Benjamin P. McKee

Person

Richardson, TX, US

People

Patents Grantslast 30 patents

Information Patent Grant
Integration scheme for changing crystal orientation in hybrid orien...
- Patent number 9,123,570
- Issue date Sep 1, 2015
- Texas Instruments Incorporated
- Angelo Pinto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for changing crystal orientation in hybrid orien...
- Patent number 8,558,318
- Issue date Oct 15, 2013
- Texas Instruments Incorporated
- Angelo Pinto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration scheme for changing crystal orientation in hybrid orien...
- Patent number 7,892,908
- Issue date Feb 22, 2011
- Texas Instruments Incorporated
- Angelo Pinto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for transistor formation using selective gate implantation
- Patent number 7,572,693
- Issue date Aug 11, 2009
- Texas Instruments Incorporated
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit containing polysilicon gate transistors and full...
- Patent number 7,229,871
- Issue date Jun 12, 2007
- Texas Instruments Incorporated
- Shaofeng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integrated circuit containing polysilicon gate transistors and full...
- Patent number 7,148,097
- Issue date Dec 12, 2006
- Texas Instruments Incorporated
- Shaofeng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for transistors formation using selective gate implantation
- Patent number 7,098,098
- Issue date Aug 29, 2006
- Texas Instruments Incorporated
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High capacitive density stacked decoupling capacitor structure
- Patent number 6,969,880
- Issue date Nov 29, 2005
- Texas Instruments Incorporated
- Edmund Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for transistor gate formation using gate sidewall implantation
- Patent number 6,682,994
- Issue date Jan 27, 2004
- Texas Instruments Incorporated
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
POLYCRYSTALLINE SILICON EFUSE AND RESISTOR FABRICATION IN A METAL R...
- Publication number 20140011333
- Publication date Jan 9, 2014
- TEXAS INSTRUMENTS INCORPORATED
- Benjamin P. McKee
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME FOR CHANGING CRYSTAL ORIENTATION IN HYBRID ORIEN...
- Publication number 20130292780
- Publication date Nov 7, 2013
- Angelo PINTO
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME FOR CHANGING CRYSTAL ORIENTATION IN HYBRID ORIEN...
- Publication number 20110108893
- Publication date May 12, 2011
- TEXAS INSTRUMENTS INCORPORATED
- Angelo Pinto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATION SCHEME FOR CHANGING CRYSTAL ORIENTATION IN HYBRID ORIEN...
- Publication number 20090159933
- Publication date Jun 25, 2009
- TEXAS INSTRUMENTS INCORPORATED
- Angelo Pinto
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CONTAINING POLYSILICON GATE TRANSISTORS AND FULL...
- Publication number 20070052034
- Publication date Mar 8, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Shaofeng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
INTEGRATED CIRCUIT CONTAINING POLYSILICON GATE TRANSISTORS AND FULL...
- Publication number 20070042535
- Publication date Feb 22, 2007
- TEXAS INSTRUMENTS INCORPORATED
- Shaofeng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Transistor Formation Using Selective Gate Implantation
- Publication number 20060270139
- Publication date Nov 30, 2006
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for Transistor Formation Using Selective Gate Implantation
- Publication number 20060270140
- Publication date Nov 30, 2006
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integrated circuit containing polysilicon gate transistors and full...
- Publication number 20060199324
- Publication date Sep 7, 2006
- Shaofeng Yu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High capacitive density stacked decoupling capacitor structure
- Publication number 20050064673
- Publication date Mar 24, 2005
- TEXAS INSTRUMENTS INCORPORATED
- Edmund Burke
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for transistors formation using selective gate implantation
- Publication number 20030194849
- Publication date Oct 16, 2003
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods for transistor gate formation using gate sidewall implantation
- Publication number 20030194851
- Publication date Oct 16, 2003
- F. Scott Johnson
- H01 - BASIC ELECTRIC ELEMENTS

Benjamin P. McKee

Person

Patents Grantslast 30 patents

Integration scheme for changing crystal orientation in hybrid orien...

Integration scheme for changing crystal orientation in hybrid orien...

Integration scheme for changing crystal orientation in hybrid orien...

Methods for transistor formation using selective gate implantation

Integrated circuit containing polysilicon gate transistors and full...

Integrated circuit containing polysilicon gate transistors and full...

Methods for transistors formation using selective gate implantation

High capacitive density stacked decoupling capacitor structure

Methods for transistor gate formation using gate sidewall implantation

Patents Applicationslast 30 patents

POLYCRYSTALLINE SILICON EFUSE AND RESISTOR FABRICATION IN A METAL R...

INTEGRATION SCHEME FOR CHANGING CRYSTAL ORIENTATION IN HYBRID ORIEN...

INTEGRATION SCHEME FOR CHANGING CRYSTAL ORIENTATION IN HYBRID ORIEN...

INTEGRATION SCHEME FOR CHANGING CRYSTAL ORIENTATION IN HYBRID ORIEN...

INTEGRATED CIRCUIT CONTAINING POLYSILICON GATE TRANSISTORS AND FULL...

INTEGRATED CIRCUIT CONTAINING POLYSILICON GATE TRANSISTORS AND FULL...

Methods for Transistor Formation Using Selective Gate Implantation

Methods for Transistor Formation Using Selective Gate Implantation

Integrated circuit containing polysilicon gate transistors and full...

High capacitive density stacked decoupling capacitor structure

Methods for transistors formation using selective gate implantation

Methods for transistor gate formation using gate sidewall implantation