BethAnn Rainey

Person

South Burlington, VT, US

People

Patents Grantslast 30 patents

Information Patent Grant
Flattened substrate surface for substrate bonding
- Patent number 8,778,737
- Issue date Jul 15, 2014
- International Business Machines Corporation
- Edward C. Cooney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Noble gas implantation region in top silicon layer of semiconductor...
- Patent number 8,748,285
- Issue date Jun 10, 2014
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Integration of multiple gate oxides with shallow trench isolation m...
- Patent number 8,227,318
- Issue date Jul 24, 2012
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Simultaneously formed isolation trench and through-box contact for...
- Patent number 8,021,943
- Issue date Sep 20, 2011
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET transistor and circuit
- Patent number 7,964,466
- Issue date Jun 21, 2011
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Structures including means for lateral current carrying capability...
- Patent number 7,904,868
- Issue date Mar 8, 2011
- International Business Machines Corporation
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Selectable device options for characterizing semiconductor devices
- Patent number 7,814,454
- Issue date Oct 12, 2010
- International Business Machines Corporation
- Anthony I. Chou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Grant
FinFET transistor and circuit
- Patent number 7,777,276
- Issue date Aug 17, 2010
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Semiconductor device having freestanding semiconductor layer
- Patent number 7,709,892
- Issue date May 4, 2010
- International Business Machines Corporation
- Brent A Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual body-contacted trigate
- Patent number 7,700,446
- Issue date Apr 20, 2010
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of making a finFET having suppressed parasitic device charac...
- Patent number 7,470,578
- Issue date Dec 30, 2008
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods for lateral current carrying capability improvement in semi...
- Patent number 7,453,151
- Issue date Nov 18, 2008
- International Business Machines Corporation
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Methods of base formation in a BiCMOS process
- Patent number 7,390,721
- Issue date Jun 24, 2008
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET transistor and circuit
- Patent number 7,368,355
- Issue date May 6, 2008
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Virtual body-contacted trigate
- Patent number 7,288,802
- Issue date Oct 30, 2007
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET transistor and circuit
- Patent number 7,115,920
- Issue date Oct 3, 2006
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of forming freestanding semiconductor layer
- Patent number 7,087,506
- Issue date Aug 8, 2006
- International Business Machines Corporation
- Brent A Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
FinFET having suppressed parasitic device characteristics
- Patent number 6,992,354
- Issue date Jan 31, 2006
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Method of base formation in a BiCMOS process
- Patent number 6,965,133
- Issue date Nov 15, 2005
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density split-gate FinFET
- Patent number 6,953,726
- Issue date Oct 11, 2005
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Multi-height FinFETS
- Patent number 6,909,147
- Issue date Jun 21, 2005
- International Business Machines Corporation
- Ingo Aller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High-density split-gate FinFET
- Patent number 6,888,199
- Issue date May 3, 2005
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
Self-aligned raised extrinsic base bipolar transistor structure and...
- Patent number 6,869,852
- Issue date Mar 22, 2005
- International Business Machines Corporation
- Alvin J. Joseph
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Grant
High mobility crystalline planes in double-gate CMOS technology
- Patent number 6,794,718
- Issue date Sep 21, 2004
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS

