Bernhard H. Grote

Person

Phoenix, AZ, US

People

Patents Grantslast 30 patents

Information Patent Grant
Semiconductor device with an insulating region formed between a con...
- Patent number 12,191,383
- Issue date Jan 7, 2025
- NXP USA, INC.
- Bruce Mcrae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistors with source-connected field plates
- Patent number 12,148,820
- Issue date Nov 19, 2024
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with extrinsic base region and method of fabri...
- Patent number 12,107,143
- Issue date Oct 1, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices with termination regions
- Patent number 12,057,499
- Issue date Aug 6, 2024
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with conductive elements formed over dielectri...
- Patent number 11,923,424
- Issue date Mar 5, 2024
- NXP B.V.
- Ibrahim Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,777,002
- Issue date Oct 3, 2023
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench field plate power MOSFET
- Patent number 11,631,763
- Issue date Apr 18, 2023
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor formed with spacer
- Patent number 11,387,348
- Issue date Jul 12, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination for trench field plate power MOSFET
- Patent number 11,329,150
- Issue date May 10, 2022
- NXP USA, INC.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with extended drain region
- Patent number 11,329,156
- Issue date May 10, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with extended drain region
- Patent number 11,282,956
- Issue date Mar 22, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally-diffused metal-oxide semiconductor transistor and method...
- Patent number 11,227,921
- Issue date Jan 18, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Trench with different transverse cross-sectional widths
- Patent number 11,217,675
- Issue date Jan 4, 2022
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor trench with field plate structure
- Patent number 11,075,110
- Issue date Jul 27, 2021
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device with a base link region and method therefor
- Patent number 11,018,247
- Issue date May 25, 2021
- NXP USA, INC.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor devices with extended drain regions located in trench si...
- Patent number 10,833,174
- Issue date Nov 10, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor with gate/field plate structure
- Patent number 10,749,028
- Issue date Aug 18, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Vertical transistor with extended drain region
- Patent number 10,749,023
- Issue date Aug 18, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Die with buried doped isolation region
- Patent number 10,607,880
- Issue date Mar 31, 2020
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,600,911
- Issue date Mar 24, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Transistor trench structure with field plate structures
- Patent number 10,600,879
- Issue date Mar 24, 2020
- NXP USA, INC.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structure for improved noise signal isolation
- Patent number 10,580,856
- Issue date Mar 3, 2020
- NXP USA, INC.
- Radu Mircea Secareanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,522,677
- Issue date Dec 31, 2019
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Termination design for trench superjunction power MOSFET
- Patent number 10,431,678
- Issue date Oct 1, 2019
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Field-effect transistor and method therefor
- Patent number 10,424,646
- Issue date Sep 24, 2019
- NXP USA, INC.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Laterally diffused metal oxide semiconducting devices with lightly-...
- Patent number 10,418,483
- Issue date Sep 17, 2019
- NXP B.V.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Radio frequency coupling and transition structure
- Patent number 10,225,925
- Issue date Mar 5, 2019
- NXP USA, INC.
- Li Qiang
- H05 - ELECTRIC TECHNIQUES NOT OTHERWISE PROVIDED FOR
Information Patent Grant
Termination design for trench superjunction power MOSFET
- Patent number 10,103,257
- Issue date Oct 16, 2018
- NXP USA, INC.
- Ganming Qin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of producing bipolar transistors having emitter-base juncti...
- Patent number 9,281,375
- Issue date Mar 8, 2016
- Freescale Semiconductor Inc.
- Xin Lin
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Manufacturing methods for laterally diffused metal oxide semiconduc...
- Patent number 9,209,277
- Issue date Dec 8, 2015
- Freescale Semiconductor Inc.
- Tahir A. Khan
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...
- Publication number 20240395872
- Publication date Nov 28, 2024
- NXP USA, Inc.
- Jie Hu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRI...
- Publication number 20240250130
- Publication date Jul 25, 2024
- NXP B.V.
- Ibrahim Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...
- Publication number 20240222443
- Publication date Jul 4, 2024
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A RECESSED FIELD PLATE AND METHOD OF FABR...
- Publication number 20240222442
- Publication date Jul 4, 2024
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR HEAT DISSIPATION STRUCTURE
- Publication number 20240055314
- Publication date Feb 15, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...
- Publication number 20240030308
- Publication date Jan 25, 2024
- NXP B.V.
- Ljubo Radic
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH AN INSULATING REGION FORMED BETWEEN A CON...
- Publication number 20230207676
- Publication date Jun 29, 2023
- NXP USA, Inc.
- Bruce McRae Green
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE HAVING MULTIPLE REGIONS...
- Publication number 20230207675
- Publication date Jun 29, 2023
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SELF-ALIGNED SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197795
- Publication date Jun 22, 2023
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197839
- Publication date Jun 22, 2023
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197797
- Publication date Jun 22, 2023
- NXP B.V.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES
- Publication number 20230197829
- Publication date Jun 22, 2023
- NXP USA, Inc.
- Congyong Zhu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CURRENT-CARRYING ELECTRODES AND A CONDUCT...
- Publication number 20230124686
- Publication date Apr 20, 2023
- NXP USA, Inc.
- Philippe Renaud
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC...
- Publication number 20220376060
- Publication date Nov 24, 2022
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET
- Publication number 20220231161
- Publication date Jul 21, 2022
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRI...
- Publication number 20220208975
- Publication date Jun 30, 2022
- NXP B.V.
- Ibrahim Khalil
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...
- Publication number 20220093752
- Publication date Mar 24, 2022
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET
- Publication number 20210320200
- Publication date Oct 14, 2021
- NXP USA, Inc.
- Tanuj Saxena
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRENCH WITH DIFFERENT TRANSVERSE CROSS-SECTIONAL WIDTHS
- Publication number 20210305385
- Publication date Sep 30, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR WITH EXTENDED DRAIN REGION
- Publication number 20210184034
- Publication date Jun 17, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR FORMED WITH SPACER
- Publication number 20210159323
- Publication date May 27, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...
- Publication number 20210159319
- Publication date May 27, 2021
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH TERMINATION REGIONS
- Publication number 20210126125
- Publication date Apr 29, 2021
- NXP USA, Inc.
- Bernhard Grote
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSITOR WITH GATE/FIELD PLATE STRUCTURE
- Publication number 20200176599
- Publication date Jun 4, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH EXTENDED DRAIN REGIONS LOCATED IN TRENCH SI...
- Publication number 20200135896
- Publication date Apr 30, 2020
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VERTICAL TRANSISTOR WITH EXTENDED DRAIN REGION
- Publication number 20200135916
- Publication date Apr 30, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR DEVICES WITH CONTROL-TERMINAL FIELD PLATE STRUCTURES IN...
- Publication number 20200098912
- Publication date Mar 26, 2020
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DIE WITH BURIED DOPED ISOLATION REGION
- Publication number 20200075393
- Publication date Mar 5, 2020
- NXP USA, Inc.
- Saumitra Raj Mehrotra
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
STRUCTURE FOR IMPROVED NOISE SIGNAL ISOLATION
- Publication number 20190386098
- Publication date Dec 19, 2019
- NXP USA, Inc.
- Radu Mircea Secareanu
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
TRANSISTOR TRENCH STRUCTURE WITH FIELD PLATE STRUCTURES
- Publication number 20190280094
- Publication date Sep 12, 2019
- NXP USA, Inc.
- BERNHARD GROTE
- H01 - BASIC ELECTRIC ELEMENTS

