1. Field
The present invention relates to the field of semiconductor integrated circuit manufacturing, and more particularly to CMOS (complementary metal oxide semiconductor) devices having gate electrodes with a single work function.
2. Discussion of Related Art
During the past two decades, the physical dimensions of MOSFETs have been aggressively scaled for low-power, high-performance CMOS applications. In order to continue scaling future generations of CMOS, the use of metal gate electrode technology is important. For example, further gate insulator scaling will require the use of dielectric materials with a higher dielectric constant than silicon dioxide. Devices utilizing such gate insulator materials demonstrate vastly better performance when paired with metal gate electrodes rather than traditional poly-silicon gate electrodes.
Depending on the design of the transistors used in the CMOS process, the constraints placed on the metal gate material are somewhat different. For a planar, bulk or partially depleted, single-gate transistor, short-channel effects (SCE) are typically controlled through channel dopant engineering. Requirements on the transistor threshold voltages then dictate the gate work-function values must be close to the conduction and valence bands of silicon. For such devices, a “mid-gap” work function gate electrode that is located in the middle of the p and n channel work function range is inadequate. A mid-gap gate electrode typically results in a transistor having either a threshold voltage that is too high for high-performance applications, or a compromised SCE when the effective channel doping is reduced to lower the threshold voltage. For non-planar or multi-gate transistor designs, the device geometry better controls SCE and the channel may then be more lightly doped and potentially fully depleted at zero gate bias. For such devices, the threshold voltage can be determined primarily by the gate metal work function. However, even with the multi-gate transistor's improved SCE, it is typically necessary to have a gate electrode work function about 250 mV above mid-gap for an nMOS transistor and about 250 mV below mid-gap for a pMOS transistor. Therefore, a single mid-gap gate material is also incapable of achieving low threshold voltages for both pMOS (a MOSFET with a p-channel) and nMOS (a MOSFET with an n-channel) multi-gate transistors.
For these reasons, CMOS devices generally utilize two different gate electrodes, an nMOS electrode and a pMOS electrode, having two different work function values. For the traditional polysilicon gate electrode, the work function values are typically about 4.2 and 5.2 electron volts for the nMOS and pMOS electrodes respectively, and they are generally formed by doping the polysilicon material to be either n or p type. Attempts at changing the work function of metal gate materials to achieve similar threshold voltages is difficult as the metal work function must either be varied with an alloy mixture or two different metals utilized for n and p-channel devices.
One such conventional CMOS device 100 is shown in
Embodiments
A novel device structure and its method of fabrication are described. In the following description, numerous specific details are set forth, such as specific materials, dimensions and processes, etc. in order to provide a thorough understanding of the present invention. In other instances, well-known semiconductor processes and manufacturing techniques have not been described in particular detail in order to not unnecessarily obscure the present invention.
Embodiments of the present invention include complementary (pMOS and nMOS) transistors having semiconductor channel regions which have been band gap engineered to achieve a low threshold voltage. In particular embodiments, the complementary devices utilize the same material having a single work function as the gate electrode. Engineering the band gap of the semiconductor transistor channels rather than engineering the work function of the transistor gate metal for the individual pMOS and nMOS devices avoids the manufacturing difficulties associated with depositing and interconnecting two separate gate metals in a dual-metal gate process. A single metal gate stack, used for both pMOS and nMOS transistors, simplifies fabrication while engineering the band gap of the semiconductor transistor channels enables independent tuning of the pMOS and nMOS threshold voltages. In embodiments of the present invention, the threshold voltage of a device can be targeted through the use of semiconductor materials that have an appropriate valance band (pMOS) or conduction band (nMOS) offset relative to the complementary device. Therefore, embodiments of the present invention can utilize a single mid-band gap metal for both the pMOS and nMOS transistors in a CMOS device while still achieving a low threshold voltage for both the pMOS and nMOS transistors.
An example of a CMOS device 200 with a metal gate structure and an engineered band gap in accordance with an embodiment of the present invention is illustrated in
In alternate embodiments of the present invention (not shown) both the pMOS transistor and nMOS transistor comprise a semiconductor cladding material having a band offset relative to the substrate semiconductor. When the cladding material has only a valence band offset (no conduction band offset) relative to the substrate, the cladding layer on the nMOS transistor will not have any effect on the nMOS threshold voltage.
In a particular embodiment of the present invention, as shown in
In another embodiment of the invention, as shown in device 300 of
In embodiments shown in both
The semiconductor cladding 208 is ideally capable of remaining single crystalline with the semiconductor body 206 to ensure sufficient carrier lifetime and mobility, as the cladding 208 comprises the channel region of pMOS transistor 204. Semiconductor cladding 208 can be formed of any well-known semiconductor material, such as silicon germanium (SiGe), indium gallium arsenide (InxGa1-xAsy), indium antimonide (InxSby), indium gallium phosphide (InxGa1-xPy), or carbon nanotubes (CNT). In certain embodiments of the present invention where the semiconductor of bodies 206 and 207 are silicon, the semiconductor material used for the cladding 208 is SiGe. In certain other embodiments, one semiconductor body is silicon and the cladding layer is an alloy of silicon and carbon (SiC). In other embodiments of the present invention having a planar or single-gate transistor design (not shown), the cladding layer is formed directly on and adjacent to a top surface of the active semiconductor region over the substrate. In certain embodiments of the present invention having a multi-gate transistor design, as shown in
In certain embodiments of the present invention, the cladding 208, as shown in
Embodiments of the present invention include increasing the valence band energy of a pMOS transistor having a SiGe cladding region by increasing the concentration of the germanium. In this manner, it is possible to fabricate both a pMOS and nMOS multi-gate transistor having gate electrodes of the same material and threshold voltage magnitudes less than 0.7 V over a range of transistor channel doping levels. As the valence band energy increases, the threshold voltage is lowered by an amount approximately equal to the valance band voltage offset. In an embodiment of the present invention, the germanium concentration is between 5 and 50 percent, and more particularly, between 15 and 30 percent. For embodiments having about 25 percent germanium, the valence band energy is increased by about 300 mV above the valence band of silicon. Thus, a pMOS device having a SiGe channel region comprised of about 25 percent germanium will have a threshold voltage magnitude approximately 300 mV less than that of a pure silicon channel.
