Benjamin Colombeau

Person

Salem, MA, US

People

Patents Grantslast 30 patents

Information Patent Grant
Threshold voltage modulation for gate-all-around FET architecture
- Patent number 12,183,798
- Issue date Dec 31, 2024
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon etch for gate all around transistors
- Patent number 12,062,708
- Issue date Aug 13, 2024
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for GAA I/O formation by selective epi regrowth
- Patent number 12,027,607
- Issue date Jul 2, 2024
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around I/O engineering
- Patent number 11,923,441
- Issue date Mar 5, 2024
- Applied Materials, Inc.
- Steven C. H. Hung
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Stress incorporation in semiconductor devices
- Patent number 11,699,755
- Issue date Jul 11, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selective silicon etch for gate all around transistors
- Patent number 11,508,828
- Issue date Nov 22, 2022
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal GAA nano-wire and nano-slab transistors
- Patent number 11,495,500
- Issue date Nov 8, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate interface engineering with doped layer
- Patent number 11,456,178
- Issue date Sep 27, 2022
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all around I/O engineering
- Patent number 11,450,759
- Issue date Sep 20, 2022
- Applied Materials, Inc.
- Steven C. H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Doping techniques
- Patent number 11,443,948
- Issue date Sep 13, 2022
- Applied Materials, Inc.
- Wolfgang Aderhold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for GAA I/O formation by selective epi regrowth
- Patent number 11,393,916
- Issue date Jul 19, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods and apparatus for integrated selective monolayer doping
- Patent number 11,373,871
- Issue date Jun 28, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated CMOS source drain formation with advanced control
- Patent number 11,309,404
- Issue date Apr 19, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Cap oxidation for FinFET formation
- Patent number 11,271,097
- Issue date Mar 8, 2022
- Applied Materials, Inc.
- Steven C. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Diffusion barrier layer
- Patent number 11,189,479
- Issue date Nov 30, 2021
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 11,145,761
- Issue date Oct 12, 2021
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all-around device
- Patent number 11,024,746
- Issue date Jun 1, 2021
- Applied Materrials, Inc.
- Russell Chin Yee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated semiconductor processing
- Patent number 10,861,722
- Issue date Dec 8, 2020
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Gate all-around device
- Patent number 10,629,752
- Issue date Apr 21, 2020
- Applied Materials, Inc.
- Russell Chin Yee Teo
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device isolation
- Patent number 10,573,719
- Issue date Feb 25, 2020
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 10,490,666
- Issue date Nov 26, 2019
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming non-line-of-sight source drain extension in an NMOS FINFET...
- Patent number 10,483,355
- Issue date Nov 19, 2019
- Applied Materials, Inc.
- Matthias Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating asymmetrical three dimensional device
- Patent number 10,381,465
- Issue date Aug 13, 2019
- Varian Semiconductor Equipment Associates, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Imaging of crystalline defects
- Patent number 10,347,462
- Issue date Jul 9, 2019
- Applied Materials Israel Ltd.
- Dror Shemesh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around and FinFET device isolation
- Patent number 9,865,735
- Issue date Jan 9, 2018
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Forming non-line-of-sight source drain extension in an nMOS finFET...
- Patent number 9,853,129
- Issue date Dec 26, 2017
- Applied Materials, Inc.
- Matthias Bauer
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for fabricating three dimensional device
- Patent number 9,748,364
- Issue date Aug 29, 2017
- Varian Semiconductor Equipment Associates, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Techniques for increased dopant activation in compound semiconductors
- Patent number 9,576,819
- Issue date Feb 21, 2017
- Varian Semiconductor Equipment Associates, Inc.
- Christopher R. Hatem
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Horizontal gate all around device isolation
- Patent number 9,460,920
- Issue date Oct 4, 2016
- Applied Materials, Inc.
- Shiyu Sun
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method for improving fin isolation
- Patent number 9,455,196
- Issue date Sep 27, 2016
- Varian Semiconductor Equipment Associates, Inc.
- Nilay A. Pradhan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
METHODS OF REDUCING BACKSIDE CONTACT RESISTANCE
- Publication number 20240332388
- Publication date Oct 3, 2024
