
- Issue date Aug 12, 2014
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Silicon germanium and germanium multigate and nanowire structures f...
- Patent number 8,722,478
- Issue date May 13, 2014
- Intel Corporation
- Been-Yin Jin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Germanium-based quantum well devices
- Patent number 8,592,803
- Issue date Nov 26, 2013
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Non-planar germanium quantum well devices
- Patent number 8,575,596
- Issue date Nov 5, 2013
- Intel Corporation
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Strain inducing semiconductor regions
- Patent number 8,530,884
- Issue date Sep 10, 2013
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of isolating nanowires from a substrate
- Patent number 8,525,162
- Issue date Sep 3, 2013
- Intel Corporation
- Benjamin Chu-Kung
- B82 - NANO-TECHNOLOGY
Information Patent Grant
Apparatus and methods for improving parallel conduction in a quantu...
- Patent number 8,525,151
- Issue date Sep 3, 2013
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Extreme high mobility CMOS logic
- Patent number 8,518,768
- Issue date Aug 27, 2013
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Strain-inducing semiconductor regions
- Patent number 8,421,059
- Issue date Apr 16, 2013
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Tri-gate transistor device with stress incorporation layer and meth...
- Patent number 8,405,164
- Issue date Mar 26, 2013
- Intel Corporation
- Scott A. Hareland
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of forming nanodots using spacer patterning techniques and...
- Patent number 8,388,854
- Issue date Mar 5, 2013
- Intel Corporation
- Brian Doyle
- Y10 - TECHNICAL SUBJECTS COVERED BY FORMER USPC
Information Patent Grant
CMOS devices with a single work function gate electrode and method...
- Patent number 8,294,180
- Issue date Oct 23, 2012
- Intel Corporation
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
TECHNIQUES FOR FORMING NON-PLANAR GERMANIUM QUANTUM WELL DEVICES
- Publication number 20180047839
- Publication date Feb 15, 2018
- Intel Corporation
- RAVI PILLARISETTY
- B82 - NANO-TECHNOLOGY
Information Patent Application
TWO-DIMENSIONAL CONDENSATION FOR UNIAXIALLY STRAINED SEMICONDUCTOR...
- Publication number 20170317172
- Publication date Nov 2, 2017
- Intel Corporation
- Jack T. Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20170309734
- Publication date Oct 26, 2017
- Intel Corporation
- Suman DATTA
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL CONDENSATION FOR UNIAXIALLY STRAINED SEMICONDUCTOR...
- Publication number 20160329403
- Publication date Nov 10, 2016
- Intel Corporation
- Jack T. Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING NON-PLANAR GERMANIUM QUANTUM WELL DEVICES
- Publication number 20160172472
- Publication date Jun 16, 2016
- Intel Corporation
- RAVI PILLARISETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20160111423
- Publication date Apr 21, 2016
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-BASED QUANTUM WELL DEVICES
- Publication number 20160064520
- Publication date Mar 3, 2016
- Intel Corporation
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TWO-DIMENSIONAL CONDENSATION FOR UNIAXIALLY STRAINED SEMICONDUCTOR...
- Publication number 20160049513
- Publication date Feb 18, 2016
- Jack T. Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20140291615
- Publication date Oct 2, 2014
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES F...
- Publication number 20140170817
- Publication date Jun 19, 2014
- Been-Yih Jin
- B82 - NANO-TECHNOLOGY
Information Patent Application
TECHNIQUES FOR FORMING NON-PLANAR GERMANIUM QUANTUM WELL DEVICES
- Publication number 20140103397
- Publication date Apr 17, 2014
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Application
GERMANIUM-BASED QUANTUM WELL DEVICES
- Publication number 20140061589
- Publication date Mar 6, 2014
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TECHNIQUES FOR FORMING NON-PLANAR GERMANIUM QUANTUM WELL DEVICES
- Publication number 20140054548
- Publication date Feb 27, 2014
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Application
STRAIN-INDUCING SEMICONDUCTOR REGIONS
- Publication number 20130344668
- Publication date Dec 26, 2013
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ISOLATING NANOWIRES FROM A SUBSTRATE
- Publication number 20130334499
- Publication date Dec 19, 2013
- Benjamin Chu-Kung
- B82 - NANO-TECHNOLOGY
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20130328015
- Publication date Dec 12, 2013
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTU...
- Publication number 20130313520
- Publication date Nov 28, 2013
- RAVI PILLARISETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF ISOLATING NANOWIRES FROM A SUBSTRATE
- Publication number 20130062594
- Publication date Mar 14, 2013
- Benjamin Chu-Kung
- B82 - NANO-TECHNOLOGY
Information Patent Application
NON-PLANAR GERMANIUM QUANTUM WELL DEVICES
- Publication number 20130032783
- Publication date Feb 7, 2013
- Ravi Pillarisetty
- B82 - NANO-TECHNOLOGY
Information Patent Application
APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTU...
- Publication number 20120326123
- Publication date Dec 27, 2012
- RAVI PILLARISETTY
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ISOLATION FOR NANOWIRE DEVICES
- Publication number 20120309173
- Publication date Dec 6, 2012
- Uday Shah
- B82 - NANO-TECHNOLOGY
Information Patent Application
TWO-DIMENSIONAL CONDENSATION FOR UNIAXIALLY STRAINED SEMICONDUCTOR...
- Publication number 20120241818
- Publication date Sep 27, 2012
- Jack T. Kavalieros
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
EXTREME HIGH MOBILITY CMOS LOGIC
- Publication number 20120199813
- Publication date Aug 9, 2012
- Intel Corporation
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GERMANIUM-BASED QUANTUM WELL DEVICES
- Publication number 20120193609
- Publication date Aug 2, 2012
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRAIN-INDUCING SEMICONDUCTOR REGIONS
- Publication number 20120061649
- Publication date Mar 15, 2012
- Suman Datta
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTU...
- Publication number 20120032146
- Publication date Feb 9, 2012
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER
- Publication number 20110186912
- Publication date Aug 4, 2011
- Anand Murthy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CMOS DEVICES WITH A SINGLE WORK FUNCTION GATE ELECTRODE AND METHOD...
- Publication number 20110180851
- Publication date Jul 28, 2011
- Brian S. Doyle
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Germanium-based quantum well devices
- Publication number 20110156005
- Publication date Jun 30, 2011
- Ravi Pillarisetty
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Isolation for nanowire devices
- Publication number 20110147697
- Publication date Jun 23, 2011
- Uday Shah
- B82 - NANO-TECHNOLOGY