In embodiments of the present invention, nMOS multi-gate devices have a work function difference (the difference between the gate metal work function an the semiconductor work function or metal-semiconductor) of about 0.4 eV while the work function difference for a pMOS multi-gate device is about 0.7 eV. In a particular embodiment of the present invention, the 0.4 eV nMOS work function difference is achieved through Fermi-level pinning a mid-gap titanium nitride metal gate material (having a work function of about 4.7 eV). In a further embodiment of the present invention, a 0.7 eV pMOS work function difference is achieved with a band-engineered SiGe channel region comprised of about 25 percent germanium. The 25 percent germanium-cladding region increases the semiconductor valance band energy and, in effect, shifts the work function difference of the mid-gap titanium nitride metal gate material by about 300 mV, from the pinned Fermi-level of 0.4 eV to the desired 0.7 eV.
Embodiments of the present invention include adjusting the germanium concentration of a pMOS SiGe cladding region to adjust the threshold voltage, enabling multiple threshold voltages on the same chip, which is a different challenge from setting a single threshold voltage to match an nMOS device. For ULSI systems, it is typically necessary to provide a menu of devices with different threshold voltages to allow for the optimization of performance and power consumption. The ability to tune the threshold voltage by about 150 mV is often required. For devices with geometries in the sub-50-nm gate-length regime, it is very difficult to achieve such a range by merely doping the transistor channel. Disadvantageous channel doping can be avoided by embodiments of the present invention (e.g. illustrated in
In the embodiments depicted in
CMOS device embodiments 200 and 300 have a gate electrode 213, as shown in
As shown in
As shown in
A method of fabricating a CMOS device on an insulating substrate in accordance with an embodiment of the present invention as shown in
Although the semiconductor film 315 is ideally a silicon film, in other embodiments it can be other types of semiconductor films, such as germanium (Ge), a silicon germanium alloy (SiGe), gallium arsenide (GaAs), InSb, GaP, GaSb, or InP. In an embodiment of the present invention, semiconductor film 315 is an intrinsic (i.e., undoped) silicon film. In other embodiments, semiconductor film 315 is doped to p-type or n-type conductivity with a concentration level between 1×1016-1×1019 atoms/cm3. Semiconductor film 315 can be in-situ doped (i.e., doped while it is deposited) or doped after it is formed on substrate 202 by for example ion-implantation. Doping after formation enables complementary devices 204 and 205 to be fabricated easily on the same substrate. The doping level of the semiconductor substrate film 315 at this point can determine the doping level of the channel region of the device.
In certain embodiments of the present invention, semiconductor substrate film 315 is formed to a thickness approximately equal to the height desired for the subsequently formed semiconductor body or bodies of the fabricated transistor. In an embodiment of the present invention, semiconductor substrate film 315 has a thickness or height of less than 30 nanometers and ideally less than 20 nanometers. In certain embodiments of the present invention, semiconductor substrate region 315 is formed to a thickness enabling the fabricated transistor to be operated in a fully depleted manner for its designed gate length (Lg).
Semiconductor substrate region 315 can be formed on insulator 203 in any well-known method. In one method of forming a silicon-on-insulator substrate, known as the separation by implantation of oxygen (SIMOX) technique. Another technique currently used to form SOI substrates is an epitaxial silicon film transfer technique generally referred to as bonded SOI.
A masking layer 310 is used to define the active regions of the devices in regions 204 and 205. The masking layer can be any well-known material suitable for defining the semiconductor film 315. In an embodiment of the present invention, masking layer 310 is a lithographically defined photo resist. In another embodiment, 310 is formed of a dielectric material that has been lithographically defined and then etched. In a certain embodiment, masking layer can be a composite stack of materials, such as an oxide/nitride stack. As shown in
If desired, a masking can be formed over any regions of the substrate where there is to be no semiconductor cladding layer. As shown, in
In certain embodiments, semiconductor cladding layer 208 is selectively formed on the semiconductor body 206 of the pMOS device 204, as shown in
In certain embodiments of the present inventions, various regions over the substrate are selectively and iteratively masked and different pMOS devices (e.g. 204A and 204B in
A gate dielectric layer 212, as shown in
As shown in
Source regions 216 and drain regions 217 for the transistor are formed in semiconductor bodies 206 and 207 on opposite sides of gate electrode 213, as shown in
A method of fabricating a CMOS device on a bulk substrate in accordance with an embodiment of the present invention as shown in
In embodiments of the present invention, well regions of semiconductor substrate 202 are doped to p-type or n-type conductivity with a concentration level between about 1×1016-1×1019 atoms/cm3. Semiconductor substrate 202 can be doped by, for example, ion-implantation enabling both pMOS and nMOS well regions to be fabricated easily on the same substrate. The doping level of the semiconductor substrate 202 at this point can determine the doping level of the channel region of the device.
As shown in
As shown in
In certain embodiments, as shown in
In certain embodiments, once the non-planar semiconductor bodies 206 and 207 are formed on the bulk substrate, the remaining fabrication operations are analogous to those previously described for the embodiments describing a non-planar transistors on an SOI substrate.
Although the invention has been described in language specific to structural features and/or methodological acts, it is to be understood that the invention defined in the appended claims is not necessarily limited to the specific features or acts described. Rather, the specific features and acts are disclosed as particularly graceful implementations of the claimed invention.