- Applied Materials, Inc.
- Byeong Chan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE OXIDATION PROCESSES FOR GATE-ALL-AROUND TRANSISTORS
- Publication number 20240321584
- Publication date Sep 26, 2024
- Applied Materials, Inc.
- Byeong Chan Lee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOID-FREE STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20240290883
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20240290884
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- El Mehdi Bazizi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
ENHANCED MOBILITY IN SEMICONDUCTOR DEVICES
- Publication number 20240290885
- Publication date Aug 29, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
- Publication number 20240234544
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Application
INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE
- Publication number 20240234531
- Publication date Jul 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTILAYER INNER SPACER FOR GATE-ALL-AROUND DEVICE
- Publication number 20240194757
- Publication date Jun 13, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CHANNEL UNIFORMITY HORIZONTAL GATE ALL AROUND DEVICE
- Publication number 20240136229
- Publication date Apr 25, 2024
- Applied Materials, Inc.
- Jody FRONHEISER
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL
- Publication number 20240120193
- Publication date Apr 11, 2024
- Applied Materials, Inc.
- Shankar Venkataraman
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
PROCESSING METHODS AND CLUSTER TOOLS FOR FORMING SEMICONDUCTOR DEVICES
- Publication number 20240038553
- Publication date Feb 1, 2024
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGY
- Publication number 20240014214
- Publication date Jan 11, 2024
- Applied Materials, Inc.
- Sai Hooi Yeong
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
CONTACT FORMATION PROCESS FOR CMOS DEVICES
- Publication number 20230377997
- Publication date Nov 23, 2023
- Applied Materials, Inc.
- Nicolas Louis BREIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRESS INCORPORATION IN SEMICONDUCTOR DEVICES
- Publication number 20230299199
- Publication date Sep 21, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND BACKSIDE POWER RAIL WITH DIFFUSION BREAK
- Publication number 20230260909
- Publication date Aug 17, 2023
- Applied Materials, Inc.
- Andrew Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACK...
- Publication number 20230260908
- Publication date Aug 17, 2023
- Applied Materials, Inc.
- Andrew Yeoh
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE-ALL-AROUND TRANSISTORS AND METHODS OF FORMING
- Publication number 20230178628
- Publication date Jun 8, 2023
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SCALED LINER LAYER FOR ISOLATION STRUCTURE
- Publication number 20230178419
- Publication date Jun 8, 2023
- Applied Materials, Inc.
- Benjamin COLOMBEAU
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND TRANSISTOR ARCHITECTURE WITH FILL-IN DIELECTRIC MAT...
- Publication number 20230170400
- Publication date Jun 1, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SOURCE DRAIN FORMATION IN GATE ALL AROUND TRANSISTOR
- Publication number 20230067331
- Publication date Mar 2, 2023
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TEMPLATE FOR NANOSHEET SOURCE DRAIN FORMATION WITH BOTTOM DIELECTRIC
- Publication number 20230040606
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS
- Publication number 20230039074
- Publication date Feb 9, 2023
- Applied Materials, Inc.
- Michael Stolfi
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HORIZONTAL GAA NANO-WIRE AND NANO-SLAB TRANSISTORS
- Publication number 20230014586
- Publication date Jan 19, 2023
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Gate All Around I/O Engineering
- Publication number 20220399457
- Publication date Dec 15, 2022
- Applied Materials, Inc.
- Steven C.H. Hung
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VOID-FREE CONTACT TRENCH FILL IN GATE-ALL-AROUND FET ARCHTECTURE
- Publication number 20220384258
- Publication date Dec 1, 2022
- Applied Materials, Inc.
- Nicolas Louis BREIL
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Doping Techniques
- Publication number 20220375753
- Publication date Nov 24, 2022
- Applied Materials, Inc.
- Wolfgang Aderhold
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH
- Publication number 20220320318
- Publication date Oct 6, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR
- Publication number 20220246742
- Publication date Aug 4, 2022
- Applied Materials, Inc.
- Ashish Pal
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
THRESHOLD VOLTAGE MODULATION FOR GATE-ALL-AROUND FET ARCHITECTURE
- Publication number 20220238680
- Publication date Jul 28, 2022
- Applied Materials, Inc.
- Steven C. H. HUNG
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated CMOS Source Drain Formation With Advanced Control
- Publication number 20220199804
- Publication date Jun 23, 2022
- Applied Materials, Inc.
- Benjamin Colombeau
- H01 - BASIC ELECTRIC ELEMENTS