Patents Applicationslast 30 patents

Information Patent Application
NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR...
- Publication number 20130134518
- Publication date May 30, 2013
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FLATTENED SUBSTRATE SURFACE FOR SUBSTRATE BONDING
- Publication number 20130105981
- Publication date May 2, 2013
- International Business Machines Corporation
- Edward C. Cooney
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SIMULTANEOUSLY FORMED ISOLATION TRENCH AND THROUGH-BOX CONTACT FOR...
- Publication number 20110124177
- Publication date May 26, 2011
- International Business Machines Corporation
- Alan B. Botula
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Integration of Multiple Gate Oxides with Shallow Trench Isolation M...
- Publication number 20110117714
- Publication date May 19, 2011
- International Business Machines Corporation
- Max Levy
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
finFET TRANSISTOR AND CIRCUIT
- Publication number 20100203689
- Publication date Aug 12, 2010
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DESIGN STRUCTURES INCLUDING MEANS FOR LATERAL CURRENT CARRYING CAPA...
- Publication number 20090106726
- Publication date Apr 23, 2009
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
SELECTABLE DEVICE OPTIONS FOR CHARACTERIZING SEMICONDUCTOR DEVICES
- Publication number 20090007051
- Publication date Jan 1, 2009
- Anthony I. Chou
- G06 - COMPUTING CALCULATING COUNTING
Information Patent Application
LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMICONDUCTOR DE...
- Publication number 20080308940
- Publication date Dec 18, 2008
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS OF BASE FORMATION IN A BiCMOS PROCESS
- Publication number 20080268604
- Publication date Oct 30, 2008
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHODS FOR LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMI...
- Publication number 20080122096
- Publication date May 29, 2008
- Natalie Barbara Feilchenfeld
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET TRANSISTOR AND CIRCUIT
- Publication number 20080099795
- Publication date May 1, 2008
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
VIRTUAL BODY-CONTACTED TRIGATE
- Publication number 20070023756
- Publication date Feb 1, 2007
- International Business Machines Corporation
- Brent A. Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET TRANSISTOR AND CIRCUIT
- Publication number 20060255410
- Publication date Nov 16, 2006
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Method of making a finFET having suppressed parasitic device charac...
- Publication number 20060057802
- Publication date Mar 16, 2006
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
Methods of base formation in a BiCMOS process
- Publication number 20060017066
- Publication date Jan 26, 2006
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
FinFET transistor and circuit
- Publication number 20050224890
- Publication date Oct 13, 2005
- International Business Machines Corporation
- Kerry Bernstein
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF BASE FORMATION IN A BICMOS PROCESS
- Publication number 20050199908
- Publication date Sep 15, 2005
- International Business Machines Corporation
- Peter J. Geiss
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
High-density split-gate FinFET
- Publication number 20050104130
- Publication date May 19, 2005
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
HIGH-DENSITY SPLIT-GATE FINFET
- Publication number 20050073005
- Publication date Apr 7, 2005
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF FORMING FREESTANDING SEMICONDUCTOR LAYER
- Publication number 20050009305
- Publication date Jan 13, 2005
- International Business Machines Corporation
- Brent A Anderson
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
METHOD OF MAKING A finFET HAVING SUPPRESSED PARASITIC DEVICE CHARAC...
- Publication number 20040262688
- Publication date Dec 30, 2004
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
MULTI-HEIGHT FINFETS
- Publication number 20040222477
- Publication date Nov 11, 2004
- International Business Machines Corporation
- Ingo Aller
- H01 - BASIC ELECTRIC ELEMENTS
Information Patent Application
DENSE DUAL-PLANE DEVICES
- Publication number 20040119100
- Publication date Jun 24, 2004
- International Business Machines Corporation
- Edward J. Nowak
- H01 - BASIC ELECTRIC ELEMENTS

BethAnn Rainey

Person

Patents Grantslast 30 patents

Flattened substrate surface for substrate bonding

Noble gas implantation region in top silicon layer of semiconductor...

Integration of multiple gate oxides with shallow trench isolation m...

Simultaneously formed isolation trench and through-box contact for...

FinFET transistor and circuit

Structures including means for lateral current carrying capability...

Selectable device options for characterizing semiconductor devices

FinFET transistor and circuit

Semiconductor device having freestanding semiconductor layer

Virtual body-contacted trigate

Method of making a finFET having suppressed parasitic device charac...

Methods for lateral current carrying capability improvement in semi...

Methods of base formation in a BiCMOS process

FinFET transistor and circuit

Virtual body-contacted trigate

FinFET transistor and circuit

Method of forming freestanding semiconductor layer

FinFET having suppressed parasitic device characteristics

Method of base formation in a BiCMOS process

High-density split-gate FinFET

Multi-height FinFETS

High-density split-gate FinFET

Self-aligned raised extrinsic base bipolar transistor structure and...

High mobility crystalline planes in double-gate CMOS technology

Patents Applicationslast 30 patents

NOBLE GAS IMPLANTATION REGION IN TOP SILICON LAYER OF SEMICONDUCTOR...

FLATTENED SUBSTRATE SURFACE FOR SUBSTRATE BONDING

SIMULTANEOUSLY FORMED ISOLATION TRENCH AND THROUGH-BOX CONTACT FOR...

Integration of Multiple Gate Oxides with Shallow Trench Isolation M...

finFET TRANSISTOR AND CIRCUIT

DESIGN STRUCTURES INCLUDING MEANS FOR LATERAL CURRENT CARRYING CAPA...

SELECTABLE DEVICE OPTIONS FOR CHARACTERIZING SEMICONDUCTOR DEVICES

LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMICONDUCTOR DE...

METHODS OF BASE FORMATION IN A BiCMOS PROCESS

METHODS FOR LATERAL CURRENT CARRYING CAPABILITY IMPROVEMENT IN SEMI...

FinFET TRANSISTOR AND CIRCUIT

VIRTUAL BODY-CONTACTED TRIGATE

FinFET TRANSISTOR AND CIRCUIT

Method of making a finFET having suppressed parasitic device charac...

Methods of base formation in a BiCMOS process

FinFET transistor and circuit

METHOD OF BASE FORMATION IN A BICMOS PROCESS

High-density split-gate FinFET

HIGH-DENSITY SPLIT-GATE FINFET

METHOD OF FORMING FREESTANDING SEMICONDUCTOR LAYER

METHOD OF MAKING A finFET HAVING SUPPRESSED PARASITIC DEVICE CHARAC...

MULTI-HEIGHT FINFETS

DENSE DUAL-PLANE DEVICES