This continuation application is related to, and claims priority to, the utility application entitled “CMOS DEVICES WITH A SINGLE WORK FUNCTION GATE ELECTRODE AND METHOD OF FABRICATION,” filed on Sep. 28, 2005 now abandoned having an application Ser. No. of 11/238,447; and divisional application entitled “CMOS DEVICES WITH A SINGLE WORK GATE ELECTRODE AND METHOD OF FABRICATION,” filed on Jan. 3, 2007, now U.S. Pat. No. 7,902,014 having an application Ser. No. of 11/649,545.
Number | Name | Date | Kind |
---|---|---|---|
4231149 | Chapman et al. | Nov 1980 | A |
4487652 | Almgren | Dec 1984 | A |
4711701 | McLevige | Dec 1987 | A |
4751201 | Nottenburg et al. | Jun 1988 | A |
4818715 | Chao | Apr 1989 | A |
4871692 | Lee et al. | Oct 1989 | A |
4872046 | Morkoc et al. | Oct 1989 | A |
4905063 | Beltram et al. | Feb 1990 | A |
4906589 | Chao | Mar 1990 | A |
4907048 | Huang | Mar 1990 | A |
4914059 | Nissim et al. | Apr 1990 | A |
4994873 | Madan | Feb 1991 | A |
4996574 | Shirasaka | Feb 1991 | A |
5023203 | Choi | Jun 1991 | A |
5120666 | Gotou | Jun 1992 | A |
5124777 | Lee | Jun 1992 | A |
5179037 | Seabaugh | Jan 1993 | A |
5216271 | Takagi et al. | Jun 1993 | A |
5278102 | Horie | Jan 1994 | A |
5308999 | Gotou | May 1994 | A |
5328810 | Lowrey et al. | Jul 1994 | A |
5338959 | Kim et al. | Aug 1994 | A |
5346836 | Manning et al. | Sep 1994 | A |
5346839 | Sundaresan | Sep 1994 | A |
5357119 | Wang et al. | Oct 1994 | A |
5391506 | Tada et al. | Feb 1995 | A |
5428237 | Yuzurihara et al. | Jun 1995 | A |
5466621 | Hisamoto et al. | Nov 1995 | A |
5475869 | Gomi et al. | Dec 1995 | A |
5479033 | Baca et al. | Dec 1995 | A |
5482877 | Rhee | Jan 1996 | A |
5495115 | Kudo et al. | Feb 1996 | A |
5514885 | Myrick | May 1996 | A |
5521859 | Ema et al. | May 1996 | A |
5543351 | Yoshihiko et al. | Aug 1996 | A |
5545586 | Koh | Aug 1996 | A |
5563077 | Ha | Oct 1996 | A |
5576227 | Hsu | Nov 1996 | A |
5578513 | Maegawa | Nov 1996 | A |
5595919 | Pan | Jan 1997 | A |
5595941 | Okarnoto et al. | Jan 1997 | A |
5652454 | Iwamatsu et al. | Jul 1997 | A |
5658806 | Lin et al. | Aug 1997 | A |
5665203 | Lee et al. | Sep 1997 | A |
5682048 | Shinohara et al. | Oct 1997 | A |
5698869 | Yoshimi et al. | Dec 1997 | A |
5701016 | Burroughes et al. | Dec 1997 | A |
5716879 | Choi et al. | Feb 1998 | A |
5739544 | Koichiro et al. | Apr 1998 | A |
5760442 | Shigyo et al. | Jun 1998 | A |
5770513 | Okaniwa et al. | Jun 1998 | A |
5773331 | Solomon et al. | Jun 1998 | A |
5776821 | Haskell et al. | Jul 1998 | A |
5793088 | Choi et al. | Aug 1998 | A |
5804848 | Mukai | Sep 1998 | A |
5811324 | Yang | Sep 1998 | A |
5814895 | Hirayama et al. | Sep 1998 | A |
5821629 | Wen et al. | Oct 1998 | A |
5827769 | Aminzadeh et al. | Oct 1998 | A |
5844278 | Mizuno et al. | Dec 1998 | A |
5856225 | Lee et al. | Jan 1999 | A |
5859456 | Efland et al. | Jan 1999 | A |
5880015 | Hata | Mar 1999 | A |
5883564 | Partin | Mar 1999 | A |
5888309 | Yu | Mar 1999 | A |
5889304 | Watanabe | Mar 1999 | A |
5899710 | Mukai | May 1999 | A |
5905285 | Garnder et al. | May 1999 | A |
5908313 | Chau et al. | Jun 1999 | A |
5952701 | Bulucea | Sep 1999 | A |
5965914 | Miyamoto | Oct 1999 | A |
5976767 | Li | Nov 1999 | A |
5981400 | Lo | Nov 1999 | A |
5985726 | Yu et al. | Nov 1999 | A |
6013926 | Oku et al. | Jan 2000 | A |
6018176 | Lim | Jan 2000 | A |
6031249 | Yamazaki et al. | Feb 2000 | A |
6051452 | Shigyo et al. | Apr 2000 | A |
6054355 | Inumiya et al. | Apr 2000 | A |
6063675 | Rodder | May 2000 | A |
6063677 | Rodder et al. | May 2000 | A |
6066869 | Noble et al. | May 2000 | A |
6087208 | Krivokapic et al. | Jul 2000 | A |
6093621 | Tseng | Jul 2000 | A |
6114201 | Wu | Sep 2000 | A |
6114206 | Yu | Sep 2000 | A |
6117697 | Seaford et al. | Sep 2000 | A |
6117741 | Chatterjee et al. | Sep 2000 | A |
6120846 | Hintermaier et al. | Sep 2000 | A |
6133593 | Boos et al. | Oct 2000 | A |