Benjamin Colombeau

Person

Patents Grantslast 30 patents

Threshold voltage modulation for gate-all-around FET architecture

Selective silicon etch for gate all around transistors

Methods for GAA I/O formation by selective epi regrowth

Gate all around I/O engineering

Stress incorporation in semiconductor devices

Selective silicon etch for gate all around transistors

Horizontal GAA nano-wire and nano-slab transistors

Gate interface engineering with doped layer

Gate all around I/O engineering

Doping techniques

Methods for GAA I/O formation by selective epi regrowth

Methods and apparatus for integrated selective monolayer doping

Integrated CMOS source drain formation with advanced control

Cap oxidation for FinFET formation

Diffusion barrier layer

Horizontal gate all around and FinFET device isolation

Gate all-around device

Integrated semiconductor processing

Gate all-around device

Horizontal gate all around device isolation

Horizontal gate all around and FinFET device isolation

Forming non-line-of-sight source drain extension in an NMOS FINFET...

Method for fabricating asymmetrical three dimensional device

Imaging of crystalline defects

Horizontal gate all around and FinFET device isolation

Forming non-line-of-sight source drain extension in an nMOS finFET...

Method for fabricating three dimensional device

Techniques for increased dopant activation in compound semiconductors

Horizontal gate all around device isolation

Method for improving fin isolation

Patents Applicationslast 30 patents

METHODS OF REDUCING BACKSIDE CONTACT RESISTANCE

SELECTIVE OXIDATION PROCESSES FOR GATE-ALL-AROUND TRANSISTORS

VOID-FREE STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

ENHANCED MOBILITY IN SEMICONDUCTOR DEVICES

INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE

INNER SPACER LINER FOR GATE-ALL-AROUND DEVICE

MULTILAYER INNER SPACER FOR GATE-ALL-AROUND DEVICE

CHANNEL UNIFORMITY HORIZONTAL GATE ALL AROUND DEVICE

CARBON REPLENISHMENT OF SILICON-CONTAINING MATERIAL

PROCESSING METHODS AND CLUSTER TOOLS FOR FORMING SEMICONDUCTOR DEVICES

INTEGRATING STRAIN SiGe CHANNEL PMOS FOR GAA CMOS TECHNOLOGY

CONTACT FORMATION PROCESS FOR CMOS DEVICES

STRESS INCORPORATION IN SEMICONDUCTOR DEVICES

GATE ALL AROUND BACKSIDE POWER RAIL WITH DIFFUSION BREAK

GATE ALL AROUND BACKSIDE POWER RAIL FORMATION WITH MULTI-COLOR BACK...

GATE-ALL-AROUND TRANSISTORS AND METHODS OF FORMING

SCALED LINER LAYER FOR ISOLATION STRUCTURE

GATE ALL AROUND TRANSISTOR ARCHITECTURE WITH FILL-IN DIELECTRIC MAT...

SOURCE DRAIN FORMATION IN GATE ALL AROUND TRANSISTOR

TEMPLATE FOR NANOSHEET SOURCE DRAIN FORMATION WITH BOTTOM DIELECTRIC

SELECTIVE SILICON ETCH FOR GATE ALL AROUND TRANSISTORS

HORIZONTAL GAA NANO-WIRE AND NANO-SLAB TRANSISTORS

Gate All Around I/O Engineering

VOID-FREE CONTACT TRENCH FILL IN GATE-ALL-AROUND FET ARCHTECTURE

Doping Techniques

METHODS FOR GAA I/O FORMATION BY SELECTIVE EPI REGROWTH

GATE ALL AROUND DEVICE WITH FULLY-DEPLETED SILICON-ON-INSULATOR

THRESHOLD VOLTAGE MODULATION FOR GATE-ALL-AROUND FET ARCHITECTURE

Integrated CMOS Source Drain Formation With Advanced Control