Bernard Steele Meyerson

Person

Yorktown Heights, NY, US

People

Patents Grantslast 30 patents

Information Patent Grant
Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY al...
- Patent number 7,652,288
- Issue date Jan 26, 2010
- International Business Machines Corporation
- Jack O. Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
System and computer program product for dynamically managing power...
- Patent number 7,647,519
- Issue date Jan 12, 2010
- International Business Machines Corporation
- Thomas J. Heller, Jr.
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Patent number 7,405,422
- Issue date Jul 29, 2008
- International Business Machines Corporation
- Jack O. Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method for dynamically managing power in microprocessor chips accor...
- Patent number 7,401,240
- Issue date Jul 15, 2008
- International Business Machines Corporation
- Thomas J. Heller, Jr.
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Patent number 7,183,576
- Issue date Feb 27, 2007
- International Business Machines Corporation
- Jack Oon Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Patent number 6,908,866
- Issue date Jun 21, 2005
- International Business Machines Corporation
- Jack Oon Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Patent number 6,750,119
- Issue date Jun 15, 2004
- International Business Machines Corporation
- Jack Oon Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Method of making graded channel effect transistor
- Patent number 6,004,137
- Issue date Dec 21, 1999
- International Business Machines Corporation
- Emmanuel Crabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for low temperature, low pressure chemical vap...
- Patent number 5,906,680
- Issue date May 25, 1999
- International Business Machines Corporation
- Bernard Steele Meyerson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Graded channel field effect transistor
- Patent number 5,821,577
- Issue date Oct 13, 1998
- International Business Machines Corporation
- Emmanuel Crabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density/arbitrary lattice constant heteroepitaxial layers
- Patent number 5,810,924
- Issue date Sep 22, 1998
- International Business Machines Corporation
- Francoise Kolmer Legoues
- G02 - OPTICS
Information Patent Grant
Single-transistor logic and CMOS inverters
- Patent number 5,808,344
- Issue date Sep 15, 1998
- International Business Machines Corporation
- Khalid EzzEldin Ismail
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Graded channel field effect transistor
- Patent number 5,777,364
- Issue date Jul 7, 1998
- International Business Machines Corporation
- Emmanuel Crabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Si/SiGe vertical junction field effect transistor
- Patent number 5,714,777
- Issue date Feb 3, 1998
- International Business Machines Corporation
- Khalid EzzEldin Ismail
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Low defect density/arbitrary lattice constant heteroepitaxial layers
- Patent number 5,659,187
- Issue date Aug 19, 1997
- International Business Machines Corporation
- Francoise Kolmer Legoues
- G02 - OPTICS
Information Patent Grant
Method and apparatus for low temperature, low pressure chemical vap...
- Patent number 5,607,511
- Issue date Mar 4, 1997
- International Business Machines Corporation
- Bernard S. Meyerson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Fabrication of defect free silicon on an insulating substrate
- Patent number 5,540,785
- Issue date Jul 30, 1996
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of fabricating defect-free silicon on an insulating substrate
- Patent number 5,462,883
- Issue date Oct 31, 1995
- International Business Machines Corporation
- Robert H. Dennard
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
SiGe thin film or SOI MOSFET and method for making the same
- Patent number 5,461,250
- Issue date Oct 24, 1995
- International Business Machines Corporation
- Joachim N. Burghartz
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of Manufacturing three dimensional integrated device and cir...
- Patent number 5,409,852
- Issue date Apr 25, 1995
- International Business Machines Corporation
- Thomas B. Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Epitaxial silicon membranes
- Patent number 5,357,899
- Issue date Oct 25, 1994
- International Business Machines Corporation
- Ernest Bassous
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
Graded bandgap single-crystal emitter heterojunction bipolar transi...
- Patent number 5,352,912
- Issue date Oct 4, 1994
- International Business Machines Corporation
- Emmanuel F. Crabbe
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Three dimensional integrated device and circuit structures
- Patent number 5,319,240
- Issue date Jun 7, 1994
- International Business Machines Corporation
- Thomas B. Faure
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of dopant enhancement in an epitaxial silicon layer by using...
- Patent number 5,316,958
- Issue date May 31, 1994
- International Business Machines Corporation
- Bernard S. Meyerson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method and apparatus for low temperature, low pressure chemical vap...
- Patent number 5,298,452
- Issue date Mar 29, 1994
- International Business Machines Corporation
- Bernard S. Meyerson
- C30 - CRYSTAL GROWTH
Information Patent Grant
Epitaxial silicon membranes
- Patent number 5,273,829
- Issue date Dec 28, 1993
- International Business Machines Corporation
- Ernest Bassous
- G03 - PHOTOGRAPHY CINEMATOGRAPHY ELECTROGRAPHY HOLOGRAPHY
Information Patent Grant
CVD diamond or diamond-like carbon for chemical-mechanical polish e...
- Patent number 5,246,884
- Issue date Sep 21, 1993
- International Business Machines Corporation
- Mark A. Jaso
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Erosion/corrosion resistant diaphragm
- Patent number 5,241,131
- Issue date Aug 31, 1993
- International Business Machines Corporation
- Nanik Bakhru
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Single ended ultra-high vacuum chemical vapor deposition (UHV/CVD)...
- Patent number 5,181,964
- Issue date Jan 26, 1993
- International Business Machines Corporation
- Bernard S. Meyerson
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...
Information Patent Grant
Three-dimensional semiconductor structures formed from planar layers
- Patent number 5,160,987
- Issue date Nov 3, 1992
- International Business Machines Corporation
- Wilber D. Pricer
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
EPITAXIAL AND POLYCRYSTALLINE GROWTH OF SI1-X-YGEXCY AND SI1-YCY AL...
- Publication number 20090026459
- Publication date Jan 29, 2009
- International Business Machines Corporation
- Jack Oon Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
System and Computer Program Product for Dynamically Managing Power...
- Publication number 20080229128
- Publication date Sep 18, 2008
- International Business Machines Corporation
- Thomas J. Heller
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
EPITAXIAL AND POLYCRYSTALLINE GROWTH OF SI1-X-YGEXCY AND SI1-YCY AL...
- Publication number 20070122989
- Publication date May 31, 2007
- International Business Macines Corporation
- Jack Oon Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Ultrathin buried insulators in Si or Si-containing material
- Publication number 20060105559
- Publication date May 18, 2006
- International Business Machines Corporation
- Tze-Chiang Chen
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method, system, and computer program product for dynamically managi...
- Publication number 20050283679
- Publication date Dec 22, 2005
- International Business Machines Corporation
- Thomas J. Heller
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Publication number 20040161911
- Publication date Aug 19, 2004
- International Business Machines Corporation
- Jack Oon Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Publication number 20040161875
- Publication date Aug 19, 2004
- International Business Machines Corporation
- Jack Oon Chu
- C30 - CRYSTAL GROWTH
Information Patent Application
Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...
- Publication number 20020182423
- Publication date Dec 5, 2002
- International Business Machines Corporation
- Jack Oon Chu
- C23 - COATING METALLIC MATERIAL COATING MATERIAL WITH METALLIC MATERIAL CHEMI...