6144072 | Iwamatsu et al. | Nov 2000 | A |
6150222 | Gardner et al. | Nov 2000 | A |
6153485 | Pey et al. | Nov 2000 | A |
6163053 | Kawashima | Dec 2000 | A |
6165880 | Yaung et al. | Dec 2000 | A |
6174820 | Habermehl et al. | Jan 2001 | B1 |
6190975 | Kubo et al. | Feb 2001 | B1 |
6200865 | Gardner et al. | Mar 2001 | B1 |
6218309 | Miller et al. | Apr 2001 | B1 |
6251729 | Montree et al. | Jun 2001 | B1 |
6251763 | Inumiya et al. | Jun 2001 | B1 |
6252262 | Jonker et al. | Jun 2001 | B1 |
6252284 | Muller et al. | Jun 2001 | B1 |
6259135 | Hsu et al. | Jul 2001 | B1 |
6261921 | Yen et al. | Jul 2001 | B1 |
6262456 | Yu et al. | Jul 2001 | B1 |
6274503 | Hsieh | Aug 2001 | B1 |
6287924 | Chao et al. | Sep 2001 | B1 |
6294416 | Wu | Sep 2001 | B1 |
6307235 | Forbes et al. | Oct 2001 | B1 |
6310367 | Yagishita et al. | Oct 2001 | B1 |
6317444 | Chakrabarti et al. | Nov 2001 | B1 |
6319807 | Yeh et al. | Nov 2001 | B1 |
6320212 | Chow | Nov 2001 | B1 |
6335251 | Miyano et al. | Jan 2002 | B2 |
6358800 | Tseng | Mar 2002 | B1 |
6359311 | Colinge et al. | Mar 2002 | B1 |
6362111 | Laaksonen et al. | Mar 2002 | B1 |
6368923 | Huang | Apr 2002 | B1 |
6376317 | Forbes et al. | Apr 2002 | B1 |
6383882 | Lee et al. | May 2002 | B1 |
6387820 | Sanderfer | May 2002 | B1 |
6391782 | Yu | May 2002 | B1 |
6396108 | Krivokapic et al. | May 2002 | B1 |
6399970 | Kubo et al. | Jun 2002 | B2 |
6403434 | Yu | Jun 2002 | B1 |
6403981 | Yu | Jun 2002 | B1 |
6406795 | Hwang et al. | Jun 2002 | B1 |
6407442 | Inoue et al. | Jun 2002 | B2 |
6413802 | Hu et al. | Jul 2002 | B1 |
6413877 | Annapragada | Jul 2002 | B1 |
6424015 | Ishibashi et al. | Jul 2002 | B1 |
6437550 | Andoh et al. | Aug 2002 | B2 |
6458662 | Yu | Oct 2002 | B1 |
6459123 | Enders et al. | Oct 2002 | B1 |
6465290 | Suguro et al. | Oct 2002 | B1 |
6472258 | Adkisson et al. | Oct 2002 | B1 |
6475869 | Yu | Nov 2002 | B1 |
6475890 | Yu | Nov 2002 | B1 |
6479866 | Xiang | Nov 2002 | B1 |
6483146 | Lee et al. | Nov 2002 | B2 |
6483151 | Wakabayashi et al. | Nov 2002 | B2 |
6483156 | Adkisson et al. | Nov 2002 | B1 |
6495403 | Skotnicki et al. | Dec 2002 | B1 |
6498096 | Bruce et al. | Dec 2002 | B2 |
6500767 | Chiou et al. | Dec 2002 | B2 |
6501141 | Leu | Dec 2002 | B1 |
6506692 | Andideh | Jan 2003 | B2 |
6525403 | Inaba et al. | Feb 2003 | B2 |
6526996 | Chang et al. | Mar 2003 | B1 |
6534807 | Mandelman et al. | Mar 2003 | B2 |
6537862 | Song | Mar 2003 | B2 |
6537885 | Kang et al. | Mar 2003 | B1 |
6537901 | Cha et al. | Mar 2003 | B2 |
6541829 | Nishinohara et al. | Apr 2003 | B2 |
6555879 | Krivokapic et al. | Apr 2003 | B1 |
6562665 | Yu | May 2003 | B1 |
6562687 | Deleonibus et al. | May 2003 | B1 |
6566734 | Sugihara et al. | May 2003 | B2 |
6583469 | Fried et al. | Jun 2003 | B1 |
6605498 | Murthy et al. | Aug 2003 | B1 |
6607948 | Sugiyama et al. | Aug 2003 | B1 |
6610576 | Nowak | Aug 2003 | B2 |
6611029 | Ahmed et al. | Aug 2003 | B1 |
6630388 | Sekigawa et al. | Oct 2003 | B2 |
6635909 | Clark et al. | Oct 2003 | B2 |
6642090 | Fried et al. | Nov 2003 | B1 |
6642114 | Nakamura | Nov 2003 | B2 |
6645797 | Buynoski et al. | Nov 2003 | B1 |
6645826 | Yamazaki et al. | Nov 2003 | B2 |
6645861 | Cabral et al. | Nov 2003 | B2 |
6656853 | Ito | Dec 2003 | B2 |
6657259 | Fried et al. | Dec 2003 | B2 |
6660598 | Hanafi et al. | Dec 2003 | B2 |
6664160 | Park et al. | Dec 2003 | B2 |
6680240 | Maszara | Jan 2004 | B1 |
6686231 | Ahmed et al. | Feb 2004 | B1 |
6689650 | Gambino et al. | Feb 2004 | B2 |
6693324 | Maegawa et al. | Feb 2004 | B2 |
6696366 | Morey et al. | Feb 2004 | B1 |
6706571 | Yu et al. | Mar 2004 | B1 |
6709982 | Buynoski et al. | Mar 2004 | B1 |
6713396 | Anthony | Mar 2004 | B2 |
6716684 | Krivokapic et al. | Apr 2004 | B1 |
6716686 | Buynoski et al. | Apr 2004 | B1 |
6716690 | Wang et al. | Apr 2004 | B1 |
6730964 | Horiuchi | May 2004 | B2 |
6744103 | Snyder | Jun 2004 | B2 |
