Benham Moradi

Person

Boise, ID, US

People

Patents Grantslast 30 patents

Information Patent Grant
Electrode structures, display devices containing the same
- Patent number 7,504,767
- Issue date Mar 17, 2009
- Micron Technology, Inc.
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for programmable field emission display
- Patent number RE40490
- Issue date Sep 9, 2008
- Micron Technology, Inc.
- Tianhong Zhang
- 345 - Computer graphics processing and selective visual display systems
Information Patent Grant
Field effect transistor fabrication methods, field emission device...
- Patent number 7,329,552
- Issue date Feb 12, 2008
- Micron Technology, Inc.
- Ji Ung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen and phosphorus doped amorphous silicon as resistor for fie...
- Patent number 7,239,075
- Issue date Jul 3, 2007
- Micron Technology, Inc.
- Kanwal K. Raina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming nitrogen and phosphorus doped amorphous silicon a...
- Patent number 7,097,526
- Issue date Aug 29, 2006
- Micron Technology, Inc.
- Kanwal K. Raina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen and phosphorus doped amorphous silicon as resistor for fie...
- Patent number 6,911,766
- Issue date Jun 28, 2005
- Micron Technology, Inc.
- Kanwal K. Raina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structures, display devices containing the same
- Patent number 6,900,586
- Issue date May 31, 2005
- Micron Technology, Inc.
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structures, display devices containing the same, and meth...
- Patent number 6,726,518
- Issue date Apr 27, 2004
- Micron Technology, Inc.
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Nitrogen and phosphorus doped amorphous silicon as resistor for fie...
- Patent number 6,635,983
- Issue date Oct 21, 2003
- Micron Technology, Inc.
- Kanwal K. Raina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Insulated electrode structures for a display device
- Patent number 6,630,781
- Issue date Oct 7, 2003
- Micron Technology, Inc.
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors, field emission apparatuses, and a thin fi...
- Patent number 6,504,170
- Issue date Jan 7, 2003
- Micron Technology, Inc.
- J. Ung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structures, display devices containing the same, and meth...
- Patent number 6,422,907
- Issue date Jul 23, 2002
- Micron Technology, Inc.
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field effect transistors, field emission apparatuses, thin film tra...
- Patent number 6,344,378
- Issue date Feb 5, 2002
- Micron Technology, Inc.
- Ji Ung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structures, display devices containing the same, and meth...
- Patent number 6,259,199
- Issue date Jul 10, 2001
- Micron Technology, Inc.
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Electrode structures, display devices containing the same, and meth...
- Patent number 6,224,447
- Issue date May 1, 2001
- Micron Technology, Inc.
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
Nitrogen and phosphorus doped amorphous silicon as resistor for fie...
- Publication number 20070029918
- Publication date Feb 8, 2007
- Kanwal K. Raina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of forming nitrogen and phosphorus doped amorphous silicon a...
- Publication number 20050266765
- Publication date Dec 1, 2005
- Kanwal K. Raina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode structures, display devices containing the same
- Publication number 20050168130
- Publication date Aug 4, 2005
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Nitrogen and phosphorus doped amorphous silicon as resistor for fie...
- Publication number 20040036399
- Publication date Feb 26, 2004
- Kanwal K. Raina
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode structures, display devices containing the same
- Publication number 20040027051
- Publication date Feb 12, 2004
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode structure, display devices containing the same, and metho...
- Publication number 20020182969
- Publication date Dec 5, 2002
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Field effect transistor fabrication methods, field emission device...
- Publication number 20020098630
- Publication date Jul 25, 2002
- Ji Ung Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode structures, display devices containing the same
- Publication number 20020014832
- Publication date Feb 7, 2002
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Electrode structures, display devices containing the same, and meth...
- Publication number 20010010991
- Publication date Aug 2, 2001
- Benham Moradi
- H01 - BASIC ELECTRIC ELEMENTS

Benham Moradi

Person

Patents Grantslast 30 patents

Electrode structures, display devices containing the same

Method and apparatus for programmable field emission display

Field effect transistor fabrication methods, field emission device...

Nitrogen and phosphorus doped amorphous silicon as resistor for fie...

Method of forming nitrogen and phosphorus doped amorphous silicon a...

Nitrogen and phosphorus doped amorphous silicon as resistor for fie...

Electrode structures, display devices containing the same

Electrode structures, display devices containing the same, and meth...

Nitrogen and phosphorus doped amorphous silicon as resistor for fie...

Insulated electrode structures for a display device

Field effect transistors, field emission apparatuses, and a thin fi...

Electrode structures, display devices containing the same, and meth...

Field effect transistors, field emission apparatuses, thin film tra...

Electrode structures, display devices containing the same, and meth...

Electrode structures, display devices containing the same, and meth...

Patents Applicationslast 30 patents

Nitrogen and phosphorus doped amorphous silicon as resistor for fie...

Method of forming nitrogen and phosphorus doped amorphous silicon a...

Electrode structures, display devices containing the same

Nitrogen and phosphorus doped amorphous silicon as resistor for fie...

Electrode structures, display devices containing the same

Electrode structure, display devices containing the same, and metho...

Field effect transistor fabrication methods, field emission device...

Electrode structures, display devices containing the same

Electrode structures, display devices containing the same, and meth...