Bernhard H. Grote

Person

Patents Grantslast 30 patents

Semiconductor device with an insulating region formed between a con...

Transistors with source-connected field plates

Semiconductor device with extrinsic base region and method of fabri...

Transistor devices with termination regions

Semiconductor device with conductive elements formed over dielectri...

Laterally-diffused metal-oxide semiconductor transistor and method...

Termination for trench field plate power MOSFET

Transistor formed with spacer

Termination for trench field plate power MOSFET

Transistor with extended drain region

Transistor with extended drain region

Laterally-diffused metal-oxide semiconductor transistor and method...

Trench with different transverse cross-sectional widths

Transistor trench with field plate structure

Semiconductor device with a base link region and method therefor

Transistor devices with extended drain regions located in trench si...

Transistor with gate/field plate structure

Vertical transistor with extended drain region

Die with buried doped isolation region

Field-effect transistor and method therefor

Transistor trench structure with field plate structures

Structure for improved noise signal isolation

Field-effect transistor and method therefor

Termination design for trench superjunction power MOSFET

Field-effect transistor and method therefor

Laterally diffused metal oxide semiconducting devices with lightly-...

Radio frequency coupling and transition structure

Termination design for trench superjunction power MOSFET

Methods of producing bipolar transistors having emitter-base juncti...

Manufacturing methods for laterally diffused metal oxide semiconduc...

Patents Applicationslast 30 patents

SEMICONDUCTOR DEVICE WITH FIELD PLATE AND MULTIPLE-PART GATE STRUCT...

SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRI...

SEMICONDUCTOR DEVICE WITH A FIELD PLATE HAVING A RECESSED REGION AN...

SEMICONDUCTOR DEVICE WITH A RECESSED FIELD PLATE AND METHOD OF FABR...

TRANSISTOR HEAT DISSIPATION STRUCTURE

SEMICONDUCTOR DEVICE WITH EXTRINSIC BASE REGION AND METHOD OF FABRI...

SEMICONDUCTOR DEVICE WITH AN INSULATING REGION FORMED BETWEEN A CON...

SEMICONDUCTOR DEVICE WITH A GATE ELECTRODE HAVING MULTIPLE REGIONS...

TRANSISTORS WITH SELF-ALIGNED SOURCE-CONNECTED FIELD PLATES

TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES

TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES

TRANSISTORS WITH SOURCE-CONNECTED FIELD PLATES

SEMICONDUCTOR DEVICE WITH CURRENT-CARRYING ELECTRODES AND A CONDUCT...

SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENT FORMED OVER DIELECTRIC...

TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET

SEMICONDUCTOR DEVICE WITH CONDUCTIVE ELEMENTS FORMED OVER DIELECTRI...

LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...

TERMINATION FOR TRENCH FIELD PLATE POWER MOSFET

TRENCH WITH DIFFERENT TRANSVERSE CROSS-SECTIONAL WIDTHS

TRANSISTOR WITH EXTENDED DRAIN REGION

TRANSISTOR FORMED WITH SPACER

LATERALLY-DIFFUSED METAL-OXIDE SEMICONDUCTOR TRANSISTOR AND METHOD...

TRANSISTOR DEVICES WITH TERMINATION REGIONS

TRANSITOR WITH GATE/FIELD PLATE STRUCTURE

TRANSISTOR DEVICES WITH EXTENDED DRAIN REGIONS LOCATED IN TRENCH SI...

VERTICAL TRANSISTOR WITH EXTENDED DRAIN REGION

TRANSISTOR DEVICES WITH CONTROL-TERMINAL FIELD PLATE STRUCTURES IN...

DIE WITH BURIED DOPED ISOLATION REGION

STRUCTURE FOR IMPROVED NOISE SIGNAL ISOLATION

TRANSISTOR TRENCH STRUCTURE WITH FIELD PLATE STRUCTURES