6756657 | Zhang et al. | Jun 2004 | B1 |
6762469 | Mocuta et al. | Jul 2004 | B2 |
6764884 | Yu et al. | Jul 2004 | B1 |
6765303 | Krivokapic et al. | Jul 2004 | B1 |
6770516 | Wu et al. | Aug 2004 | B2 |
6774390 | Sugiyama et al. | Aug 2004 | B2 |
6780694 | Doris et al. | Aug 2004 | B2 |
6784071 | Chen et al. | Aug 2004 | B2 |
6784076 | Gonzalez et al. | Aug 2004 | B2 |
6787402 | Yu | Sep 2004 | B1 |
6787406 | Hill et al. | Sep 2004 | B1 |
6787439 | Ahmed et al. | Sep 2004 | B2 |
6787845 | Deleonibus | Sep 2004 | B2 |
6787854 | Yang et al. | Sep 2004 | B1 |
6790733 | Natzle et al. | Sep 2004 | B1 |
6794313 | Chang | Sep 2004 | B1 |
6794718 | Nowak et al. | Sep 2004 | B2 |
6798000 | Luyken et al. | Sep 2004 | B2 |
6800885 | An et al. | Oct 2004 | B1 |
6800910 | Lin et al. | Oct 2004 | B2 |
6803631 | Dakshina-Murthy et al. | Oct 2004 | B2 |
6812075 | Fried et al. | Nov 2004 | B2 |
6812111 | Cheong et al. | Nov 2004 | B2 |
6815277 | Fried et al. | Nov 2004 | B2 |
6821834 | Ando | Nov 2004 | B2 |
6825506 | Chau et al. | Nov 2004 | B2 |
6830998 | Pan et al. | Dec 2004 | B1 |
6831310 | Mathew et al. | Dec 2004 | B1 |
6833588 | Yu et al. | Dec 2004 | B2 |
6835614 | Hanafi et al. | Dec 2004 | B2 |
6835618 | Dakshina-Murthy et al. | Dec 2004 | B1 |
6838322 | Pham et al. | Jan 2005 | B2 |
6844238 | Yeo et al. | Jan 2005 | B2 |
6849556 | Takahashi | Feb 2005 | B2 |
6849884 | Clark et al. | Feb 2005 | B2 |
6852559 | Kwak et al. | Feb 2005 | B2 |
6855606 | Chen et al. | Feb 2005 | B2 |
6855990 | Yeo et al. | Feb 2005 | B2 |
6858478 | Chau et al. | Feb 2005 | B2 |
6864540 | Divakaruni et al. | Mar 2005 | B1 |
6867433 | Yeo et al. | Mar 2005 | B2 |
6867460 | Anderson et al. | Mar 2005 | B1 |
6869868 | Chiu et al. | Mar 2005 | B2 |
6869898 | Inaki et al. | Mar 2005 | B2 |
6870226 | Maeda et al. | Mar 2005 | B2 |
6884154 | Mizushima et al. | Apr 2005 | B2 |
6885055 | Lee | Apr 2005 | B2 |
6890811 | Hou et al. | May 2005 | B2 |
6891234 | Connelly et al. | May 2005 | B1 |
6897527 | Dakshina-Murthy et al. | May 2005 | B2 |
6902947 | Chinn et al. | Jun 2005 | B2 |
6902962 | Yeo et al. | Jun 2005 | B2 |
6909147 | Aller et al. | Jun 2005 | B2 |
6909151 | Hareland et al. | Jun 2005 | B2 |
6919238 | Bohr | Jul 2005 | B2 |
6921691 | Li et al. | Jul 2005 | B1 |
6921702 | Ahn et al. | Jul 2005 | B2 |
6921963 | Krivokapic et al. | Jul 2005 | B2 |
6921982 | Joshi et al. | Jul 2005 | B2 |
6924190 | Dennison | Aug 2005 | B2 |
6955961 | Chung | Oct 2005 | B1 |
6960517 | Rios et al. | Nov 2005 | B2 |
6967351 | Fried et al. | Nov 2005 | B2 |
6969878 | Coronel et al. | Nov 2005 | B2 |
6970373 | Datta et al. | Nov 2005 | B2 |
6974738 | Hareland et al. | Dec 2005 | B2 |
6975014 | Krivokapic et al. | Dec 2005 | B1 |
6977415 | Matsuo | Dec 2005 | B2 |
6998301 | Yu et al. | Feb 2006 | B1 |
6998318 | Park | Feb 2006 | B2 |
7013447 | Mathew et al. | Mar 2006 | B2 |
7018551 | Beintner et al. | Mar 2006 | B2 |
7045401 | Lee et al. | May 2006 | B2 |
7045407 | Keating et al. | May 2006 | B2 |
7045441 | Chang et al. | May 2006 | B2 |
7056794 | Ku et al. | Jun 2006 | B2 |
7060539 | Chidambarrao et al. | Jun 2006 | B2 |
7061055 | Sekigawa et al. | Jun 2006 | B2 |
7071064 | Doyle et al. | Jul 2006 | B2 |
7074623 | Lochtefeld et al. | Jul 2006 | B2 |
7074656 | Yeo et al. | Jul 2006 | B2 |
7074662 | Lee et al. | Jul 2006 | B2 |
7084018 | Ahmed et al. | Aug 2006 | B1 |
7105390 | Brask et al. | Sep 2006 | B2 |
7105891 | Visokay | Sep 2006 | B2 |
7105894 | Yeo et al. | Sep 2006 | B2 |
7105934 | Anderson et al. | Sep 2006 | B2 |
7112478 | Grupp et al. | Sep 2006 | B2 |
7115945 | Lee et al. | Oct 2006 | B2 |
7119402 | Kinoshita et al. | Oct 2006 | B2 |
7122463 | Ohuchi | Oct 2006 | B2 |
7132360 | Schaeffer et al. | Nov 2006 | B2 |
7138320 | Van Bentum et al. | Nov 2006 | B2 |
7141480 | Adam et al. | Nov 2006 | B2 |
7141856 | Lee et al. | Nov 2006 | B2 |
7154118 | Lindert et al. | Dec 2006 | B2 |
7163851 | Adadeer et al. | Jan 2007 | B2 |