Bernard Steele Meyerson

Person

Patents Grantslast 30 patents

Epitaxial and polycrystalline growth of Si1-X-YGEXCY and Si1-YCY al...

System and computer program product for dynamically managing power...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Method for dynamically managing power in microprocessor chips accor...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Method of making graded channel effect transistor

Method and apparatus for low temperature, low pressure chemical vap...

Graded channel field effect transistor

Low defect density/arbitrary lattice constant heteroepitaxial layers

Single-transistor logic and CMOS inverters

Graded channel field effect transistor

Si/SiGe vertical junction field effect transistor

Low defect density/arbitrary lattice constant heteroepitaxial layers

Method and apparatus for low temperature, low pressure chemical vap...

Fabrication of defect free silicon on an insulating substrate

Method of fabricating defect-free silicon on an insulating substrate

SiGe thin film or SOI MOSFET and method for making the same

Method of Manufacturing three dimensional integrated device and cir...

Epitaxial silicon membranes

Graded bandgap single-crystal emitter heterojunction bipolar transi...

Three dimensional integrated device and circuit structures

Method of dopant enhancement in an epitaxial silicon layer by using...

Method and apparatus for low temperature, low pressure chemical vap...

Epitaxial silicon membranes

CVD diamond or diamond-like carbon for chemical-mechanical polish e...

Erosion/corrosion resistant diaphragm

Single ended ultra-high vacuum chemical vapor deposition (UHV/CVD)...

Three-dimensional semiconductor structures formed from planar layers

Patents Applicationslast 30 patents

EPITAXIAL AND POLYCRYSTALLINE GROWTH OF SI1-X-YGEXCY AND SI1-YCY AL...

System and Computer Program Product for Dynamically Managing Power...

EPITAXIAL AND POLYCRYSTALLINE GROWTH OF SI1-X-YGEXCY AND SI1-YCY AL...

Ultrathin buried insulators in Si or Si-containing material

Method, system, and computer program product for dynamically managi...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...

Epitaxial and polycrystalline growth of Si1-x-yGexCy and Si1-yCy al...