Claims
- 1. A method of producing an epitaxial silicon membrane, said method comprising the steps of:
- growing one or more films of silicon epitaxially using chemical vapor deposition at a temperature in a range of about 500.degree. to about 850.degree. C. on a substrate surface; and
- doping at least one of said silicon films during said growing with a dopant selected from the group consisting of: boron in a concentration range greater than 2.times.10.sup.20 atoms of boron/cm.sup.3 of silicon; germanium in a concentration range greater than 5.times.10.sup.20 atoms of germanium/cm.sup.3 of silicon; and boron and germanium, said boron in a concentration range greater than 2.times.10.sup.20 atoms of boron/cm.sup.3 of silicon and said germanium in a concentration range greater than 5.times.10.sup.20 atoms of germanium/cm.sup.3 of silicon.
- 2. The method of claim 1 wherein said substrate has two surfaces and said growing step comprises growing said films of silicon on both of said surfaces simultaneously.
- 3. The method of claim 1 wherein said substrate comprises silicon.
- 4. A method of selectively etching an epitaxial silicon membrane, said method comprising the steps of:
- doping portions of said silicon membrane with a dopant selected from the group consisting of: boron in a concentration range greater than 2.times.10.sup.20 atoms of boron/cm.sup.3 of silicon; germanium in a concentration range greater than 5.times.10.sup.20 atoms of germanium/cm.sup.3 of silicon; and boron and germanium, said boron in a concentration range greater than 2.times.10.sup.20 atoms of boron/cm.sup.3 of silicon and said germanium in a concentration range greater than 5.times.10.sup.20 atoms of germanium/cm.sup.3 of silicon, other portions of said silicon membrane not being so doped; and
- etching the resulting silicon membrane with a strongly alkaline anisotropic chemical etching solution so as to selectively remove said other portions of said silicon membrane.
- 5. The method of claim 4 wherein said strongly alkaline anisotropic chemical etching solution comprises potassium hydroxide.
Parent Case Info
This application is a division of application Ser. No. 07/774,010, filed Oct. 8, 1991, now allowed, U.S. Pat. No. 5,273,829.
US Referenced Citations (2)
Number |
Name |
Date |
Kind |
5259918 |
Akbar et al. |
Nov 1993 |
|
5286334 |
Akbar et al. |
Feb 1994 |
|
Divisions (1)
|
Number |
Date |
Country |
Parent |
774010 |
Oct 1991 |
|