Bei Zhu

Person

Shanghai, CN

People

Patents Grantslast 30 patents

Information Patent Grant
Silicon germanium and polysilicon gate structure for strained silic...
- Patent number 8,551,831
- Issue date Oct 8, 2013
- Semiconductor Manufacturing International (Shanghai) Corporation
- Da Wei Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for strained source/drain CMOS using oxide hard...
- Patent number 8,058,120
- Issue date Nov 15, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xian Jie Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Etching method and structure using a hard mask for strained silicon...
- Patent number 7,557,000
- Issue date Jul 7, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Polysilicon gate doping method and structure for strained silicon M...
- Patent number 7,335,566
- Issue date Feb 26, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xian J. Ning
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
INTEGRATION SCHEME FOR STRAINED SOURCE/DRAIN CMOS USING OXIDE HARD...
- Publication number 20110070701
- Publication date Mar 24, 2011
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xian Jie Ning
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Silicon Germanium and Polysilicon Gate Structure for Strained Silic...
- Publication number 20090152599
- Publication date Jun 18, 2009
- Semiconductor Manufacturing International (Shanghai) Corporation
- Da Wei Gao
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND STRUCTURE IN A SILICON RECESS FOR SUBSEQUENT EPI...
- Publication number 20080173941
- Publication date Jul 24, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- Bei Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ETCHING METHOD AND STRUCTURE USING A HARD MASK FOR STRAINED SILICON...
- Publication number 20080119032
- Publication date May 22, 2008
- Semiconductor Manufacturing International (Shanghai) Corporation
- John Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
In-situ doped silicon germanium and silicon carbide source drain re...
- Publication number 20070196992
- Publication date Aug 23, 2007
- Semiconductor Manufacturing Int'l (Shanghai) Corporation
- Mo Hong Xiang
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Poly Silicon Gate Doping Method and Structure for Strained Silicon...
- Publication number 20070184668
- Publication date Aug 9, 2007
- Semiconductor Manufacturing International (Shanghai) Corporation
- Xian J. Ning
- H01 - BASIC ELECTRIC ELEMENTS

Person

Patents Grantslast 30 patents

Silicon germanium and polysilicon gate structure for strained silic...

Integration scheme for strained source/drain CMOS using oxide hard...

Etching method and structure using a hard mask for strained silicon...

Polysilicon gate doping method and structure for strained silicon M...

Patents Applicationslast 30 patents

INTEGRATION SCHEME FOR STRAINED SOURCE/DRAIN CMOS USING OXIDE HARD...

Silicon Germanium and Polysilicon Gate Structure for Strained Silic...

ETCHING METHOD AND STRUCTURE IN A SILICON RECESS FOR SUBSEQUENT EPI...

ETCHING METHOD AND STRUCTURE USING A HARD MASK FOR STRAINED SILICON...

In-situ doped silicon germanium and silicon carbide source drain re...

Poly Silicon Gate Doping Method and Structure for Strained Silicon...