7163898 | Mariani et al. | Jan 2007 | B2 |
7172943 | Yeo et al. | Feb 2007 | B2 |
7183137 | Lee et al. | Feb 2007 | B2 |
7187043 | Arai et al. | Mar 2007 | B2 |
7214991 | Yeo et al. | May 2007 | B2 |
7235822 | Li | Jun 2007 | B2 |
7238564 | Ko et al. | Jul 2007 | B2 |
7241653 | Hareland et al. | Jul 2007 | B2 |
7247547 | Zhu et al. | Jul 2007 | B2 |
7247578 | Brask | Jul 2007 | B2 |
7250367 | Vaartstra et al. | Jul 2007 | B2 |
7250645 | Wang et al. | Jul 2007 | B1 |
7268024 | Yeo et al. | Sep 2007 | B2 |
7291886 | Doris et al. | Nov 2007 | B2 |
7297600 | Oh et al. | Nov 2007 | B2 |
7304336 | Cheng et al. | Dec 2007 | B2 |
7323710 | Kim et al. | Jan 2008 | B2 |
7329913 | Brask et al. | Feb 2008 | B2 |
7339241 | Orlowski et al. | Mar 2008 | B2 |
7348284 | Doyle et al. | Mar 2008 | B2 |
7348642 | Nowak | Mar 2008 | B2 |
7354817 | Watanabe et al. | Apr 2008 | B2 |
7358121 | Chau et al. | Apr 2008 | B2 |
7396730 | Li | Jul 2008 | B2 |
7452778 | Chen et al. | Nov 2008 | B2 |
7456471 | Anderson et al. | Nov 2008 | B2 |
7456476 | Hareland et al. | Nov 2008 | B2 |
7479421 | Kavalieros et al. | Jan 2009 | B2 |
7573059 | Hudait et al. | Aug 2009 | B2 |
7585734 | Kang et al. | Sep 2009 | B2 |
7612416 | Takeuchi et al. | Nov 2009 | B2 |
7655989 | Zhu et al. | Feb 2010 | B2 |
7701018 | Yamagami et al. | Apr 2010 | B2 |
20010019886 | Bruce et al. | Sep 2001 | A1 |
20010026985 | Kim et al. | Oct 2001 | A1 |
20010040907 | Chakrabarti | Nov 2001 | A1 |
20020011612 | Hieda | Jan 2002 | A1 |
20020036290 | Inaba et al. | Mar 2002 | A1 |
20020037619 | Sugihara et al. | Mar 2002 | A1 |
20020048918 | Grider et al. | Apr 2002 | A1 |
20020058374 | Kim et al. | May 2002 | A1 |
20020074614 | Furuta et al. | Jun 2002 | A1 |
20020081794 | Ito | Jun 2002 | A1 |
20020096724 | Liang et al. | Jul 2002 | A1 |
20020142529 | Matsuda et al. | Oct 2002 | A1 |
20020149031 | Kim et al. | Oct 2002 | A1 |
20020160553 | Yamanaka et al. | Oct 2002 | A1 |
20020166838 | Nagarajan | Nov 2002 | A1 |
20020167007 | Yamazaki et al. | Nov 2002 | A1 |
20020177263 | Hanafi et al. | Nov 2002 | A1 |
20020177282 | Song | Nov 2002 | A1 |
20020185655 | Fahimulla et al. | Dec 2002 | A1 |
20030036290 | Hsieh et al. | Feb 2003 | A1 |
20030042542 | Maegawa et al. | Mar 2003 | A1 |
20030057477 | Hergenrother et al. | Mar 2003 | A1 |
20030057486 | Gambino et al. | Mar 2003 | A1 |
20030067017 | Ieong et al. | Apr 2003 | A1 |
20030080332 | Phillips | May 2003 | A1 |
20030085194 | Hopkins, Jr. | May 2003 | A1 |
20030098479 | Murthy et al. | May 2003 | A1 |
20030098488 | O'Keeffe et al. | May 2003 | A1 |
20030102497 | Fried et al. | Jun 2003 | A1 |
20030102518 | Fried et al. | Jun 2003 | A1 |
20030111686 | Nowak | Jun 2003 | A1 |
20030122186 | Sekigawa et al. | Jul 2003 | A1 |
20030143791 | Cheong et al. | Jul 2003 | A1 |
20030151077 | Mathew et al. | Aug 2003 | A1 |
20030174534 | Clark et al. | Sep 2003 | A1 |
20030190766 | Gonzalez et al. | Oct 2003 | A1 |
20030201458 | Clark et al. | Oct 2003 | A1 |
20030203636 | Hieda | Oct 2003 | A1 |
20030227036 | Sugiyama et al. | Dec 2003 | A1 |
20040016968 | Coronel et al. | Jan 2004 | A1 |
20040029345 | Deleonibus et al. | Feb 2004 | A1 |
20040029393 | Ying et al. | Feb 2004 | A1 |
20040031979 | Lochtefeld et al. | Feb 2004 | A1 |
20040033639 | Chinn et al. | Feb 2004 | A1 |
20040036118 | Abadeer et al. | Feb 2004 | A1 |
20040036126 | Chau et al. | Feb 2004 | A1 |
20040036127 | Chau et al. | Feb 2004 | A1 |
20040038436 | Mori et al. | Feb 2004 | A1 |
20040038533 | Liang | Feb 2004 | A1 |
20040061178 | Lin et al. | Apr 2004 | A1 |
20040063286 | Kim et al. | Apr 2004 | A1 |
20040070020 | Fujiwara et al. | Apr 2004 | A1 |
20040075149 | Fitzgerald et al. | Apr 2004 | A1 |
20040082125 | Hou | Apr 2004 | A1 |
20040092062 | Ahmed et al. | May 2004 | A1 |
20040092067 | Hanafi et al. | May 2004 | A1 |
20040094807 | Chau et al. | May 2004 | A1 |
20040099903 | Yeo et al. | May 2004 | A1 |