Been-Yih Jin

Person

Patents Grantslast 30 patents

Two-dimensional condensation for uniaxially strained semiconductor...

Techniques for forming non-planar germanium quantum well devices

Extreme high mobility CMOS logic

Techniques for forming non-planar germanium quantum well devices

Two-dimensional condensation for uniaxially strained semiconductor...

Extreme high mobility CMOS logic

Extreme high mobility CMOS logic

Germanium-based quantum well devices

Two-dimensional condensation for uniaxially strained semiconductor...

Techniques for forming non-planar germanium quantum well devices

Germanium-based quantum well devices

Two-dimensional condensation for uniaxially strained semiconductor...

Techniques for forming non-planar germanium quantum well devices

Apparatus and methods for improving parallel conduction in a quantu...

Silicon germanium and germanium multigate and nanowire structures f...

Isolation for nanowire devices

Method of isolating nanowires from a substrate

Strain-inducing semiconductor regions

Extreme high mobility CMOS logic

Silicon germanium and germanium multigate and nanowire structures f...

Germanium-based quantum well devices

Non-planar germanium quantum well devices

Strain inducing semiconductor regions

Method of isolating nanowires from a substrate

Apparatus and methods for improving parallel conduction in a quantu...

Extreme high mobility CMOS logic

Strain-inducing semiconductor regions

Tri-gate transistor device with stress incorporation layer and meth...

Methods of forming nanodots using spacer patterning techniques and...

CMOS devices with a single work function gate electrode and method...

Patents Applicationslast 30 patents

TECHNIQUES FOR FORMING NON-PLANAR GERMANIUM QUANTUM WELL DEVICES

TWO-DIMENSIONAL CONDENSATION FOR UNIAXIALLY STRAINED SEMICONDUCTOR...

EXTREME HIGH MOBILITY CMOS LOGIC

TWO-DIMENSIONAL CONDENSATION FOR UNIAXIALLY STRAINED SEMICONDUCTOR...

TECHNIQUES FOR FORMING NON-PLANAR GERMANIUM QUANTUM WELL DEVICES

EXTREME HIGH MOBILITY CMOS LOGIC

GERMANIUM-BASED QUANTUM WELL DEVICES

TWO-DIMENSIONAL CONDENSATION FOR UNIAXIALLY STRAINED SEMICONDUCTOR...

EXTREME HIGH MOBILITY CMOS LOGIC

SILICON GERMANIUM AND GERMANIUM MULTIGATE AND NANOWIRE STRUCTURES F...

TECHNIQUES FOR FORMING NON-PLANAR GERMANIUM QUANTUM WELL DEVICES

GERMANIUM-BASED QUANTUM WELL DEVICES

TECHNIQUES FOR FORMING NON-PLANAR GERMANIUM QUANTUM WELL DEVICES

STRAIN-INDUCING SEMICONDUCTOR REGIONS

METHOD OF ISOLATING NANOWIRES FROM A SUBSTRATE

EXTREME HIGH MOBILITY CMOS LOGIC

APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTU...

METHOD OF ISOLATING NANOWIRES FROM A SUBSTRATE

NON-PLANAR GERMANIUM QUANTUM WELL DEVICES

APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTU...

ISOLATION FOR NANOWIRE DEVICES

TWO-DIMENSIONAL CONDENSATION FOR UNIAXIALLY STRAINED SEMICONDUCTOR...

EXTREME HIGH MOBILITY CMOS LOGIC

GERMANIUM-BASED QUANTUM WELL DEVICES

STRAIN-INDUCING SEMICONDUCTOR REGIONS

APPARATUS AND METHODS FOR IMPROVING PARALLEL CONDUCTION IN A QUANTU...

TRANSISTOR GATE ELECTRODE HAVING CONDUCTOR MATERIAL LAYER

CMOS DEVICES WITH A SINGLE WORK FUNCTION GATE ELECTRODE AND METHOD...

Germanium-based quantum well devices

Isolation for nanowire devices