20040099966 | Chau et al. | May 2004 | A1 |
20040108523 | Chen et al. | Jun 2004 | A1 |
20040108558 | Kwak et al. | Jun 2004 | A1 |
20040110097 | Ahmed et al. | Jun 2004 | A1 |
20040110331 | Yeo et al. | Jun 2004 | A1 |
20040113181 | Wicker | Jun 2004 | A1 |
20040119100 | Nowak et al. | Jun 2004 | A1 |
20040124492 | Matsuo | Jul 2004 | A1 |
20040126975 | Ahmed et al. | Jul 2004 | A1 |
20040132236 | Doris et al. | Jul 2004 | A1 |
20040145000 | An et al. | Jul 2004 | A1 |
20040145019 | Dakshina-Murthy et al. | Jul 2004 | A1 |
20040166642 | Chen et al. | Aug 2004 | A1 |
20040169221 | Ko et al. | Sep 2004 | A1 |
20040169269 | Yeo et al. | Sep 2004 | A1 |
20040180491 | Arai et al. | Sep 2004 | A1 |
20040191980 | Rios et al. | Sep 2004 | A1 |
20040195624 | Liu et al. | Oct 2004 | A1 |
20040198003 | Yeo et al. | Oct 2004 | A1 |
20040203254 | Conley et al. | Oct 2004 | A1 |
20040209463 | Kim et al. | Oct 2004 | A1 |
20040217420 | Yeo et al. | Nov 2004 | A1 |
20040219711 | Wu et al. | Nov 2004 | A1 |
20040219722 | Pham et al. | Nov 2004 | A1 |
20040219780 | Ohuchi | Nov 2004 | A1 |
20040222473 | Risaki | Nov 2004 | A1 |
20040227187 | Cheng et al. | Nov 2004 | A1 |
20040238887 | Nihey | Dec 2004 | A1 |
20040238915 | Chen et al. | Dec 2004 | A1 |
20040256647 | Lee et al. | Dec 2004 | A1 |
20040262683 | Bohr et al. | Dec 2004 | A1 |
20040262699 | Rios et al. | Dec 2004 | A1 |
20040266076 | Doris et al. | Dec 2004 | A1 |
20050019993 | Lee et al. | Jan 2005 | A1 |
20050020020 | Collaert et al. | Jan 2005 | A1 |
20050023633 | Yeo et al. | Feb 2005 | A1 |
20050035415 | Yeo et al. | Feb 2005 | A1 |
20050040429 | Uppal | Feb 2005 | A1 |
20050040444 | Cohen | Feb 2005 | A1 |
20050059214 | Cheng et al. | Mar 2005 | A1 |
20050062082 | Bucher et al. | Mar 2005 | A1 |
20050073060 | Datta et al. | Apr 2005 | A1 |
20050093028 | Chambers | May 2005 | A1 |
20050093067 | Yeo et al. | May 2005 | A1 |
20050093075 | Bentum et al. | May 2005 | A1 |
20050093154 | Kottantharayil et al. | May 2005 | A1 |
20050104055 | Kwak et al. | May 2005 | A1 |
20050110082 | Cheng | May 2005 | A1 |
20050116218 | Yang | Jun 2005 | A1 |
20050116289 | Boyd et al. | Jun 2005 | A1 |
20050118790 | Lee et al. | Jun 2005 | A1 |
20050127362 | Zhang et al. | Jun 2005 | A1 |
20050127632 | Gehret | Jun 2005 | A1 |
20050133829 | Kunii et al. | Jun 2005 | A1 |
20050133866 | Chau et al. | Jun 2005 | A1 |
20050136584 | Boyanov et al. | Jun 2005 | A1 |
20050139860 | Snyder et al. | Jun 2005 | A1 |
20050145894 | Chau et al. | Jul 2005 | A1 |
20050145941 | Bedell et al. | Jul 2005 | A1 |
20050145944 | Murthy et al. | Jul 2005 | A1 |
20050148131 | Brask | Jul 2005 | A1 |
20050148137 | Brask et al. | Jul 2005 | A1 |
20050153494 | Ku et al. | Jul 2005 | A1 |
20050156171 | Brask et al. | Jul 2005 | A1 |
20050156202 | Rhee et al. | Jul 2005 | A1 |
20050156227 | Jeng | Jul 2005 | A1 |
20050161739 | Anderson et al. | Jul 2005 | A1 |
20050162928 | Rosmeulen | Jul 2005 | A1 |
20050167766 | Yagishita | Aug 2005 | A1 |
20050170593 | Kang et al. | Aug 2005 | A1 |
20050184316 | Kim et al. | Aug 2005 | A1 |
20050189583 | Kim et al. | Sep 2005 | A1 |
20050199919 | Liu et al. | Sep 2005 | A1 |
20050202604 | Cheng et al. | Sep 2005 | A1 |
20050215014 | Ahn et al. | Sep 2005 | A1 |
20050215022 | Adam et al. | Sep 2005 | A1 |
20050224797 | Ko et al. | Oct 2005 | A1 |
20050224800 | Lindert et al. | Oct 2005 | A1 |
20050227498 | Furukawa et al. | Oct 2005 | A1 |
20050230763 | Huang et al. | Oct 2005 | A1 |
20050233156 | Senzaki et al. | Oct 2005 | A1 |
20050239252 | Ahn et al. | Oct 2005 | A1 |
20050255642 | Liu et al. | Nov 2005 | A1 |
20050266645 | Park | Dec 2005 | A1 |
20050272192 | Oh et al. | Dec 2005 | A1 |
20050277294 | Schaefer et al. | Dec 2005 | A1 |
20050280121 | Doris et al. | Dec 2005 | A1 |
20050287752 | Nouri et al. | Dec 2005 | A1 |
20060014338 | Doris et al. | Jan 2006 | A1 |
20060040054 | Pearlstein et al. | Feb 2006 | A1 |
20060043500 | Chen et al. | Mar 2006 | A1 |
20060046521 | Vaartstra et al. | Mar 2006 | A1 |
20060063469 | Talieh et al. | Mar 2006 | A1 |
20060068591 | Radosavljevic et al. | Mar 2006 | A1 |
20060071299 | Doyle et al. | Apr 2006 | A1 |
20060086977 | Shah et al. | Apr 2006 | A1 |
20060148182 | Datta et al. | Jul 2006 | A1 |
20060154478 | Hsu et al. | Jul 2006 | A1 |
20060170066 | Mathew et al. | Aug 2006 | A1 |
20060172479 | Furukawa et al. | Aug 2006 | A1 |
20060172480 | Wang et al. | Aug 2006 | A1 |
20060172497 | Hareland et al. | Aug 2006 | A1 |
20060180859 | Radosavljevic et al. | Aug 2006 | A1 |
20060202270 | Son et al. | Sep 2006 | A1 |
20060204898 | Gutsche et al. | Sep 2006 | A1 |
20060205164 | Ko et al. | Sep 2006 | A1 |
20060211184 | Boyd et al. | Sep 2006 | A1 |
20060220131 | Kinoshita et al. | Oct 2006 | A1 |
20060227595 | Chuang et al. | Oct 2006 | A1 |
20060240622 | Lee et al. | Oct 2006 | A1 |
20060244066 | Yeo et al. | Nov 2006 | A1 |
20060263699 | Abatchev et al. | Nov 2006 | A1 |
20060281325 | Chou et al. | Dec 2006 | A1 |
20070001219 | Radosavljevic et al. | Jan 2007 | A1 |
20070023795 | Nagano et al. | Feb 2007 | A1 |
20070029624 | Nowak | Feb 2007 | A1 |
20070045735 | Orlowski et al. | Mar 2007 | A1 |
20070045748 | Booth, Jr. et al. | Mar 2007 | A1 |
20070048930 | Figura et al. | Mar 2007 | A1 |
20070052041 | Sorada et al. | Mar 2007 | A1 |
20070069293 | Kavalieros et al. | Mar 2007 | A1 |
20070069302 | Jin et al. | Mar 2007 | A1 |
20070090416 | Doyle et al. | Apr 2007 | A1 |
20070093010 | Mathew et al. | Apr 2007 | A1 |
20070108514 | Inoue et al. | May 2007 | A1 |
20070187682 | Takeuchi et al. | Aug 2007 | A1 |
20070241414 | Narihiro | Oct 2007 | A1 |
20070259501 | Xiong et al. | Nov 2007 | A1 |
20070262389 | Chau et al. | Nov 2007 | A1 |
20080017890 | Yuan et al. | Jan 2008 | A1 |
20080017934 | Kim et al. | Jan 2008 | A1 |
20080111163 | Russ et al. | May 2008 | A1 |
20080116515 | Gossner et al. | May 2008 | A1 |
20080128796 | Zhu et al. | Jun 2008 | A1 |
20080128797 | Dyer et al. | Jun 2008 | A1 |
20080212392 | Bauer | Sep 2008 | A1 |
20080237655 | Nakabayashi et al. | Oct 2008 | A1 |
20080258207 | Radosavljevic et al. | Oct 2008 | A1 |
20090061572 | Hareland et al. | Mar 2009 | A1 |
20090090976 | Kavalieros et al. | Apr 2009 | A1 |
20090099181 | Wurster et al. | Apr 2009 | A1 |
20100200923 | Chen et al. | Aug 2010 | A1 |
Number | Date | Country |
---|---|---|
102039978 | Aug 2003 | DE |
0265314 | Apr 1988 | EP |
0469604 | Feb 1992 | EP |
0474952 | Mar 1992 | EP |
0510667 | Oct 1992 | EP |
0623963 | May 1994 | EP |
1091413 | Apr 2001 | EP |
1202335 | May 2002 | EP |
1566844 | Aug 2005 | EP |
2156149 | Oct 1985 | GB |
56073454 | Jun 1981 | JP |
59145538 | Aug 1984 | JP |
2303048 | Dec 1990 | JP |
05090252 | Apr 1993 | JP |
6005856 | Jan 1994 | JP |
06132521 | May 1994 | JP |
6151387 | May 1994 | JP |
6177089 | Jun 1994 | JP |
6224440 | Aug 1994 | JP |
9162301 | Jun 1997 | JP |
2000037842 | Feb 2000 | JP |
2001189453 | Jul 2001 | JP |
2001338987 | Dec 2001 | JP |
2002298051 | Oct 2002 | JP |
2003298051 | Oct 2003 | JP |
2005085916 | Mar 2005 | JP |
200414538 | Aug 1992 | TW |
200518310 | Nov 1992 | TW |
516232 | Jan 2003 | TW |
561530 | Jan 2003 | TW |
548799 | Aug 2003 | TW |
200402872 | Feb 2004 | TW |
200405408 | Apr 2004 | TW |
200417034 | Sep 2004 | TW |
200729407 | Aug 2007 | TW |
I321830 | Mar 2010 | TW |
WO-9106976 | May 1991 | WO |
WO-0243151 | May 2002 | WO |
WO-02095814 | Nov 2002 | WO |
WO-03003442 | Jan 2003 | WO |
WO-2004059726 | Jul 2004 | WO |
WO-2005036651 | Apr 2005 | WO |
WO-2007038575 | Apr 2007 | WO |
WO-2007064492 | Jun 2007 | WO |
Number | Date | Country | |
---|---|---|---|
20110180851 A1 | Jul 2011 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 11649545 | Jan 2007 | US |
Child | 11238447 | US |
Number | Date | Country | |
---|---|---|---|
Parent | 11238447 | Sep 2005 | US |
Child | 13038190 | US |